SiT1630
Ultra-Low Power, Ultra-Small 32.768 kHz or 16.384 kHz Oscillator
Features
Applications
<20 ppm initial tolerance
<100 ppm stability over -40°C to +85°C
Small SMD package: 2.0 x 1.2 mm (2012)
[1]
SOT23-5 package option for industrial and
automotive applications
Ultra-low power: 1.0 µA typ
Vdd supply range: 1.5V to 3.63V
Wide operating temperature range options
Internal filtering eliminates external Vdd bypass capacitors
Pb-free, RoHS and REACH compliant
Industrial timekeeping
Industrial battery management
Multi-drop 32 kHz clock distribution
Bluetooth modules
WiFi modules
RTC Reference Clock
Note:
1. For the smallest 32 kHz XO in CSP (1.2mm
2
), consider the
SiT1532.
Table 1. Electrical Characteristics
Parameter
Symbol
Min.
Typ.
Max.
Unit
Condition
Frequency and Stability
32.768 or
kHz
16.384
Frequency Stability
20
75
Frequency Stability Over
Temperature
[3]
25°C Aging
F_stab
-1
100
150
1
ppm
ppm
ppm
T
A
= 25°C, post reflow, Vdd: 1.5V – 3.63V.
T
A
= -10°C to +70°C, Vdd: 1.5V – 3.63V.
T
A
= -40°C to +85°C, Vdd: 1.5V – 3.63V.
T
A
= -40°C to +105°C, -55°C to +85C, Vdd: 1.8V – 3.63V.
1
st
Year
T
A
= over temperature
T
A
= 25°C, Vdd: 1.5V – 3.3V. No load
1.3
1.4
2.80
Power-Supply Ramp
t_Vdd
Ramp
180
Start-up Time at Power-up
T_start
100
300
450
500 + 1
period
Commercial Temperature
Industrial Temperature
Extended Industrial Temperature
Extended Cold Industrial Temperature
Automotive Temperature Range
T_opn
-10
-40
-40
-55
-55
100
48
90%
10%
50
T_jitt
35
70
85
105
85
105
200
52
°C
ms
ms
μA
T
A
= -10°C to +70°C, Vdd max: 3.63V. No load
T
A
= -40°C to +85°C, Vdd max: 3.63V. No load
T
A
= -40°C to +105°C, Vdd max: 3.63V. No load
Over temperature, 0 to 90% Vdd
-40°C ≤ T
A
≤ 50°C, valid output
-40°C ≤ T
A
≤ 85°C, valid output
T
A
= -55°C and +105°C
Output Frequency
[2]
Fout
Initial Tolerance
F_init
Supply Voltage and Current Consumption
Operating Supply Voltage
Vdd
1.5
1.0
Operating Current
2Idd
3.63
V
Operating Temperature Range
Temp code “C” in part number ordering
Temp code “I” in part number ordering
Temp code “E” in part number ordering.
Temp Code “D” in part number ordering.
Contact
SiTime
for Availability
10-90%, 15 pF load, Vdd = 1.5V to 3.63V
10-90% (Vdd), 5 pF load, Vdd ≥ 1.62V
Vdd: 1.5V – 3.63V. I
OH
= -10 μA, 15 pF
Vdd: 1.5V – 3.63V. I
OL
= 10 μA, 15 pF
≥80% LVCMOS swing, T
A
= over temperature, Vdd = 1.5V to 3.3V
Cycles = 10,000, TA = 25°C
LVCMOS Output, T
A
= Over Temperature, typical values are at T
A
= 25°C
Output Rise/Fall Time
Output Clock Duty Cycle
Output Voltage High
Output Voltage Low
Maximum Output Drive
Period Jitter
tr, tf
DC
VOH
VOL
ns
%
V
V
pF
ns
RMS
Notes:
2. Measured peak-to-peak. Tested with Agilent 53132A frequency counter. Due to the low operating frequency, the gate time must be ≥100 ms to ensure
an accurate frequency measurement.
3. Measured peak-to-peak. Inclusive of Initial Tolerance at 25°C, and variations over operating temperature, rated power supply voltage and load.
Rev 1.3
February 9, 2018
www.sitime.com
SiT1630
Ultra-Low Power, Ultra-Small 32.768 kHz and 16.384 kHz Oscillator
Table 2. Pin Configuration
SMD
Pin
1
2
3
SOT23-5
Pin
2, 3
1
5
Symbol
NC/GND
GND
CLK Out
I/O
No Connect
Power Supply
Ground
OUT
Connect to GND or leave floating.
Connect to ground. All GND pins must be connected to power supply ground.
Oscillator clock output. When interfacing to an MCU’s XTAL input, the CLK Out is typically connected to
the receiving IC’s X IN pin.
Connect to power supply 1.5V ≤ Vdd ≤ 3.63V. Under normal operating conditions, Vdd does not require
external bypass/decoupling capacitor(s). Internal power supply filtering will reject more than ±150 mVpp with
frequency components through 10 MHz.
Functionality
4
4
Vdd
Power Supply
SOT23-5 (Top View)
GND
1
SMD Package (Top View)
Vdd
CLK Out
4
•
YXXX
5
NC/GND
2
NC
4
1
2
3
CLK Out
NC/GND
3
VDD
GND
Figure 1. Pin Assignments
Figure 2. Pin Assignments
System Block Diagram
MEMS Resonator
NC/GND
Control
Regulators
Vdd
Trim
Prog
Prog
GND
Sustaining
Amp
Ultra-low
Power
PLL
Divider
Ultra-low
Power
Driver
CLK Out
Figure 3. SIT1630 Block Diagram
Table 3. Absolute Maximum
Attempted operation outside the absolute maximum ratings cause permanent damage to the part. Actual performance of the
IC is only guaranteed within the operational specifications, not at absolute maximum ratings.
