EEPROM, 128X8, Serial, CMOS, PDSO8, 0.150 INCH, SOIC-8
| 参数名称 | 属性值 |
| 是否无铅 | 含铅 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | Catalyst |
| 零件包装代码 | SOIC |
| 包装说明 | SOP, SOP8,.25 |
| 针数 | 8 |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| Is Samacsys | N |
| 其他特性 | 3 WIRE INTERFACE |
| 备用内存宽度 | 16 |
| 最大时钟频率 (fCLK) | 1 MHz |
| 数据保留时间-最小值 | 100 |
| 耐久性 | 100000 Write/Erase Cycles |
| JESD-30 代码 | R-PDSO-G8 |
| JESD-609代码 | e0 |
| 长度 | 4.9 mm |
| 内存密度 | 1024 bit |
| 内存集成电路类型 | EEPROM |
| 内存宽度 | 8 |
| 功能数量 | 1 |
| 端子数量 | 8 |
| 字数 | 128 words |
| 字数代码 | 128 |
| 工作模式 | SYNCHRONOUS |
| 最高工作温度 | 70 °C |
| 最低工作温度 | |
| 组织 | 128X8 |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | SOP |
| 封装等效代码 | SOP8,.25 |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 并行/串行 | SERIAL |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 电源 | 5 V |
| 认证状态 | Not Qualified |
| 座面最大高度 | 1.75 mm |
| 串行总线类型 | MICROWIRE |
| 最大待机电流 | 0.0001 A |
| 最大压摆率 | 0.003 mA |
| 最大供电电压 (Vsup) | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | YES |
| 技术 | CMOS |
| 温度等级 | COMMERCIAL |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | GULL WING |
| 端子节距 | 1.27 mm |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 宽度 | 3.9 mm |
| 最长写入周期时间 (tWC) | 10 ms |
| 写保护 | SOFTWARE |
| Base Number Matches | 1 |
| CAT93C46BS | CAT93C46BSI | CAT93C46BPI | CAT93C46BP | CAT93C46BJI | CAT93C46BJ | CAT93C46BK | |
|---|---|---|---|---|---|---|---|
| 描述 | EEPROM, 128X8, Serial, CMOS, PDSO8, 0.150 INCH, SOIC-8 | EEPROM, 128X8, Serial, CMOS, PDSO8, 0.150 INCH, SOIC-8 | EEPROM, 128X8, Serial, CMOS, PDIP8, 0.300 INCH, PLASTIC, DIP-8 | EEPROM, 128X8, Serial, CMOS, PDIP8, 0.300 INCH, PLASTIC, DIP-8 | EEPROM, 128X8, Serial, CMOS, PDSO8, 0.150 INCH, SOIC-8 | EEPROM, 128X8, Serial, CMOS, PDSO8, 0.150 INCH, SOIC-8 | EEPROM, 128X8, Serial, CMOS, PDSO8, 0.210 INCH, EIAJ, SOIC-8 |
| 是否无铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| 厂商名称 | Catalyst | Catalyst | Catalyst | Catalyst | Catalyst | Catalyst | Catalyst |
| 零件包装代码 | SOIC | SOIC | DIP | DIP | SOIC | SOIC | SOIC |
| 包装说明 | SOP, SOP8,.25 | SOP, SOP8,.25 | DIP, DIP8,.3 | DIP, DIP8,.3 | SOP, SOP8,.25 | SOP, SOP8,.25 | SOP, SOP8,.3 |
| 针数 | 8 | 8 | 8 | 8 | 8 | 8 | 8 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 其他特性 | 3 WIRE INTERFACE | 3 WIRE INTERFACE | 3 WIRE INTERFACE | 3 WIRE INTERFACE | 3 WIRE INTERFACE | 3 WIRE INTERFACE | 3 WIRE INTERFACE |
| 备用内存宽度 | 16 | 16 | 16 | 16 | 16 | 16 | 16 |
| 最大时钟频率 (fCLK) | 1 MHz | 1 MHz | 1 MHz | 1 MHz | 1 MHz | 1 MHz | 1 MHz |
| 数据保留时间-最小值 | 100 | 100 | 100 | 100 | 100 | 100 | 100 |
