SGW10N60RUFD
IGBT
SGW10N60RUFD
Short Circuit Rated IGBT
General Description
Fairchild's RUFD series of Insulated Gate Bipolar
Transistors (IGBTs) provide low conduction and switching
losses as well as short circuit ruggedness. The RUFD
series is designed for applications such as motor control,
uninterrupted power supplies (UPS) and general inverters
where short circuit ruggedness is a required feature.
Features
•
•
•
•
•
Short circuit rated 10us @ T
C
= 100°C, V
GE
= 15V
High speed switching
Low saturation voltage : V
CE(sat)
= 2.2 V @ I
C
= 10A
High input impedance
CO-PAK, IGBT with FRD : t
rr
= 42ns (typ.)
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
C
C
G
G
E
D2-PAK
E
T
C
= 25°C unless otherwise noted
Absolute Maximum Ratings
Symbol
V
CES
V
GES
I
C
I
CM (1)
I
F
I
FM
T
SC
P
D
T
J
T
stg
T
L
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
@ T
C
= 25°C
@ T
C
= 100°C
@ T
C
= 100°C
@ T
C
= 100°C
@ T
C
= 25°C
@ T
C
= 100°C
SGW10N60RUFD
600
±
20
16
10
30
12
92
10
75
30
-55 to +150
-55 to +150
300
Units
V
V
A
A
A
A
A
us
W
W
°C
°C
°C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
R
θJC
(IGBT)
R
θJC
(DIODE)
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient (PCB Mount)
(2)
Typ.
--
--
--
Max.
1.6
2.5
40
Units
°C/W
°C/W
°C/W
Notes :
(2) Mounted on 1” squre PCB (FR4 or G-10 Material)
©2002 Fairchild Semiconductor Corporation
SGW10N60RUFD Rev. A1
SGW10N60RUFD
Electrical Characteristics of the IGBT
T
Symbol
Parameter
C
= 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
CES
∆B
VCES
/
∆T
J
I
CES
I
GES
Collector-Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
V
GE
= 0V, I
C
= 250uA
V
GE
= 0V, I
C
= 1mA
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
600
--
--
--
--
0.6
--
--
--
--
250
± 100
V
V/°C
uA
nA
On Characteristics
V
GE(th)
V
CE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
I
C
= 10mA, V
CE
= V
GE
I
C
= 10A
,
V
GE
= 15V
I
C
= 16A
,
V
GE
= 15V
5.0
--
--
6.0
2.2
2.5
8.5
2.8
--
V
V
V
Dynamic Characteristics
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
CE
= 30V
,
V
GE
= 0V,
f = 1MHz
--
--
--
660
115
25
--
--
--
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
sc
Q
g
Q
ge
Q
gc
L
e
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Internal Emitter Inductance
--
--
--
--
--
--
--
--
--
--
--
--
--
--
10
--
--
--
--
15
30
36
158
141
215
356
16
33
42
242
161
452
613
--
30
5
8
7.5
--
--
50
200
--
--
500
--
--
60
350
--
--
860
--
45
10
16
--
ns
ns
ns
ns
uJ
uJ
uJ
ns
ns
ns
ns
uJ
uJ
uJ
us
nC
nC
nC
nH
V
CC
= 300 V, I
C
= 10A,
R
G
= 20Ω, V
GE
= 15V,
Inductive Load, T
C
= 25°C
V
CC
= 300 V, I
C
= 10A,
R
G
= 20Ω, V
GE
= 15V,
Inductive Load, T
C
= 125°C
@
T
C
=
V
CC
= 300 V, V
GE
= 15V
100°C
V
CE
= 300 V, I
C
= 10A,
V
GE
= 15V
Measured 5mm from PKG
Electrical Characteristics of DIODE
T
Symbol
V
FM
t
rr
I
rr
Q
rr
Parameter
Diode Forward Voltage
Diode Reverse Recovery Time
Diode Peak Reverse Recovery
Current
Diode Reverse Recovery Charge
C
= 25°C unless otherwise noted
Test Conditions
T
C
= 25°C
I
F
= 12A
T
C
= 100°C
T
C
= 25°C
T
C
= 100°C
I
F
= 12A,
di/dt = 200A/us
T
C
= 25°C
T
C
= 100°C
T
C
= 25°C
T
C
= 100°C
Min.
--
--
--
--
--
--
--
--
Typ.
1.4
1.3
42
60
3.5
5.6
80
220
Max.
