MOSFET N-CH 40V 46A 300A 5DFN
| 参数名称 | 属性值 |
| Brand Name | ON Semiconductor |
| 是否无铅 | 不含铅 |
| 厂商名称 | ON Semiconductor(安森美) |
| 包装说明 | SMALL OUTLINE, R-PDSO-F5 |
| 制造商包装代码 | 488AA |
| Reach Compliance Code | not_compliant |
| Factory Lead Time | 7 weeks |
| 雪崩能效等级（Eas） | 578 mJ |
| 外壳连接 | DRAIN |
| 配置 | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 40 V |
| 最大漏极电流 (Abs) (ID) | 300 A |
| 最大漏极电流 (ID) | 300 A |
| 最大漏源导通电阻 | 0.00092 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| 最大反馈电容 (Crss) | 70 pF |
| JESD-30 代码 | R-PDSO-F5 |
| JESD-609代码 | e3 |
| 湿度敏感等级 | 1 |
| 元件数量 | 1 |
| 端子数量 | 5 |
| 工作模式 | ENHANCEMENT MODE |
| 最高工作温度 | 175 °C |
| 最低工作温度 | -55 °C |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 极性/信道类型 | N-CHANNEL |
| 最大功率耗散 (Abs) | 166 W |
| 最大脉冲漏极电流 (IDM) | 900 A |
| 参考标准 | AEC-Q101 |
| 表面贴装 | YES |
| 端子面层 | Tin (Sn) |
| 端子形式 | FLAT |
| 端子位置 | DUAL |
| 晶体管元件材料 | SILICON |
| NVMFS5C410NWFAFT1G | NVMFS5C410N | NVMFS5C410NT1G | NVMFS5C410NT3G | NVMFS5C410NWFT1G | NVMFS5C410NWFT3G | NVMFS5C410NAFT1G | NVMFS5C410NWFAFT3G | NVMFS5C410NAFT3G | |
|---|---|---|---|---|---|---|---|---|---|
| 描述 | MOSFET N-CH 40V 46A 300A 5DFN | Single NâChannel Power MOSFET | Single NâChannel Power MOSFET | Single NâChannel Power MOSFET | Single NâChannel Power MOSFET | Single NâChannel Power MOSFET | MOSFET N-CH 40V 46A 300A 5DFN | MOSFET N-CH 40V 46A 300A 5DFN | MOSFET N-CH 40V 46A 300A 5DFN |
| Brand Name | ON Semiconductor | - | ON Semiconductor | ON Semiconductor | ON Semiconductor | ON Semiconductor | ON Semiconductor | - | - |
| 是否无铅 | 不含铅 | - | 不含铅 | 不含铅 | 不含铅 | 不含铅 | 不含铅 | - | - |
| 厂商名称 | ON Semiconductor(安森美) | - | ON Semiconductor(安森美) | ON Semiconductor(安森美) | ON Semiconductor(安森美) | ON Semiconductor(安森美) | ON Semiconductor(安森美) | - | - |
| 包装说明 | SMALL OUTLINE, R-PDSO-F5 | - | SMALL OUTLINE, R-PDSO-F5 | SMALL OUTLINE, R-PDSO-F5 | SMALL OUTLINE, R-PDSO-F5 | SMALL OUTLINE, R-PDSO-F5 | SMALL OUTLINE, R-PDSO-F5 | - | - |
| 制造商包装代码 | 488AA | - | 488AA | 488AA | 488AA | 488AA | 488AA | - | - |
| Reach Compliance Code | not_compliant | - | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant | - | - |
| Factory Lead Time | 7 weeks | - | 29 weeks | 29 weeks | 29 weeks | 29 weeks | 5 weeks | - | - |
| 雪崩能效等级（Eas） | 578 mJ | - | 578 mJ | 578 mJ | 578 mJ | 578 mJ | 578 mJ | - | - |
| 外壳连接 | DRAIN | - | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN | - | - |
| 配置 | SINGLE WITH BUILT-IN DIODE | - | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | - | - |
| 最小漏源击穿电压 | 40 V | - | 40 V | 40 V | 40 V | 40 V | 40 V | - | - |
| 最大漏极电流 (Abs) (ID) | 300 A | - | 300 A | 300 A | 300 A | 300 A | 300 A | - | - |
| 最大漏极电流 (ID) | 300 A | - | 300 A | 300 A | 300 A | 300 A | 300 A | - | - |
| 最大漏源导通电阻 | 0.00092 Ω | - | 0.00092 Ω | 0.00092 Ω | 0.00092 Ω | 0.00092 Ω | 0.00092 Ω | - | - |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | - | - |
| 最大反馈电容 (Crss) | 70 pF | - | 70 pF | 70 pF | 70 pF | 70 pF | 70 pF | - | - |
| JESD-30 代码 | R-PDSO-F5 | - | R-PDSO-F5 | R-PDSO-F5 | R-PDSO-F5 | R-PDSO-F5 | R-PDSO-F5 | - | - |
| JESD-609代码 | e3 | - | e3 | e3 | e3 | e3 | e3 | - | - |
| 湿度敏感等级 | 1 | - | 1 | 1 | 1 | 1 | 1 | - | - |
| 元件数量 | 1 | - | 1 | 1 | 1 | 1 | 1 | - | - |
| 端子数量 | 5 | - | 5 | 5 | 5 | 5 | 5 | - | - |
| 工作模式 | ENHANCEMENT MODE | - | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | - | - |
| 最高工作温度 | 175 °C | - | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C | - | - |
| 最低工作温度 | -55 °C | - | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | - | - |
| 封装主体材料 | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | - | - |
| 封装形状 | RECTANGULAR | - | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | - | - |
| 封装形式 | SMALL OUTLINE | - | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | - | - |
| 极性/信道类型 | N-CHANNEL | - | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | - | - |
| 最大功率耗散 (Abs) | 166 W | - | 166 W | 166 W | 166 W | 166 W | 166 W | - | - |
| 最大脉冲漏极电流 (IDM) | 900 A | - | 900 A | 900 A | 900 A | 900 A | 900 A | - | - |
| 参考标准 | AEC-Q101 | - | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | - | - |
| 表面贴装 | YES | - | YES | YES | YES | YES | YES | - | - |
| 端子面层 | Tin (Sn) | - | Tin (Sn) | Tin (Sn) | Tin (Sn) | Tin (Sn) | Tin (Sn) | - | - |
| 端子形式 | FLAT | - | FLAT | FLAT | FLAT | FLAT | FLAT | - | - |
| 端子位置 | DUAL | - | DUAL | DUAL | DUAL | DUAL | DUAL | - | - |
| 晶体管元件材料 | SILICON | - | SILICON | SILICON | SILICON | SILICON | SILICON | - | - |
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