Si4974DY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
Channel-1
30
Channel-2
R
DS(on)
(Ω)
0.019 at V
GS
= 10 V
0.026 at V
GS
= 4.5 V
0.035 at V
GS
= 10 V
0.048 at V
GS
= 4.5 V
I
D
(A)
8.0
6.9
6.0
5.0
FEATURES
•
Halogen-free According to IEC 61249-2-21
Available
• TrenchFET
®
Power MOSFETs
• 100 % R
g
Tested
APPLICATIONS
• Logic DC/DC
- Notebook PC
D
1
D
2
SO-8
S
1
G
1
S
2
G
2
1
2
3
4
Top View
Ordering Information:
Si4974DY-T1-E3 (Lead (Pb)-free)
Si4974DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
8
7
6
5
D
1
D
1
D
2
D
2
S
1
N-Channel 1
MOSFET
S
2
N-Channel 2
MOSFET
G
1
G
2
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Channel-1
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Single Pulse Avalanche Current
Avalanche Energy
Maximum Power Dissipation
a
L = 0.1 mH
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
I
AS
E
AS
P
D
T
J
, T
stg
2
1.3
1.8
15
11
1.1
0.7
2
1.3
- 55 to 150
8.0
6.5
40
1.0
1.8
7
2.45
1.1
0.7
mJ
W
°C
6.0
4.7
10 s
Steady State
30
± 20
6.0
4.8
30
1.0
4.4
3.5
A
10 s
Channel-2
Steady State
Unit
V
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Channel-1
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
t
≤
10 s
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typ.
50
90
30
Max.
62.5
110
40
52
91
32
Channel-2
Typ.
Max.
62.5
110
40
°C/W
Unit
Document Number: 73052
S09-0228-Rev. D, 09-Feb-09
www.vishay.com
1
Si4974DY
Vishay Siliconix
MOSFET SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 30 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V, T
J
= 85 °C
On-State Drain Current
b
I
D(on)
V
DS
=
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 8.0 A
Drain-Source On-State Resistance
b
R
DS(on)
V
GS
= 10 V, I
D
= 6.0 A
V
GS
= 4.5 V, I
D
= 6.9 A
V
GS
= 4.5 V, I
D
= 5.0 A
Forward Transconductance
b
Diode Forward Voltage
b
Dynamic
a
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
Channel-1
V
DD
= 15 V, R
L
= 15
Ω
I
D
≅
1 A, V
GEN
= 10 V, R
G
= 6
Ω
Channel-2
V
DD
= 15 V, R
L
= 15
Ω
I
D
≅
1 A, V
GEN
= 10 V, R
G
= 6
Ω
I
F
= 1.8 A, dI/dt = 100 A/µs
Channel-2
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 6.0 A
Ch-1
Channel-1
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 8.0 A
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
0.8
0.9
7.0
3.3
2.6
1.2
3.0
1.5
1.5
1.95
8
6
12
11
22
15
6
6
20
15
2.3
2.9
15
10
20
18
35
25
10
10
40
30
ns
Ω
11
5
nC
g
fs
V
SD
V
DS
= 15 V, I
D
= 8.0 A
V
DS
= 15 V, I
D
= 6.0 A
I
S
= 1.8 A, V
GS
= 0 V
I
S
= 1.8 A, V
GS
= 0 V
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
20
20
0.016
0.029
0.0215
0.040
19
13
0.8
0.8
1.1
1.1
0.019
0.035
0.026
0.048
S
V
Ω
1.0
1.0
3.0
3.0
± 100
± 100
1
1
15
15
A
µA
V
nA
Symbol
Test Conditions
Min.
Typ.
a
Max.
Unit
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 73052
S09-0228-Rev. D, 09-Feb-09
Si4974DY
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS
40
V
GS
= 10 V thru 5 V
35
30
I
D
- Drain Current (A)
25
20
15
10
5
0
0
1
2
3
4
5
4V
I
D
- Drain Current (A)
35
30
25
20
15
10
5
0
0
1
2
3
4
5
6
V
DS
- Drain-to-Source Voltage (V)
T
C
= 125 °C
25 °C, unless otherwise noted
40
25 °C
- 55 °C
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.05
1200
Transfer Characteristics
R
DS(on)
- On-Resistance (Ω)
0.04
C - Capacitance (pF)
1000
800
0.03
V
GS
= 4.5 V
V
GS
= 10 V
600
0.02
400
C
oss
200
C
rss
0
5
10
15
20
25
30
C
iss
0.01
0.00
0
5
10
15
20
25
30
35
40
0
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
6
V
DS
= 15 V
I
D
= 8 A
1.4
R
DS(on)
- On-Resistance
1.6
V
GS
= 10 V
I
D
= 8 A
Capacitance
V
GS
- Gate-to-Source Voltage (V)
5
4
(Normalized)
1.2
3
1.0
2
1
0.8
0
0
2
4
6
8
10
Q
g
- Total Gate Charge (nC)
0.6
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 73052
S09-0228-Rev. D, 09-Feb-09
www.vishay.com
3
Si4974DY
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
40
0.10
T
J
= 150 °C
10
R
DS(on)
- On-Resistance (Ω)
0.08
I
S
- Source Current (A)
0.06
I
D
= 8 A
0.04
T
J
= 25 °C
0.02
1
0.0
0.00
0.3
0.6
0.9
1.2
1.5
0
2
4
6
8
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
0.4
0.2
0.0
- 0.2
- 0.4
- 0.6
- 0.8
- 1.0
- 50
10
I
D
= 250 µA
Power (W)
40
50
On-Resistance vs. Gate-to-Source Voltage
V
GS(th)
Variance (V)
30
20
- 25
0
25
50
75
100
125
150
0
10
-3
10
-2
10
-1
1
Time (s)
10
100
600
T
J
- Temperature (°C)
Threshold Voltage
100
Limited by R
DS(on)*
Single Pulse Power
I
D
- Drain Current (A)
10
1 ms
1
10 ms
100 ms
0.1
T
C
= 25 °C
Single Pulse
1s
10 s
DC
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Case
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4
Document Number: 73052
S09-0228-Rev. D, 09-Feb-09
Si4974DY
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
0.05
t
1
P
DM
0.02
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 90 °C/W
t
1
t
2
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
1
Square Wave Pulse Duration (s)
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Document Number: 73052
S09-0228-Rev. D, 09-Feb-09
www.vishay.com
5
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