CM
PA
K-4
BFG310W/XR
NPN 14 GHz wideband transistor
Rev. 2 — 15 September 2011
Product data sheet
1. Product profile
1.1 General description
NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package.
1.2 Features and benefits
High power gain
Low noise figure
High transition frequency
Gold metallization ensures excellent reliability
1.3 Applications
Intended for Radio Frequency (RF) front end applications in the GHz range, such as:
analog and digital cellular telephones
cordless telephones (Cordless Telephone (CT), Personal Communication
Network (PCN), Digital Enhanced Cordless Telecommunications (DECT), etc.)
radar detectors
pagers
Satellite Antenna TeleVision (SATV) tuners
1.4 Quick reference data
Table 1.
V
CBO
V
CEO
I
C
P
tot
h
FE
C
CBS
f
T
Quick reference data
Conditions
open emitter
open base
T
sp
145
C
I
C
= 5 mA; V
CE
= 3 V;
T
j
= 25
C
V
CB
= 5 V; f = 1 MHz;
emitter grounded
I
C
= 5 mA; V
CE
= 3 V;
f = 1 GHz; T
amb
= 25
C
[1]
Symbol Parameter
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
collector-base
capacitance
transition frequency
Min
-
-
-
-
60
-
-
Typ
-
-
-
-
100
0.17
14
Max
15
6
10
60
200
0.3
-
Unit
V
V
mA
mW
pF
GHz
NXP Semiconductors
BFG310W/XR
NPN 14 GHz wideband transistor
Quick reference data
…continued
Conditions
I
C
= 5 mA; V
CE
= 3 V;
f = 1.8 GHz; T
amb
= 25
C
I
C
= 5 mA; V
CE
= 3 V;
f = 1.8 GHz; T
amb
= 25
C;
Z
S
= Z
L
= 50
s
=
opt
; I
C
= 1 mA;
V
CE
= 3 V; f = 2 GHz
Min
-
-
Typ
18
14
Max
-
-
Unit
dB
dB
maximum stable gain
insertion power gain
Table 1.
MSG
s
21
2
Symbol Parameter
NF
noise figure
-
1
-
dB
[1]
T
sp
is the temperature at the soldering point of the collector pin.
2. Pinning information
Table 2.
Pin
1
2
3
4
Pinning
Description
collector
emitter
base
emitter
2, 4
2
1
sym086
Simplified outline
3
4
Symbol
1
3
3. Ordering information
Table 3.
Ordering information
Package
Name
BFG310W/XR
-
Description
plastic surface mounted package; reverse pinning;
4 leads
Version
SOT343R
Type number
4. Marking
Table 4.
Marking codes
Marking code
[1]
A7*
Type number
BFG310W/XR
[1]
* = p: made in Hong Kong.
BFG310W_XR
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 15 September 2011
2 of 13
NXP Semiconductors
BFG310W/XR
NPN 14 GHz wideband transistor
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
[1]
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
Conditions
open emitter
open base
open collector
T
sp
145
C
[1]
Min
-
-
-
-
-
65
-
Max
15
6
2
10
60
+175
175
Unit
V
V
V
mA
mW
C
C
T
sp
is the temperature at the soldering point of the collector pin.
6. Thermal characteristics
Table 6.
R
th(j-sp)
[1]
Thermal characteristics
Conditions
T
sp
145
C
[1]
Symbol Parameter
thermal resistance from junction to solder point
Typ
530
Unit
K/W
T
sp
is the temperature at the soldering point of the collector pin.
7. Characteristics
Table 7.
Characteristics
T
j
= 25
C; unless otherwise specified.
Symbol Parameter
I
CBO
h
FE
C
CBS
C
CES
C
EBS
f
T
MSG
s
21
2
collector-base cut-off current
DC current gain
collector-base capacitance
collector-emitter capacitance
emitter-base capacitance
transition frequency
maximum stable gain
insertion power gain
Conditions
I
E
= 0 A; V
CB
= 6 V
I
C
= 5 mA; V
CE
= 3 V
V
CB
= 5 V; f = 1 MHz; emitter grounded
V
CE
= 5 V; f = 1 MHz; base grounded
V
EB
= 0.5 V; f = 1 MHz; collector grounded
I
C
= 5 mA; V
CE
= 3 V; f = 1 GHz;
T
amb
= 25
C
I
C
= 5 mA; V
CE
= 3 V; f = 1.8 GHz;
T
amb
= 25
C
I
C
= 5 mA; V
CE
= 3 V; T
amb
= 25
C;
Z
S
= Z
L
= 50
f = 1.8 GHz
f = 3 GHz
NF
P
L(1dB)
IP3
noise figure
output power at 1 dB gain
compression
third order intercept point
s
=
opt
; I
C
= 1 mA; V
CE
= 3 V; f = 2 GHz
I
C
= 5 mA; V
CE
= 3 V; f = 1.8 GHz;
T
amb
= 25
C;
Z
S
= Z
L
= 50
I
C
= 5 mA; V
CE
= 3 V; f = 1.8 GHz;
T
amb
= 25
C;
Z
S
= Z
L
= 50
All information provided in this document is subject to legal disclaimers.
Min
-
60
-
-
-
-
-
Typ
-
100
0.17
0.22
0.16
14
18
Max
15
200
0.3
-
-
-
-
Unit
nA
pF
pF
pF
GHz
dB
-
-
-
-
-
14
11
1
1.8
8.5
-
-
-
-
-
dB
dB
dB
dBm
dBm
BFG310W_XR
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 15 September 2011
3 of 13
NXP Semiconductors
BFG310W/XR
NPN 14 GHz wideband transistor
P
tot
(mW)
60
50
70
001aac177
10
I
C
(mA)
8
I
B
= 120
μA
100
μA
80
μA
001aac178
40
30
20
6
60
μA
4
40
μA
20
μA
2
10
0
0
50
100
150
T
sp
(°C)
200
0
0
1
2
3
4
5
V
CE
(V)
6
Fig 1.
Power derating curve
Fig 2.
Collector current as a function of
collector-emitter voltage; typical values
40
001aac180
0.20
C
CBS
(pF)
0.19
001aac179
G
(dB)
30
MSG
0.18
20
0.17
10
0.16
s
21 2
0.15
0
1
2
3
4
V
CB
(V)
5
0
10
10
2
10
3
f (MHz)
10
4
I
C
= 0 mA; f = 1 MHz.
I
C
= 5 mA; V
CE
= 3 V.
Fig 3.
Collector-base capacitance as a function of
collector-base voltage; typical values
Fig 4.
Gain as a function of frequency; typical values
BFG310W_XR
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 15 September 2011
4 of 13
NXP Semiconductors
BFG310W/XR
NPN 14 GHz wideband transistor
90°
+1
135°
+0.5
+2
45°
1.0
0.8
0.6
0.4
0.2
180°
0
0.2
3 GHz
0.5
1
2
5
40 MHz
10
0°
0
+0.2
+5
−0.2
−5
−135°
−0.5
−1
−90°
−2
−45°
1.0
001aac181
V
CE
= 3 V; I
C
= 5 mA; Z
o
= 50
.
Fig 5.
Common emitter input reflection coefficient (s
11
); typical values
90°
135°
45°
180°
20
16
12
8
40 MHz
4
0
3 GHz
0°
−135°
−45°
−90°
001aac182
V
CE
= 3 V; I
C
= 5 mA.
Fig 6.
Common emitter forward transmission coefficient (s
21
); typical values
BFG310W_XR
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 15 September 2011
5 of 13
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