PD-97306
2N7630M2
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
THRU-HOLE (14-LEAD FLAT PACK)
Product Summary
Part Number Radiation Level R
DS(on)
I
D
IRHLA7970Z4 100K Rads (Si) 1.36Ω -0.56A
IRHLA7930Z4
300K Rads (Si)
1.36Ω
-0.56A
IRHLA7970Z4
60V, Quad P-CHANNEL
TECHNOLOGY
14-Lead Flat Pack
International Rectifier’s R7
TM
Logic Level Power
MOSFETs provide simple solution to interfacing
CMOS and TTL control circuits to power devices in
space and other radiation environments. The
threshold voltage remains within acceptable operating
limits over the full operating temperature and post
radiation. This is achieved while maintaining single
event gate rupture and single event burnout immunity.
These devices are used in applications such as
current boost low signal source in PWM, voltage
comparator and operational amplifiers.
Features:
n
n
n
n
n
n
n
n
n
n
5V CMOS and TTL Compatible
Low R
DS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Light Weight
Complimentary N-Channel Available -
IRHLA770Z4
Absolute Maximum Ratings (Per Die)
Parameter
ID @ VGS = -4.5V, TC=25°C
ID @ VGS = -4.5V, TC=100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Á
Avalanche Current
À
Repetitive Avalanche Energy
À
Peak Diode Recovery dv/dt
Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
For footnotes refer to the last page
-0.56
-0.35
-2.24
0.6
0.005
±10
26
-0.56
0.06
-5.79
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°
C
300 (0.63 in./1.6 mm from case for 10s)
0.52 (Typical)
g
www.irf.com
1
03/17/08
IRHLA7970Z4, 2N7630M2
Pre-Irradiation
Electrical Characteristics For Each P-Channel Device @Tj = 25°C
(Unless Otherwise specified)
Parameter
Min
Typ Max Units
—
-0.063
—
—
3.2
—
—
—
—
—
—
—
—
—
—
—
—
20
—
—
1.36
V
V/°C
Ω
Test Conditions
VGS = 0V, ID = -250µA
Reference to 25°C, ID = -1.0mA
VGS = -4.5V, ID = -0.35A
VDS = VGS, ID = -250µA
VDS = -10V, IDS = -0.35A
Ã
VDS= -48V ,VGS= 0V
VDS = -48V,
VGS = 0V, TJ =125°C
VGS = -10V
VGS = 10V
VGS = -4.5V, ID = -0.56A
VDS = -30V
VDD = -30V, ID = -0.56A,
VGS = -5.0V, RG = 24Ω
Ã
BVDSS
Drain-to-Source Breakdown Voltage
-60
∆BV
DSS /∆T J Temperature Coefficient of Breakdown —
Voltage
RDS(on)
Static Drain-to-Source On-State
—
Resistance
VGS(th)
Gate Threshold Voltage
-1.0
—
∆V
GS(th)/∆TJ Gate Threshold Voltage Coefficient
gfs
Forward Transconductance
0.7
IDSS
Zero Gate Voltage Drain Current
—
—
IGSS
IGSS
Qg
Q gs
Q gd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
-2.0
V
— mV/°C
—
S
-1.0
-10
µA
-100
100
2.8
1.7
1.2
22
22
40
32
—
nA
nC
ns
nH
Measured from Drain lead (6mm /0.25in
from pack.) to Source lead (6mm/0.25in
from pack.)with Source wire internally
bonded from Source pin to Drain pad
Ciss
C oss
C rss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
—
—
—
—
144
41
6.6
55
—
—
—
—
pF
Ω
VGS = 0V, VDS = -25V
f = 1.0MHz
f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter
IS
ISM
VSD
t rr
Q RR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
-0.56
-2.24
-5.0
35
9.6
Test Conditions
A
V
ns
nC
T
j
= 25°C, IS = -0.56A, VGS = 0V
Ã
Tj = 25°C, IF = -0.56A, di/dt
≤
-100A/µs
VDD
≤
-25V
Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance (Per Die)
Parameter
RthJA
Junction-to-Ambient
Min Typ Max Units
—
—
210
°C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available International Rectifier Website.
