PD -93864
IRF7534D1
FETKY
MOSFET & Schottky Diode
Co-packaged HEXFET
®
power
MOSFET and Schottky diode
q
Ultra Low On-Resistance
MOSFET
q
Trench technology
TM
Footprint
q
Micro8
q
Available in Tape & Reel
Description
q
A
A
S
G
1
8
K
K
D
D
2
7
V
DSS
= -20V
R
DS(on)
= 0.055Ω
Schottky Vf=0.39V
3
6
4
5
T op V ie w
The FETKY family of co-packaged MOSFETs and Schottky diodes offers the designer
an innovative, board space saving solution for switching regulator and power
management applications. International Rectifier utilizes advanced processing
techniques to achieve extremely low on-resistance per silicon area. Combining this
technology with International Rectifier’s low forward drop Schottky rectifiers results in
an extremely efficient device suitable for use in a wide variety of portable electronics
applications, such as cell phones, PDAs, etc.
The Micro8
TM
package makes an ideal device for applications where printed circuit
board space is at a premium. The low profile (<1.1mm) of the Micro8
TM
will allow it to
fit easily into extremely thin application environments such as portable electronics
Micro8™
Absolute Maximum Ratings
Parameter
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
V
GS
dv/dt
T
J
, T
STG
Drain-Source Voltage
Continuous Drain Current, V
GS
@ -4.5V
Continuous Drain Current, V
GS
@ -4.5V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Max.
-20
-4.3
-3.4
-34
1.25
0.8
10
± 12
1.1
-55 to + 150
Units
V
A
W
W
mW/°C
V
V/ns
°C
Thermal Resistance
R
θJA
Max.
Maximum Junction-to-Ambient
Parameter
Units
100
°C/W
Notes:
Repetitive rating – pulse width limited by max. junction temperature (see Fig. 9)
I
SD
≤
-1.2A, di/dt
≤
100A/µs, V
DD
≤
V
(BR)DSS
, T
J
≤
150°C
Pulse width
≤
300µs – duty cycle
≤
2%
When mounted on 1 inch square copper board to approximate typical multi-layer PCB thermal resistance
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1
3/22/00
IRF7534D1
MOSFET Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-20
–––
–––
-0.6
2.5
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
–––
–––
–––
–––
–––
–––
10
2.1
2.5
10
46
60
64
1066
402
125
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= -250µA
0.055
V
GS
= -4.5V, I
D
= -4.3A
Ω
0.105
V
GS
= -2.5V, I
D
= -3.4A
-1.2
V
V
DS
= V
GS
, I
D
= -250µA
–––
S
V
DS
= -10V, I
D
= -0.8A
-1.0
V
DS
= -16V, V
GS
= 0V
µA
-25
V
DS
= -16V, V
GS
= 0V, T
J
= 125°C
-100
V
GS
= -12V
nA
100
V
GS
= 12V
15
I
D
= -3A
3.1
nC V
DS
= -10V
3.7
V
GS
= -5V
–––
V
DD
= -10V
–––
I
D
= -2A
ns
–––
R
G
= 6.0Ω
–––
R
D
= 5Ω,
–––
V
GS
= 0V
–––
pF
V
DS
= -10V
–––
ƒ = 1.0MHz
MOSFET Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current(Body Diode)
Pulsed Source Current (Body Diode)
Body Diode Forward Voltage
Reverse Recovery Time (Body Diode)
Reverse Recovery Charge
Parameter
Max. Average Forward Current
Max. peak one cycle Non-repetitive
Surge current
Min. Typ. Max. Units
Conditions
––– ––– -1.3
A
––– ––– -34
––– ––– -1.2
V
T
J
= 25°C, I
S
= -1.6A, V
GS
= 0V
––– 54
82
ns
T
J
= 25°C, I
F
= -2.5A
––– 41
61
nC di/dt = 100A/µs
Max. Units
1.9
A
1.4
120
11
A
Conditions
50% Duty Cycle. Rectangular Wave, T
A
= 25°C
T
A
= 70°C
See Fig.13
5µs sine or 3µs Rect. pulse
Following any rated
10ms sine or 6ms Rect. pulse load condition &
with V
RRM
applied
Conditions
I
F
= 1.0A, T
J
= 25°C
I
F
= 2.0A, T
J
= 25°C
I
F
= 1.0A, T
J
= 125°C
I
F
= 2.0A, T
J
= 125°C .
