Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
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Nexperia.
Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
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the references to Nexperia, as shown below.
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use
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- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
-
© Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
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Thank you for your cooperation and
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Kind regards,
Team Nexperia
BUK7105-40AIE
N-channel TrenchPLUS standard level FET
Rev. 05 — 9 February 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. The devices include TrenchPLUS current sensing
and diodes for ElectroStatic Discharge (ESD) protection. This product has been designed
and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Electrostatically robust due to
integrated protection diodes
Low conduction losses due to low
on-state resistance
Q101 compliant
Reduced component count due to
integrated current sensor
Suitable for standard level gate drive
sources
1.3 Applications
Electrical Power Assisted Steering
(EPAS)
Variable Valve Timing for engines
1.4 Quick reference data
Table 1.
V
DS
I
D
Quick reference
Conditions
V
GS
= 10 V; T
mb
= 25 °C;
see
Figure 2;
see
Figure 3;
V
GS
= 10 V; I
D
= 50 A;
T
j
= 25 °C; see
Figure 7;
see
Figure 8
T
j
> -55 °C; T
j
< 175 °C;
V
GS
> 10 V
[1]
Min
-
-
Typ
-
-
Max
40
155
Unit
V
A
drain-source voltage T
j
≥
25 °C; T
j
≤
175 °C
drain current
Symbol Parameter
Static characteristics
R
DSon
drain-source
on-state resistance
ratio of drain current
to sense current
-
4.5
5
mΩ
I
D
/I
sense
450
500
550
[1]
Current is limited by power dissipation chip rating.
NXP Semiconductors
BUK7105-40AIE
N-channel TrenchPLUS standard level FET
2. Pinning information
Table 2.
Pin
1
2
3
4
5
mb
Pinning information
Symbol
G
ISENSE
D
KS
S
D
Description
gate
Sense current
drain
Kelvin source
source
mounting base; connected to
drain
1 2
g
Simplified outline
mb
Graphic symbol
d
3
45
MBL368
SOT426
(D2PAK)
Isense
s
Kelvin source
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
BUK7105-40AIE
D2PAK
Plastic single-ended surface-mounted package (D2PAK); 5 leads (one
lead cropped)
Version
SOT426
BUK7105-40AIE_5
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 05 — 9 February 2009
2 of 15
NXP Semiconductors
BUK7105-40AIE
N-channel TrenchPLUS standard level FET
4. Limiting values
Table 4.
Symbol
V
DS
V
DGR
V
GS
I
D
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
T
mb
= 25 °C; V
GS
= 10 V; see
Figure 2;
see
Figure 3
T
mb
= 100 °C; V
GS
= 10 V; see
Figure 2;
I
DM
P
tot
I
GS(CL)
T
stg
T
j
I
S
I
SM
E
DS(AL)S
peak drain current
total power dissipation
gate-source clamping
current
storage temperature
junction temperature
source current
peak source current
T
mb
= 25 °C
t
p
≤
10 µs; pulsed; T
mb
= 25 °C
[1]
[2]
Avalance ruggedness
non-repetitive
I
D
= 75 A; V
sup
≤
40 V; R
GS
= 50
Ω;
V
GS
= 10 V;
drain-source avalanche T
j(init)
= 25 °C; unclamped
energy
electrostatic discharge
voltage
[1]
[2]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
R
GS
= 20 kΩ
[1]
[2]
[2]
T
mb
= 25 °C; t
p
≤
10 µs; pulsed; see
Figure 3
T
mb
= 25 °C; see
Figure 1
continuous
pulsed; t
p
= 5 ms;
δ
= 0.01
Min
-
-
-20
-
-
-
-
-
-
-
-55
-55
-
-
-
-
Max
40
40
20
155
75
75
620
272
10
50
175
175
155
75
620
1.46
Unit
V
V
V
A
A
A
A
W
mA
mA
°C
°C
A
A
A
J
Source-drain diode
Electrostatic discharge
V
esd
HBM; C = 100 pF; R = 1.5 kΩ
-
6
kV
Current is limited by power dissipation chip rating.
Continuous current is limited by package.
BUK7105-40AIE_5
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 05 — 9 February 2009
3 of 15
NXP Semiconductors
BUK7105-40AIE
N-channel TrenchPLUS standard level FET
120
P
der
(%)
80
03na19
160
I
D
(A)
120
03ng16
80
capped at 75A
due to package
40
40
0
0
50
100
150
T
mb
(°C)
200
0
0
50
100
150
T
mb
(°C)
200
Fig 2.
Fig 1.
Normalized total power dissipation as a
function of mounting base temperature
Continuous drain current as a function of
mounting base temperature
103
ID
(A)
03ng17
Limit RDSon = VDS/ID
tp = 10 µs
102
Capped at 75 A due to package
100 µs
1 ms
DC
10
100 ms
10 ms
1
1
10
VDS (V)
102
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK7105-40AIE_5
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 05 — 9 February 2009
4 of 15
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