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1N5617E3

产品描述RECTIFIER
产品类别半导体    分立半导体   
文件大小149KB,共3页
制造商Microsemi
官网地址https://www.microsemi.com
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1N5617E3概述

RECTIFIER

1N5617E3规格参数

参数名称属性值
二极管类型标准
电压 - DC 反向(Vr)(最大值)400V
电流 - 平均整流(Io)1A
不同 If 时的电压 - 正向(Vf800mV @ 3A
速度快速恢复 =< 500 ns,> 200mA(Io)
反向恢复时间(trr)150ns
不同 Vr 时的电流 - 反向漏电流500nA @ 400V
不同 Vr,F 时的电容35pF @ 12V,1MHz
安装类型通孔
封装/外壳A,轴向
供应商器件封装A,轴向
工作温度 - 结-65°C ~ 175°C

文档预览

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1N5615US thru 1N5623US
SURFACE MOUNT VOIDLESS-
HERMETICALLY SEALED FAST
RECOVERY GLASS RECTIFIERS
SCOTTSDALE DIVISION
DESCRIPTION
This “fast recovery” surface mount rectifier diode series is military qualified to MIL-
PRF-19500/429 and is ideal for high-reliability applications where a failure cannot
be tolerated. These industry-recognized 1.0 Amp rated rectifiers for working peak
reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-glass
construction using an internal “Category I” metallurgical bond. These devices are
also available in axial-leaded package configurations for thru-hole mounting (see
separate data sheet for 1N5615 thru 1N5623). Microsemi also offers numerous
other rectifier products to meet higher and lower current ratings with various
recovery time speed requirements including fast and ultrafast device types in both
through-hole and surface mount packages.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
APPEARANCE
WWW .
Microsemi
.C
OM
Package “A”
or D-5A
FEATURES
Surface mount package series equivalent to the
JEDEC registered 1N5615 to 1N5623 series
Voidless hermetically sealed glass package
Triple-Layer Passivation
Internal “Category
I”
Metallurgical bonds
Working Peak Reverse Voltage 200 to 1000 Volts.
JAN, JANTX, JANTXV, and JANS available per MIL-
PRF-19500/429
Axial-leaded equivalents also available (see separate
data sheet for 1N5615 thru 1N5623)
APPLICATIONS / BENEFITS
Fast recovery 1 Amp rectifiers 200 to 1000 V
Military and other high-reliability applications
General rectifier applications including bridges, half-
bridges, catch diodes, etc.
High forward surge current capability
Extremely robust construction
Low thermal resistance
Controlled avalanche with peak reverse power
capability
Inherently radiation hard
as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
Junction & Storage Temperature: -65
o
C to +175
o
C
Thermal Resistance: 13
o
C/W junction to end cap
Thermal Impedance: 4.5
o
C/W @ 10 ms heating time
Average Rectified Forward Current (I
O
): 1.0 Amps @
T
A
= 55ºC
Forward Surge Current: 30 Amps @ 8.3 ms half-sine
Solder Temperatures: 260ºC for 10 s (maximum)
MECHANICAL AND PACKAGING
CASE: Hermetically sealed voidless hard glass
with Tungsten slugs
TERMINATIONS: End caps are Copper with
Tin/Lead (Sn/Pb) finish. Note: Previous inventory
had solid Silver end caps with Tin/Lead (Sn/Pb) finish.
MARKING & POLARITY: Cathode band only
TAPE & REEL option: Standard per EIA-481-B
WEIGHT: 193 mg
See package dimensions and recommended pad
layout on last page
REVERSE
CURRENT
(MAX.)
I
R
@ V
RWM
o
ELECTRICAL CHARACTERISTICS
TYPE
WORKING
PEAK
REVERSE
VOLTAGE
V
RWM
VOLTS
200
400
600
800
1000
MINIMUM
BREAKDOWN
VOLTAGE
V
BR
@ 50μA
VOLTS
220
440
660
880
1100
AVERAGE
RECTIFIED
CURRENT
I
O
@ T
A
(NOTE 1)
AMPS
o
o
50 C
100 C
.750
1.00
.750
1.00
.750
1.00
.750
1.00
.750
1.00
FORWAR
D
VOLTAGE
(MAX.)
V
F
@ 3A
VOLTS
.8 MIN.
CAPACITANCE
(MAX.)
C @ V
R
=
12 V
f=1 MHz
pF
45
35
25
20
15
MAXIMUM
SURGE
CURRENT
I
FSM
(NOTE 2)
AMPS
25
25
25
25
25
REVERSE
RECOVERY
(MAX.)
(NOTE 3)
t
rr
ns
150
150
250
300
500
1N5615US – 1N5623US
1N5615US
1N5617US
1N5619US
1N5621US
1N5623US
1.6
MAX.
25 C
.5
.5
.5
.5
.5
μA
o
100 C
25
25
25
25
25
NOTE 1:
From 1 Amp at T
A
= 55
o
C, derate linearly at 5.56 mA/
o
C to 0.75 Amp at T
A
= 100
o
C. From T
A
= 100
o
C,
derate linearly at 7.5 mA/
o
C to 0 Amps at T
A
= 200
o
C. These ambient ratings are for PC boards where thermal
o
resistance from mounting point to ambient is sufficiently controlled where T
J(max)
does not exceed 175 C.
NOTE 2:
T
A
= 100
o
C, f = 60 Hz, I
O
= 750 mA for ten 8.3 ms surges @ 1 minute intervals
NOTE 3:
I
F
= 0.5A, I
RM
= 1A, I
R(REC)
= 0.250 A
Copyright
©
2009
10-06-2009 REV E; SD47A.pdf
Microsemi
Page 1
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

 
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