RN2910FE,RN2911FE
TOSHIBA Transistor
Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor)
RN2910FE, RN2911FE
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
•
•
•
•
Two devices are incorporated into an Extreme-Super-Mini (6-pin)
package.
Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enables the manufacture of ever more
compact equipment and lowers assembly cost.
Complementary to RN1910FE, RN1911FE
Unit: mm
Equivalent Circuit
C
B
R1
E
JEDEC
JEITA
TOSHIBA
―
―
2-2N1G
Weight: 0.003g (typ.)
Absolute Maximum Ratings
(Ta = 25°C)
(Q1, Q2 common)
Equivalent Circuit
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
(Note 1)
T
j
T
stg
Rating
−50
−50
−5
−100
100
150
−55
to 150
Unit
V
V
V
mA
mW
°C
°C
1
2
3
Q1
Q2
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
(top view)
6
5
4
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Note 1: Total rating
Start of commercial production
2000-05
1
2014-03-01
RN2910FE,RN2911FE
Electrical Characteristics
(Ta = 25°C) (Q1, Q2 common)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Input resistor
RN2910FE
RN2911FE
Symbol
I
CBO
I
EBO
h
FE
V
CE (sat)
f
T
C
ob
R1
Test Condition
V
CB
= −50
V, I
E
=
0
V
EB
= −5
V, I
C
=
0
V
CE
= −5
V, I
C
= −1
mA
I
C
= −5
mA, I
B
= −0.25
mA
V
CE
= −10
V, I
C
= −5
mA
V
CB
= −10
V, I
E
=
0, f
=
1 MHz
⎯
Min
⎯
⎯
120
⎯
⎯
⎯
3.29
7
Typ.
⎯
⎯
⎯
−0.1
200
3
4.7
10
Max
−100
−100
400
−0.3
⎯
6
6.11
13
V
MHz
pF
kΩ
Unit
nA
nA
2
2014-03-01
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