Parameter
Continuous Power Supply Voltage Range (Vdd)
Short Duration Maximum Power Supply Voltage (Vdd)
Short Duration Maximum Operating Temperature Range
Maximum Continuous Operating Life at Temperature Extreme
(meeting datasheet limits)
Human Body Model ESD Protection
Charge-Device Model (CDM) ESD Protection
Machine Model (MM) ESD Protection
Latch-up Tolerance
Mechanical Shock Resistance
Mechanical Vibration Resistance
2012 SMD Junction Temperature
SOT23-5 Junction Temperature
Storage Temperature
Mil 883, Method 2002
Mil 883, Method 2007
≤30 minutes, over -40°C to +85°C
Vdd = 1.5V - 3.63V, ≤30 mins
T
A
= -55°C, Continuous
Vdd = 1.8V
–
3.3V
±10%
JESD22-A114
JESD22-C101
JESD22-A115
Test Condition
Value
-0.5 to 3.63
4.0
125
8
3000
750
300
JESD78 Compliant
10,000
70
150
150
-65°C to 150°C
g
g
°C
°C
Unit
V
V
°C
Hours
V
V
V
Rev 1.3
Page 2 of 9
www.sitime.com
SiT1630
Ultra-Low Power, Ultra-Small 32.768 kHz and 16.384 kHz Oscillator
Description
Frequency Stability (ppm)
The SiT1630 is an ultra-small and ultra-low power 32.768 kHz
oscillator optimized for battery-powered applications.
SiTime’s MEMS oscillators consist of MEMS resonators and
a programmable analog circuit. Our MEMS resonators are
built with SiTime’s unique MEMS First™ process. A key
manufacturing step is EpiSeal™ during which the MEMS
resonator is annealed with temperatures over 1000°C.
EpiSeal creates an extremely strong, clean, vacuum chamber
that encapsulates the MEMS resonator and ensures the best
performance and reliability. During EpiSeal, a poly silicon cap
is grown on top of the resonator cavity, which eliminates the
need for additional cap wafers or other exotic packaging. As
a result, SiTime’s MEMS resonator die can be used like any
other semiconductor die. One unique result of SiTime’s
MEMS First and EpiSeal manufacturing processes is the
capability to integrate SiTime’s MEMS die with a SOC, ASIC,
microprocessor or analog die within a package to eliminate
external timing components and provide a highly integrated,
smaller, cheaper solution to the customer.
SiT1630 Industrial Temp Specification
SiT1630 20 ppm
Max @ 25C
Quartz XTAL
-160 to -220 ppm Over Temp
Temperature (°C)
Figure 4. SiTime vs. Quartz
Power Supply Noise Immunity
The SiT1630 is an ultra-small 32 kHz oscillator. In addition
to eliminating external output load capacitors common with
standard XTALs, this device includes special power supply
filtering and thus, eliminates the need for an external Vdd
bypass-decoupling capacitor. This feature further simplifies
the design and keeps the footprint as small as possible.
Internal power supply filtering is designed to reject AC-
noise greater than ±150 mVpp magnitude and beyond
10 MHz frequency component.
Frequency Stability
The SiT1630 is factory calibrated (trimmed) to guarantee
frequency stability to be less than 20 ppm at room
temperature and very tight stability over temperature. Unlike
quartz crystals that have a classic tuning fork parabola
temperature curve with a 25°C turnover point, the SiT1630
temperature coefficient is extremely flat across temperature.
When measuring the SiT1630 output frequency with a
frequency counter, it is important to make sure the counter's
gate time is >100 ms. The slow frequency of a 32 kHz clock
will give false readings with faster gate times.
Power-up
The SiT1630 starts-up to a valid output frequency within
300 ms (180 ms typ). To ensure the device starts-up within
the specified limit, make sure the power-supply ramps-up in
approximately 10 – 20 ms (to within 90% of Vdd).
Rev 1.3
Page 3 of 9
www.sitime.com
SiT1630
Ultra-Low Power, Ultra-Small 32.768 kHz and 16.384 kHz Oscillator
Typical Operating Curves
(T
A
= 25°C, Vdd = 1.8V, unless otherwise stated)
Initial Tolerance (ppm)
T
A
= 25°C Post Reflow
Frequency Stability (PPM)
Number of Devices
Temperature (°C)
Figure 5. Initial Tolerance Histogram
Figure 6. Frequency Stability Over Temperature
No Load Current (µA)
Temperature (°C)
Voltage (V)
Time (sec)
Figure 7. Supply Current Over Temperature
(No Load)
Figure 8. Start-up Time
Rev 1.3
Page 4 of 9
www.sitime.com
SiT1630
Ultra-Low Power, Ultra-Small 32.768 kHz and 16.384 kHz Oscillator
Figure 9. Power Supply Noise Rejection (±150mV Noise)
Figure 10. LVCMOS Output Waveform
(Vswing = 1.8V, SiT1630AI-H4-DCC-32.768)
Rev 1.3
Page 5 of 9
www.sitime.com
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
