2N6764, 2N6766, 2N6768 and 2N6770
Qualified Levels:
JAN, JANTX, and
JANTXV
Available on
commercial
versions
N-CHANNEL MOSFET
Qualified per MIL-PRF-19500/543
DESCRIPTION
This family of 2N6764, 2N6766, 2N6768 and 2N6770 switching transistors are military
qualified up to the JANTXV level for high-reliability applications. These devices are also
available in a thru hole TO-254AA leaded package. Microsemi also offers numerous other
transistor products to meet higher and lower power ratings with various switching speed
requirements in both through-hole and surface-mount packages.
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
•
•
•
JEDEC registered 2N6764, 2N6766, 2N6768 and 2N6770 number series.
JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/543.
(See
part nomenclature
for all available options.)
RoHS compliant versions available (commercial grade only).
TO-204AE
(TO-3)
Package
Also available in:
TO-254AA package
(leaded)
2N6764T1 & 2N6770T1
APPLICATIONS / BENEFITS
•
•
Low-profile metal can design.
Military and other high-reliability applications.
MAXIMUM RATINGS
@ T
A
= +25 ºC unless otherwise stated
Parameters / Test Conditions
Junction & Storage Temperature Range
Thermal Resistance Junction-to-Case
Total Power Dissipation
@ T
A
= +25 °C
(1)
@ T
C
= +25 °C
Drain-Source Voltage, dc
2N6764
2N6766
2N6768
2N6770
Gate-Source Voltage, dc
(2)
Drain Current, dc @ T
C
= +25 ºC
2N6764
2N6766
2N6768
2N6770
(2)
Drain Current, dc @ T
C
= +100 ºC
2N6764
2N6766
2N6768
2N6770
(3)
Off-State Current (Peak Total Value)
2N6764
2N6766
2N6768
2N6770
Source Current
2N6764
2N6766
2N6768
2N6770
Notes featured on next page.
Symbol
T
J
&
T
stg
R
ӨJC
P
T
Value
-55 to +150
0.83
4
150
100
200
400
500
± 20
38.0
30.0
14.0
12.0
24.0
19.0
9.0
7.75
152
120
56
48
38.0
30.0
14.0
12.0
Unit
°C
o
C/W
W
V
DS
V
GS
I
D1
V
V
A
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
I
D2
A
I
DM
A (pk)
I
S
A
T4-LDS-0101, Rev. 3 (121466)
©2012 Microsemi Corporation
Page 1 of 9
2N6764, 2N6766, 2N6768 and 2N6770
NOTES:
1.
2.
Derate linearly by 1.2 W/ºC for T
C
> +25 ºC.
The following formula derives the maximum theoretical I
D
limit. I
D
is limited by package and internal wires and may also be limited by
pin diameter:
3.
I
DM
= 4 x I
D1
as calculated in note 2.
MECHANICAL and PACKAGING
•
•
•
•
•
CASE: TO-3 metal can.
TERMINALS: Solder dipped (Sn63/Pb37) over nickel plated alloy 52. RoHS compliant matte-tin plating is also available on
commercial grade only.
MARKING: Manufacturer's ID, part number, date code.
WEIGHT: Approximately 12.7 grams.
See
Package Dimensions
on last page.
PART NOMENCLATURE
JAN
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
Blank = Commercial
JEDEC type number
(see
Electrical Characteristics
table)
2N6764
(e3)
RoHS Compliance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
Symbol
di/dt
I
F
R
G
V
DD
V
DS
V
GS
SYMBOLS & DEFINITIONS
Definition
Rate of change of diode current while in reverse-recovery mode, recorded as maximum value.
