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HN2S02JE

产品描述high-speed switching applications
产品类别半导体    分立半导体   
文件大小171KB,共3页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
标准  
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HN2S02JE概述

high-speed switching applications

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HN2S02JE
TOSHIBA Diode
Silicon Epitaxial Schottky Barrier Type
HN2S02JE
High-speed Switching Applications
HN2S02JE is composed of two independent diodes.
Low forward voltage: V
F (3)
= 0.54V (typ.)
Low reverse current: I
R
= 5μA (max.)
Unit: mm
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Maximum (peak) reverse Voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10ms)
Power dissipation
Junction temperature
Storage temperature range
Operating temperature range
Symbol
V
RM
V
R
I
FM
I
O
I
FSM
P
T
j
T
stg
T
opr
Rating
45
40
300 *
100 *
1*
100 **
125
−55∼125
−40∼100
Unit
V
V
mA
mA
A
mW
°C
°C
°C
1.ANODE1
2.NC
3.ANODE2
4.CATHODE2
5.CATHODE1
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* : Unit rating (Total rating = unit rating × 1.5)
** :Total rating
JEDEC
JEITA
TOSHIBA
1-2W1B
Weight: 0.003g (Typ.)
Electrical Characteristics
(Q1, Q2, Q3 Common, Ta = 25°C)
Characteristic
Symbol
V
F (1)
Forward voltage
V
F (2)
V
F (3)
Reverse current
Total capacitance
I
R
C
T
Test
Circuit
Test Condition
I
F
= 1mA
I
F
= 10mA
I
F
= 100mA
V
R
= 40V
V
R
= 0, f = 1MH
z
Min
Typ.
0.28
0.36
0.54
18
Max
0.60
5
V
Unit
μA
pF
Pin Assignment
(Top View)
5
4
Marking
Q1
1
2
Q2
3
A9
1
2007-11-01

 
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