BF1100WR-TAPE-7概述

TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal

BF1100WR-TAPE-7规格参数

	BF1100WR-TAPE-7	BF1100WR-TAPE-13
描述	TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal	TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal
厂商名称	NXP(恩智浦)	NXP(恩智浦)
包装说明	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code	unknown	unknown
ECCN代码	EAR99	EAR99
Is Samacsys	N	N
其他特性	LOW NOISE	LOW NOISE
外壳连接	SOURCE	SOURCE
配置	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	14 V	14 V
最大漏极电流 (ID)	0.03 A	0.03 A
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)	0.035 pF	0.035 pF
最高频带	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND
JESD-30 代码	R-PDSO-G4	R-PDSO-G4
元件数量	1	1
端子数量	4	4
工作模式	DUAL GATE, ENHANCEMENT MODE	DUAL GATE, ENHANCEMENT MODE
最高工作温度	150 °C	150 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE
极性/信道类型	N-CHANNEL	N-CHANNEL
认证状态	Not Qualified	Not Qualified
表面贴装	YES	YES
端子形式	GULL WING	GULL WING
端子位置	DUAL	DUAL
晶体管应用	AMPLIFIER	AMPLIFIER
晶体管元件材料	SILICON	SILICON
Base Number Matches	1	1

器件捷径: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