Forward current
Gate drive impedance
Drain supply voltage
Drain source voltage, dc
Gate source voltage, dc
T4-LDS-0101, Rev. 3 (121466)
©2012 Microsemi Corporation
Page 2 of 9
2N6764, 2N6766, 2N6768 and 2N6770
ELECTRICAL CHARACTERISTICS
@ T
A
= +25 °C, unless otherwise noted
Parameters / Test Conditions
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 1.0 mA
Gate-Source Voltage (Threshold)
V
DS
≥ V
GS
, I
D
= 0.25 mA
V
DS
≥ V
GS
, I
D
= 0.25 mA, T
J
= +125 °C
V
DS
≥ V
GS
, I
D
= 0.25 mA, T
J
= -55 °C
Gate Current
V
GS
= ± 20 V, V
DS
= 0 V
V
GS
= ± 20 V, V
DS
= 0 V, T
J
= +125 °C
Drain Current
V
GS
= 0 V, V
DS
= 80 V
V
GS
= 0 V, V
DS
= 160 V
V
GS
= 0 V, V
DS
= 320 V
V
GS
= 0 V, V
DS
= 400 V
Drain Current
V
GS
= 0 V, V
DS
= 100 V, T
J
= +125 °C
V
GS
= 0 V, V
DS
= 200 V, T
J
= +125 °C
V
GS
= 0 V, V
DS
= 400 V, T
J
= +125 °C
V
GS
= 0 V, V
DS
= 500 V, T
J
= +125 °C
Drain Current
V
GS
= 0 V, V
DS
V
GS
= 0 V, V
DS
V
GS
= 0 V, V
DS
V
GS
= 0 V, V
DS
= 80 V, T
J
= +125 °C
= 160 V, T
J
= +125 °C
= 320 V, T
J
= +125 °C
= 400 V, T
J
= +125 °C
2N6764
2N6766
2N6768
2N6770
Symbol
Min.
Max.
Unit
V
(BR)DSS
100
200
400
500
2.0
1.0
4.0
5.0
±100
±200
V
V
GS(th)1
V
GS(th)2
V
GS(th)3
I
GSS1
I
GSS2
2N6764
2N6766
2N6768
2N6770
2N6764
2N6766
2N6768
2N6770
2N6764
2N6766
2N6768
2N6770
2N6764
2N6766
2N6768
2N6770
2N6764
2N6766
2N6768
2N6770
V
nA
I
DSS1
25
µA
I
DSS2
1.0
mA
I
DSS3
0.25
mA
Static Drain-Source On-State Resistance
V
GS
= 10 V, I
D
= 24.0 A pulsed
V
GS
= 10 V, I
D
= 19.0 A pulsed
V
GS
= 10 V, I
D
= 9.0 A pulsed
V
GS
= 10 V, I
D
= 7.75 A pulsed
Static Drain-Source On-State Resistance
V
GS
= 10 V, I
D
= 38.0 A pulsed
V
GS
= 10 V, I
D
= 30.0 A pulsed
V
GS
= 10 V, I
D
= 14.0 A pulsed
V
GS
= 10 V, I
D
= 12.0 A pulsed
Static Drain-Source On-State Resistance
T
J
= +125 °C
V
GS
= 10 V, I
D
= 24.0 A pulsed
V
GS
= 10 V, I
D
= 19.0 A pulsed
V
GS
= 10 V, I
D
= 9.0 A pulsed
V
GS
= 10 V, I
D
= 7.75 A pulsed
Diode Forward Voltage
V
GS
= 0 V, I
D
= 38.0 A pulsed
V
GS
= 0 V, I
D
= 30.0 A pulsed
V
GS
= 0 V, I
D
= 14.0 A pulsed
V
GS
= 0 V, I
D
= 12.0 A pulsed
r
DS(on)1
0.055
0.085
0.3
0.4
0.065
0.09
0.4
0.5
Ω
r
DS(on)2
Ω
2N6764
2N6766
2N6768
2N6770
2N6764
2N6766
2N6768
2N6770
r
DS(on)3
0.094
0.153
0.66
0.88
1.9
1.9
1.7
1.7
Ω
V
SD
V
T4-LDS-0101, Rev. 3 (121466)
©2012 Microsemi Corporation
Page 3 of 9
2N6764, 2N6766, 2N6768 and 2N6770
ELECTRICAL CHARACTERISTICS
@ T
A
= +25 °C, unless otherwise noted (continued)
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Gate Charge:
On-State Gate Charge
V
GS
= 10 V, I
D
= 38.0 A, V
DS
= 50 V
V
GS
= 10 V, I
D
= 30.0 A, V
DS
= 100 V
V
GS
= 10 V, I
D
= 14.0 A, V
DS
= 200 V
V
GS
= 10 V, I
D
= 12.0 A, V
DS
= 250 V
Gate to Source Charge
V
GS
= 10 V, I
D
= 38.0 A, V
DS
V
GS
= 10 V, I
D
= 30.0 A, V
DS
V
GS
= 10 V, I
D
= 14.0 A, V
DS
V
GS
= 10 V, I
D
= 12.0 A, V
DS
Gate to Drain Charge
V
GS
= 10 V, I
D
= 38.0 A, V
DS
V
GS
= 10 V, I
D
= 30.0 A, V
DS
V
GS
= 10 V, I
D
= 14.0 A, V
DS
V
GS
= 10 V, I
D
= 12.0 A, V
DS
= 50 V
= 100 V
= 200 V
= 250 V
= 50 V
= 100 V
= 200 V
= 250 V
Symbol
Min.
