Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia.
Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use
http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com
(email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
-
© Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via
salesaddresses@nexperia.com).
Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
PEMD12; PUMD12
NPN/PNP resistor-equipped transistors;
R1 = 47 k, R2 = 47 k
Rev. 4 — 21 November 2011
Product data sheet
1. Product profile
1.1 General description
NPN/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted
Device (SMD) plastic packages.
Table 1.
Product overview
Package
NXP
PEMD12
PUMD12
SOT666
SOT363
JEITA
-
SC-88
PNP/PNP
complement
PEMB2
PUMB2
NPN/NPN
complement
PEMH2
PUMH2
Package
configuration
ultra small and flat
lead
very small
Type number
1.2 Features and benefits
100 mA output current capability
Built-in bias resistors
Simplifies circuit design
Reduces component count
Reduces pick and place costs
AEC-Q101 qualified
1.3 Applications
Low current peripheral driver
Control of IC inputs
Replaces general-purpose transistors in digital applications
1.4 Quick reference data
Table 2.
Symbol
V
CEO
I
O
R1
R2/R1
Quick reference data
Parameter
collector-emitter voltage
output current
bias resistor 1 (input)
bias resistor ratio
Conditions
open base
Min
-
-
33
0.8
Typ
-
-
47
1
Max
50
100
61
1.2
Unit
V
mA
k
Per transistor; for the PNP transistor (TR2) with negative polarity
NXP Semiconductors
PEMD12; PUMD12
NPN/PNP resistor-equipped transistors; R1 = 47 k, R2 = 47 k
2. Pinning information
Table 3.
Pin
1
2
3
4
5
6
Pinning
Description
GND (emitter) TR1
input (base) TR1
output (collector) TR2
GND (emitter) TR2
input (base) TR2
output (collector) TR1
1
2
3
001aab555
TR1
R2
R1
R1
R2
TR2
Simplified outline
6
5
4
Graphic symbol
6
5
4
1
2
3
006aaa143
3. Ordering information
Table 4.
Ordering information
Package
Name
PEMD12
PUMD12
-
SC-88
Description
plastic surface-mounted package; 6 leads
plastic surface-mounted package; 6 leads
Version
SOT666
SOT363
Type number
4. Marking
Table 5.
PEMD12
PUMD12
[1]
* = placeholder for manufacturing site code
Marking codes
Marking code
[1]
D2
D*1
Type number
PEMD12_PUMD12
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 4 — 21 November 2011
2 of 16
NXP Semiconductors
PEMD12; PUMD12
NPN/PNP resistor-equipped transistors; R1 = 47 k, R2 = 47 k
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
V
I
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage TR1
positive
negative
input voltage TR2
positive
negative
I
O
I
CM
P
tot
output current
peak collector current
total power dissipation
PEMD12 (SOT666)
PUMD12 (SOT363)
Per device
P
tot
total power dissipation
PEMD12 (SOT666)
PUMD12 (SOT363)
T
j
T
amb
T
stg
[1]
[2]
Conditions
open emitter
open base
open collector
Min
-
-
-
-
-
-
-
-
Max
50
50
10
+40
10
+10
40
100
100
Unit
V
V
V
V
V
V
V
mA
mA
Per transistor; for the PNP transistor (TR2) with negative polarity
single pulse;
t
p
1 ms
T
amb
25
C
[1][2]
[1]
-
-
-
200
200
mW
mW
T
amb
25
C
[1][2]
[1]
-
-
-
65
65
300
300
150
+150
+150
mW
mW
C
C
C
junction temperature
ambient temperature
storage temperature
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Reflow soldering is the only recommended soldering method.
PEMD12_PUMD12
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 4 — 21 November 2011
3 of 16
NXP Semiconductors
PEMD12; PUMD12
NPN/PNP resistor-equipped transistors; R1 = 47 k, R2 = 47 k
400
P
tot
(mW)
300
006aac749
200
100
0
-75
-25
25
75
125
175
T
amb
(°C)
FR4 PCB, standard footprint
Fig 1.
Per device: Power derating curve for SOT363 (SC-88) and SOT666
6. Thermal characteristics
Table 7.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
PEMD12 (SOT666)
PUMD12 (SOT363)
Per device
R
th(j-a)
thermal resistance from
junction to ambient
PEMD12 (SOT666)
PUMD12 (SOT363)
[1]
[2]
Conditions
in free air
[1][2]
[1]
Min
Typ
Max
Unit
Per transistor
-
-
-
-
625
625
K/W
K/W
in free air
[1][2]
[1]
-
-
-
-
417
417
K/W
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Reflow soldering is the only recommended soldering method.
PEMD12_PUMD12
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 4 — 21 November 2011
4 of 16
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