V
R
= 20V
T
J
= 25°C
T
J
= 125°C
V
R
= 5Vdc ( 100kHz to 1 MHz) 25°C
Rated V
R
Schottky Diode Maximum Ratings
I
F(av)
I
SM
Schottky Diode Electrical Specifications
V
FM
Parameter
Max. Forward voltage drop
Max. Units
0.50
0.62
V
0.39
0.57
0.02
mA
8
92
pF
3600 V/ µs
I
RM
C
t
dv/dt
Max. Reverse Leakage current
Max. Junction Capacitance
Max. Voltage Rate of Charge
( HEXFET is the reg. TM for International Rectifier Power MOSFET's )
2
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IRF7534D1
Power MOSFET Characteristics
100
VGS
TOP
-7.50V
-5.00V
-4.00V
-3.50V
-3.00V
-2.50V
-2.00V
BOTTOM -1.50V
100
-I
D
, Drain-to-Source Current (A)
-I
D
, Drain-to-Source Current (A)
VGS
-7.50V
-5.00V
-4.00V
-3.50V
-3.00V
-2.50V
-2.00V
BOTTOM -1.50V
TOP
10
10
1
1
-1.50V
-1.50V
0.1
0.1
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
0.1
0.1
20µs PULSE WIDTH
T
J
= 150
°
C
1
10
100
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.0
T
J
= 25
°
C
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= -4.3A
-I
D
, Drain-to-Source Current (A)
1.5
T
J
= 150
°
C
10
1.0
0.5
1
1.0
V DS = -15V
20µs PULSE WIDTH
2.0
3.0
4.0
5.0
0.0
-60 -40 -20
V
GS
= -4.5V
0
20
40
60
80 100 120 140 160
-V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature(
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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IRF7534D1
Power MOSFET Characteristics
1600
15
-V
GS
, Gate-to-Source Voltage (V)
V
GS
=
C
iss
=
C
rss
=
C
oss
=
0V,
f = 1MHz
C
gs
+ C
gd ,
C
ds
SHORTED
C
gd
C
ds
+ C
gd
I
D
=
-4.3A
-4.5A
12
C, Capacitance (pF)
1200
Ciss
V
DS
=-10V
9
800
6
400
Coss
Crss
0
1
10
100
3
0
0
4
8
12
16
20
24
-V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
-I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10us
-I
D
, Drain Current (A)
I
10
10
100us
T
J
= 150
°
C
T
J
= 25
°
C
1
1ms
1
10ms
0.1
0.0
V
GS
= 0 V
0.4
0.8
1.2
1.6
2.0
2.4
0.1
0.1
T
C
= 25 ° C
T
J
= 150 ° C
Single Pulse
1
10
100
-V
SD
,Source-to-Drain Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRF7534D1
Power MOSFET Characteristics
RDS (on) , Drain-to-Source On Resistance (
Ω
)
RDS(on) , Drain-to -Source On Resistance (
Ω
)
0.12
0.10
0.10
VGS = -2.5V
0.08
0.08
0.06
0.06
VGS = -4.5V
ID = -4.3A
0.04
0
5
10
15
20
-I D , Drain Current (A)
0.04
2.0
3.0
4.0
5.0
6.0
-V GS, Gate -to -Source Voltage (V)
Fig 9.
Typical On-Resistance Vs. Drain
Current
Fig 10.
Typical On-Resistance Vs. Gate
Voltage
1000
Thermal Response (Z
thJA
)
100
D = 0.50
0.20
10
0.10
0.05
0.02
0.01
1
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
0.001
0.01
0.1
1
10
100
0.1
0.0001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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