Max.
Unit
2N6764
2N6766
2N6768
2N6770
2N6764
2N6766
2N6768
2N6770
2N6764
2N6766
2N6768
2N6770
Q
g(on)
125
115
110
120
22
22
18
19
65
60
65
70
nC
Q
gs
nC
Q
gd
nC
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Turn-on delay time
I
D
= 38.0 A, V
GS
= 10 V, R
G
= 2.35
Ω,
V
DD
I
D
= 30.0 A, V
GS
= 10 V, R
G
= 2.35
Ω,
V
DD
I
D
= 14.0 A, V
GS
= 10 V, R
G
= 2.35
Ω,
V
DD
I
D
= 12.0 A, V
GS
= 10 V, R
G
= 2.35
Ω,
V
DD
Rise time
I
D
= 38.0 A, V
GS
= 10 V, R
G
= 2.35
Ω,
V
DD
I
D
= 30.0 A, V
GS
= 10 V, R
G
= 2.35
Ω,
V
DD
I
D
= 14.0 A, V
GS
= 10 V, R
G
= 2.35
Ω,
V
DD
I
D
= 12.0 A, V
GS
= 10 V, R
G
= 2.35
Ω,
V
DD
Turn-off delay time
I
D
= 38.0 A, V
GS
= 10 V, R
G
= 2.35
Ω,
V
DD
I
D
= 30.0 A, V
GS
= 10 V, R
G
= 2.35
Ω,
V
DD
I
D
= 14.0 A, V
GS
= 10 V, R
G
= 2.35
Ω,
V
DD
I
D
= 12.0 A, V
GS
= 10 V, R
G
= 2.35
Ω,
V
DD
Fall time
I
D
= 38.0 A, V
GS
= 10 V, R
G
= 2.35
Ω,
V
DD
I
D
= 30.0 A, V
GS
= 10 V, R
G
= 2.35
Ω,
V
DD
I
D
= 14.0 A, V
GS
= 10 V, R
G
= 2.35
Ω,
V
DD
I
D
= 12.0 A, V
GS
= 10 V, R
G
= 2.35
Ω,
V
DD
Diode Reverse Recovery Time
di/dt = 100 A/µs, V
DD
≤ 30 V, I
D
di/dt = 100 A/µs, V
DD
≤ 30 V, I
D
di/dt = 100 A/µs, V
DD
≤ 30 V, I
D
di/dt = 100 A/µs, V
DD
≤ 30 V, I
D
= 38.0
= 30.0
= 14.0
= 12.0
A
A
A
A
Symbol
= 50 V
= 100 V
= 200 V
= 250 V
= 50 V
= 100 V
= 200 V
= 250 V
= 50 V
= 100 V
= 200 V
= 250 V
= 50 V
= 100 V
= 200 V
= 250 V
2N6764
2N6766
2N6768
2N6770
2N6764
2N6766
2N6768
2N6770
2N6764
2N6766
2N6768
2N6770
2N6764
2N6766
2N6768
2N6770
2N6764
2N6766
2N6768
2N6770
Min.
Max.
Unit
t
d(on)
35
ns
t
r
190
ns
t
d(off)
170
ns
t
f
130
ns
t
rr
500
950
1200
1600
ns
T4-LDS-0101, Rev. 3 (121466)
©2012 Microsemi Corporation
Page 4 of 9
2N6764, 2N6766, 2N6768 and 2N6770
GRAPHS
Thermal Response (Z
θJC
)
t
1
, Rectangle Pulse Duration (seconds)
FIGURE 1
Thermal Response Curves
T4-LDS-0101, Rev. 3 (121466)
©2012 Microsemi Corporation
Page 5 of 9
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