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PWD13F60

产品描述POWER DRIVER
产品类别半导体    电源管理   
文件大小718KB,共26页
制造商ST(意法半导体)
官网地址http://www.st.com/
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PWD13F60概述

POWER DRIVER

PWD13F60规格参数

参数名称属性值
输出配置半桥(2)
接口逻辑
负载类型电感
技术功率 MOSFET
导通电阻(典型值)320 毫欧
电流 - 输出/通道8A
电流 - 峰值输出32A
电压 - 电源15V
工作温度-40°C ~ 125°C (TJ)
故障保护UVLO
安装类型表面贴装
封装/外壳10-PowerVFQFN
供应商器件封装10-VFQFPN(10x13)

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PWD13F60
High-density power driver -
high voltage full bridge with integrated gate driver
Datasheet - production data
Applications
Motor drivers for industrial and home
appliances
Factory automation
Fans and pumps
HID, ballasts
Power supply units
DC-DC and DC-AC converters
Description
The PWD13F60 is a high-density power driver
integrating gate drivers and four N-channel power
MOSFETs in dual half bridge configuration.
The integrated power MOSFETs have low R
DS(on)
of 320 mΩ and 600 V drain-source breakdown
voltage, while the embedded gate drivers high
side can be easily supplied by the integrated
bootstrap diode. The high integration of the
device allows to efficiently drive loads in a tiny
space.
The PWD13F60 device accepts a supply voltage
(V
CC
) extending over a wide range and is
protected by means of low-voltage UVLO
detection on the supply voltage.
The input pins extended range allows an easy
interfacing with microcontrollers, DSP units or
Hall effect sensors.
The device is available in a compact VFQFPN
package.
VFQFPN 10 x 13 x 1.0 mm
Features
Power system-in-package integrating gate
drivers and high-voltage power MOSFETs
– Low R
DS(on)
= 320 mΩ
– BV
DSS
= 600 V
Suitable for operating as
– Full bridge
– Dual independent half bridges
Wide driver supply voltage down to 6.5 V
UVLO protection on supply voltage
3.3 V to 15 V compatible inputs with hysteresis
and pull-down
Interlocking function to prevent cross
conduction
Internal bootstrap diode
Outputs in phase with inputs
Very compact and simplified layout
Flexible, easy and fast design
November 2017
This is information on a product in full production.
DocID030865 Rev 2
1/26
www.st.com

PWD13F60相似产品对比

PWD13F60 PWD13F60TR
描述 POWER DRIVER HIGH-DENSITY POWER DRIVERS
输出配置 半桥(2) 半桥(2)
接口 逻辑 逻辑
负载类型 电感 电感
技术 功率 MOSFET 功率 MOSFET
导通电阻(典型值) 320 毫欧 320 毫欧
电流 - 输出/通道 8A 8A
电流 - 峰值输出 32A 32A
电压 - 电源 15V 15V
工作温度 -40°C ~ 125°C (TJ) -40°C ~ 125°C (TJ)
故障保护 UVLO UVLO
安装类型 表面贴装 表面贴装
封装/外壳 10-PowerVFQFN 10-PowerVFQFN
供应商器件封装 10-VFQFPN(10x13) 10-VFQFPN(10x13)

 
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