1.7
--
60
--
6.0
--
180
--
Units
V
ns
A
nC
©2002 Fairchild Semiconductor Corporation
SGW10N60RUFD Rev. A1
SGW10N60RUFD
40
35
Common Emitter
T
C
= 25℃
30
20V
15V
25
12V
Collector Current, I
C
[A]
30
25
20
15
10
V
GE
= 10V
Collector Current, I
C
[A]
Common Emitter
V
GE
= 15V
T
C
= 25℃
━━
T
C
= 125℃ ------
20
15
10
5
5
0
0
2
4
6
8
0
1
10
Collector - Emitter Voltage, V
CE
[V]
Collector - Emitter Voltage, V
CE
[V]
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage Characteristics
4.0
16
Common Emitter
V
GE
= 15V
14
20A
12
V
CC
= 300V
Load Current : peak of square wave
Collector - Emitter Voltage, V
CE
[V]
3.5
3.0
Load Current [A]
10
8
6
4
2.5
10A
2.0
I
C
= 5A
1.5
2
1.0
-50
0
50
100
150
0
Duty cycle : 50%
T
C
= 100℃
Power Dissipation = 18W
0.1
1
10
100
1000
Case Temperature, T
C
[℃]
Frequency [KHz]
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
20
Common Emitter
T
C
= 25℃
20
Common Emitter
T
C
= 125℃
Collector - Emitter Voltage, V
CE
[V]
Collector - Emitter Voltage, V
CE
[V]
16
16
12
12
8
8
4
I
C
= 5A
0
0
4
8
20A
10A
20A
4
I
C
= 5A
0
10A
12
16
20
0
4
8
12
16
20
Gate - Emitter Voltage, V
GE
[V]
Gate - Emitter Voltage, V
GE
[V]
Fig 5. Saturation Voltage vs. V
GE
©2002 Fairchild Semiconductor Corporation
Fig 6. Saturation Voltage vs. V
GE
SGW10N60RUFD Rev. A1
SGW10N60RUFD
1400
Common Emitter
V
GE
= 0V, f = 1MHz
T
C
= 25℃
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
I
C
= 10A
T
C
= 25℃
━━
T
C
= 125℃ ------
100
1200
Ton
Capacitance [pF]
Switching Time [ns]
1000
Cies
800
Tr
600
400
Coes
200
Cres
0
1
10
10
10
100
Collector - Emitter Voltage, V
CE
[V]
Gate Resistance, R
G
[
Ω
]
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs.
Gate Resistance
1000
Switching Time [ns]
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
I
C
= 10A
T
C
= 25℃
━━
T
C
= 125℃ ------
1000
Toff
Toff
Tf
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
I
C
= 10A
T
C
= 25℃
━━
T
C
= 125℃ ------
Eoff
Eon
Eoff
Tf
Switching Loss [uJ]
100
100
10
100
10
100
Gate Resistance, R
G
[
Ω
]
Gate Resistance, R
G
[
Ω
]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
1000
Common Emitter
V
GE
=
±
15V, R
G
= 20
Ω
T
C
= 25℃
━━
T
C
= 125℃ ------
Common Emitter
V
GE
=
±
15V, R
G
= 20
Ω
T
C
= 25℃
━━
T
C
= 125℃ ------
Ton
Switching Time [ns]
100
Switching Time [ns]
Toff
Tf
Toff
Tf
100
Tr
10
6
8
10
12
14
16
18
20
6
8
10
12
14
16
18
20
Collector Current, I
C
[A]
Collector Current, I
C
[A]
Fig 11. Turn-On Characteristics vs.
Collector Current
©2002 Fairchild Semiconductor Corporation
Fig 12. Turn-Off Characteristics vs.
Collector Current
SGW10N60RUFD Rev. A1
SGW10N60RUFD
15
1000
Common Emitter
V
GE
=
±
15V, R
G
= 20
Ω
T
C
= 25℃
━━
T
C
= 125℃ ------
Gate - Emitter Voltage, V
GE
[ V ]
Common Emitter
R
L
= 30
Ω
T
C
= 25℃
V
CC
= 100 V
300 V
200 V
12
Switching Loss [uJ]
9
Eoff
6
100
Eon
3
0
5
10
15
20
0
10
20
30
Collector Current, I
C
[A]
Gate Charge, Q
g
[ nC ]
Fig 13. Switching Loss vs. Collector Current
Fig 14. Gate Charge Characteristics
100
I
C
MAX. (Pulsed)
50us
I
C
MAX. (Continuous)
50
Collector Current, I
C
[A]
10
100us
1㎳
Collector Current, I
C
[A]
10
DC Operation
1
Single Nonrepetitive
Pulse T
C
= 25℃
Curves must be derated
linearly with increase
in temperature
0.1
0.1
1
10
100
1000
1
1
Safe Operating Area
V
GE
= 20V, T
C
= 100℃
10
100
1000
Collector-Emitter Voltage, V
CE
[V]
Collector-Emitter Voltage, V
CE
[V]
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA Characteristics
10
Thermal Response, Zthjc [
℃
/W]
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
Pdm
t1
t2
0.01
single pulse
10
-5
Duty factor D = t1 / t2
Peak Tj = Pdm
×
Zthjc + T
C
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Rectangular Pulse Duration [sec]
Fig 17. Transient Thermal Impedance of IGBT
©2002 Fairchild Semiconductor Corporation
SGW10N60RUFD Rev. A1
嵌入式系统
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