| 耐久性 | 100000 Write/Erase Cycles | 100000 Write/Erase Cycles | 100000 Write/Erase Cycles | 100000 Write/Erase Cycles | 100000 Write/Erase Cycles | 100000 Write/Erase Cycles | 100000 Write/Erase Cycles |
| JESD-30 代码 | R-PDSO-G8 | R-PDSO-G8 | R-PDIP-T8 | R-PDIP-T8 | R-PDSO-G8 | R-PDSO-G8 | R-PDSO-G8 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
| 长度 | 4.9 mm | 4.9 mm | 9.27 mm | 9.27 mm | 4.9 mm | 4.9 mm | 5.3 mm |
| 内存密度 | 1024 bit | 1024 bit | 1024 bit | 1024 bit | 1024 bit | 1024 bit | 1024 bit |
| 内存集成电路类型 | EEPROM | EEPROM | EEPROM | EEPROM | EEPROM | EEPROM | EEPROM |
| 内存宽度 | 8 | 8 | 8 | 8 | 8 | 8 | 8 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 8 | 8 | 8 | 8 | 8 | 8 | 8 |
| 字数 | 128 words | 128 words | 128 words | 128 words | 128 words | 128 words | 128 words |
| 字数代码 | 128 | 128 | 128 | 128 | 128 | 128 | 128 |
| 工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
| 最高工作温度 | 70 °C | 85 °C | 85 °C | 70 °C | 85 °C | 70 °C | 70 °C |
| 组织 | 128X8 | 128X8 | 128X8 | 128X8 | 128X8 | 128X8 | 128X8 |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | SOP | SOP | DIP | DIP | SOP | SOP | SOP |
| 封装等效代码 | SOP8,.25 | SOP8,.25 | DIP8,.3 | DIP8,.3 | SOP8,.25 | SOP8,.25 | SOP8,.3 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE | IN-LINE | IN-LINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| 并行/串行 | SERIAL | SERIAL | SERIAL | SERIAL | SERIAL | SERIAL | SERIAL |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 电源 | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 座面最大高度 | 1.75 mm | 1.75 mm | 4.57 mm | 4.57 mm | 1.75 mm | 1.75 mm | 2.03 mm |
| 串行总线类型 | MICROWIRE | MICROWIRE | MICROWIRE | MICROWIRE | MICROWIRE | MICROWIRE | MICROWIRE |
| 最大待机电流 | 0.0001 A | 0.0001 A | 0.0001 A | 0.0001 A | 0.0001 A | 0.0001 A | 0.0001 A |
| 最大压摆率 | 0.003 mA | 0.003 mA | 0.003 mA | 0.003 mA | 0.003 mA | 0.003 mA | 0.003 mA |
| 最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | YES | YES | NO | NO | YES | YES | YES |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | COMMERCIAL | INDUSTRIAL | INDUSTRIAL | COMMERCIAL | INDUSTRIAL | COMMERCIAL | COMMERCIAL |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | GULL WING | GULL WING | THROUGH-HOLE | THROUGH-HOLE | GULL WING | GULL WING | GULL WING |
| 端子节距 | 1.27 mm | 1.27 mm | 2.54 mm | 2.54 mm | 1.27 mm | 1.27 mm | 1.27 mm |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 宽度 | 3.9 mm | 3.9 mm | 7.62 mm | 7.62 mm | 3.9 mm | 3.9 mm | 5.25 mm |
| 最长写入周期时间 (tWC) | 10 ms | 10 ms | 10 ms | 10 ms | 10 ms | 10 ms | 10 ms |
| 写保护 | SOFTWARE | SOFTWARE | SOFTWARE | SOFTWARE | SOFTWARE | SOFTWARE | SOFTWARE |
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