NSPM3031
3.3V Bidirectional ESD and
Surge Protection Device
The NSPM3031 is designed to protect voltage sensitive components
from ESD. Excellent clamping capability, low leakage, high peak
pulse current handling capability and fast response time provide best
in class protection on designs that are exposed to ESD. Because of its
small size, it is suited for use in cellular phones, tablets, MP3 players,
digital cameras and many other portable applications where board
space comes at a premium.
Features
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•
•
•
•
Low Clamping Voltage
Low Leakage
Small Body Outline: 1.0 mm x 0.6 mm
Protection for the following IEC Standards:
IEC61000−4−2 Level 4:
±30
kV Contact Discharge
IEC61000−4−5 (Lightning) 45 A (8/20
ms)
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
MARKING
DIAGRAM
3M
X2DFN2
CASE 714AB
3
M
= Specific Device Code
= Date Code
•
Battery Line Protection
•
Audio Line Protection
•
GPIO
MAXIMUM RATINGS
Rating
IEC 61000−4−2 (ESD)
Operating Junction and Storage
Temperature Range
Maximum Peak Pulse Current
Contact
Air
T
J
, T
stg
I
PP
Symbol
Value
±30
±30
−65 to +150
45
Unit
kV
°C
A
ORDERING INFORMATION
Device
NSPM3031MXT5G
Package
X2DFN2
(Pb−Free)
Shipping
†
8000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
©
Semiconductor Components Industries, LLC, 2017
1
September, 2018 − Rev. 1
Publication Order Number:
NSPM3031/D
NSPM3031
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Symbol
I
PP
V
C
V
RWM
I
R
V
BR
I
T
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
PP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V
RWM
Breakdown Voltage @ I
T
Test Current
I
PP
R
DYN
I
T
V
C
V
BR
V
RWM
I
R
R
DYN
I
R
V
RWM
V
BR
V
C
I
T
V
I
PP
I
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
Bi−Directional Surge Protection
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Reverse Working Voltage
Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
Clamping Voltage TLP
(Note 1)
Symbol
V
RWM
V
BR
I
R
V
C
V
C
I/O Pin to GND
I
T
= 1 mA, I/O Pin to GND
V
RWM
= 3.3 V, I/O Pin to GND
IEC61000−4−2,
±8
kV Contact
I
PP
= 8 A, IEC61000−4−2 Level 2 Equivalent
(±4 kV Contact,
±
8 kV Air)
I
PP
= 16 A, IEC61000−4−2 Level 4 Equivalent
(±8 kV Contact,
±
15 kV Air)
Reverse Peak Pulse Current
Clamping Voltage 8x20
ms
Waveform per Figure 14
(Note 2)
Dynamic Resistance
Junction Capacitance
I
PP
V
C
IEC61000−4−5 (8 x 20
ms)
per Figure 14
I
PP
= 1 A
I
PP
= 40 A
I
PP
= 45 A
100 ns TLP Pulse
V
R
= 0 V, f = 1 MHz
45
4.5
6.5
7.0
0.037
87
200
5.5
7.1
7.6
See Figures 1 & 2
5.0
5.3
A
V
4.0
4.6
Conditions
Min
Typ
Max
3.3
5.5
0.1
Unit
V
V
mA
V
V
R
DYN
C
J
W
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. ANSI/ESD STM5.5.1 Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model.
TLP condtions: Z
0
= 50
W,
t
p
= 100 ns, t
r
= 0.1 ns, averaging window: t
1
= 70 ns to t
2
= 90 ns.
2. Non−repetitive current pulse at T
A
= 25°C, per IEC61000−4−5 waveform.
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NSPM3031
TYPICAL CHARACTERISTICS
40
35
30
VOLTAGE (V)
VOLTAGE (V)
120
25
20
15
10
5
0
−5
−20
0
20
40
60
TIME (ns)
80
100
140
5
0
−5
−10
−15
−20
−25
−30
−35
−40
−20
0
20
40
60
TIME (ns)
80
100
120
140
Figure 1. ESD Clamping Voltage
Positive 8 kV Contact per IEC61000−4−2
20
18
16
14
I
TLP
(A)
12
10
8
6
4
2
0
0
1
2
3
4
5
6
7
8
9
V
CTLP
(V)
10
9
8
7
V
IEC
Eq (kV)
6
5
4
3
2
1
0
10
20
18
16
14
I
TLP
(A)
12
10
8
6
4
2
0
0
1
Figure 2. ESD Clamping Voltage
Negative 8 kV Contact per IEC61000−4−2
10
9
8
7
6
5
4
3
2
1
0
2
3
4
5
6
7
8
9
10
V
CTLP
(V)
V
IEC
Eq (kV)
Figure 3. Positive TLP I−V Curve
Figure 4. Negative TLP I−V Curve
9
8
7
V
C
@ I
PK
(V)
V
C
@ I
PK
(V)
35 40
45 50
55 60
6
5
4
3
2
1
0
0
5
10
15
20
25 30
I
PK
(A)
9
8
7
6
5
4
3
2
1
0
0
5
10
15
20
25 30 35
I
PK
(A)
40 45
50
55
60
Figure 5. Positive Clamping Voltage vs. Peak
Pulse Current (t
p
= 8/20
ms)
Figure 6. Negative Clamping Voltage vs. Peak
Pulse Current (t
p
= 8/20
ms)
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NSPM3031
TYPICAL CHARACTERISTICS
1E−03
1E−04
1E−05
1E−06
I
R
(A)
1E−07
1E−08
1E−09
1E−10
1E−11
−5
−4
−3
−2
−1
0
V
R
(V)
1
2
3
4
5
I
R
(A)
1E−03
1E−04
1E−05
1E−06
1E−07
1E−08
1E−09
1E−10
1E−11
1E−12
−6 −5
−4 −3
−2 −1
0
V
R
(V)
1
2
3
4
5
6
Figure 7. Breakdown Voltage
100
90
80
70
C (pF)
60
50
40
30
20
10
0
−4
Figure 8. Reverse Leakage Current
−3
−2
−1
0
V
BIAS
(V)
1
2
3
4
Figure 9. Line Capacitance,
f
= 1 MHz
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NSPM3031
Transmission Line Pulse (TLP) Measurement
Transmission Line Pulse (TLP) provides current versus
voltage (I−V) curves in which each data point is obtained
from a 100 ns long rectangular pulse from a charged
transmission line. A simplified schematic of a typical TLP
system is shown in Figure 10. TLP I−V curves of ESD
protection devices accurately demonstrate the product’s
ESD capability because the 10s of amps current levels and
under 100 ns time scale match those of an ESD event. This
is illustrated in Figure 11 where an 8 kV IEC 61000−4−2
current waveform is compared with TLP current pulses at
8 A and 16 A. A TLP I−V curve shows the voltage at which
the device turns on as well as how well the device clamps
voltage over a range of current levels. For more information
on TLP measurements and how to interpret them please
refer to AND9007/D.
L
50
W
Coax
Cable
S
Attenuator
÷
10 MW
I
M
50
W
Coax
Cable
V
M
V
C
Oscilloscope
DUT
Figure 10. Simplified Schematic of a Typical TLP
System
Figure 11. Comparison Between 8 kV IEC 61000−4−2 and 8 A and 16 A TLP Waveforms
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