For footnotes refer to the last page
2
www.irf.com
Radiation Characteristics
Pre-Irradiation
IRHLA7970Z4, 2N7630M2
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics For Each P-Channel Device @Tj = 25°C, Post Total Dose Irradiation
ÄÅ
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-39)
Static Drain-to-Source On-state
Resistance (14-Lead Flat Pack)
Diode Forward Voltage
Up to 300K Rads (Si)
1
Min
Max
Units
V
nA
µA
Ω
Ω
V
Test Conditions
V
GS
= 0V, I
D
= -250µA
V
GS
= V
DS
, I
D
= -250µA
V
GS
= -10V
V
GS
= 10V
V
DS
= -48V, V
GS
= 0V
V
GS
= -4.5V, I
D
= -0.35A
V
GS
= -4.5V, I
D
= -0.35A
V
GS
= 0V, I
D
= -0.56A
-60
-1.0
—
—
—
—
—
—
—
-2.0
-100
100
-1.0
1.25
1.36
-5.0
1. Part numbers IRHLA7970Z4, IRHLA7930Z4
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area (Per Die)
Ion
LET
(MeV/(mg/cm ))
Br
I
Au
37
60
84
2
Energy Range
(MeV)
305
370
390
(µm)
39
34
30
0V
-60
-60
-60
2V
-60
-60
-60
4V
-60
-60
-60
5V
-60
-60
-60
VDS (V)
@VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS=
6V
-60
-60
-
7V
-50
-20
-
8V
-35
-
-
10V
-25
-
-
-70
-60
-50
-40
-30
-20
-10
0
0
1
2
3
4
5
VGS
6
7
8
9 10
Br
I
Au
Fig a.
Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
VDS
3
IRHLA7970Z4, 2N7630M2
Pre-Irradiation
10
-I D, Drain-to-Source Current (A)
-I D, Drain-to-Source Current (A)
VGS
TOP
-10V
-5.0V
-4.5V
-3.25V
-2.75V
-2.5V
-2.25V
BOTTOM -2.0V
10
TOP
VGS
-10V
-5.0V
-4.5V
-3.25V
-2.75V
-2.5V
-2.25V
-2.0V
BOTTOM
1
1
-2.0V
-2.0V
60µs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
-VDS , Drain-to-Source Voltage (V)
60µs PULSE WIDTH
Tj = 150°C
0.1
0.1
1
10
100
-V DS , Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
10
1.5
T J = 150°C
1
T J = 25°C
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = -0.56A
-I D, Drain-to-Source Current (A)
1.0
VDS = -25V
6
0µ
s PULSE WIDTH
15
0.1
1
1.5
2
2.5
3
-VGS, Gate-to-Source Voltage (V)
VGS = -4.5V
0.5
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
4
www.irf.com
Pre-Irradiation
IRHLA7970Z4, 2N7630M2
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
2
3
4
5
6
7
8
ID = -0.56A
RDS(on), Drain-to -Source On Resistance (
Ω)
RDS(on), Drain-to -Source On Resistance
(Ω)
4.0
2.2
2.0
1.8
1.6
1.4
T J = 25°C
1.2
1.0
Vgs = -4.5V
0.8
0
0.5
1.0
1.5
2.0
2.5
-I D, Drain Current (A)
T J = 150°C
T J = 150°C
T J = 25°C
9
10 11 12
-V GS, Gate -to -Source Voltage (V)
Fig 5.
Typical On-Resistance Vs
Gate Voltage
Fig 6.
Typical On-Resistance Vs
Drain Current
-V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
80
2.5
-V GS(th) Gate threshold Voltage (V)
ID = -1.0mA
2.0
70
1.5
1.0
60
ID = -50µA
0.5
ID = -250µA
ID = -1.0mA
ID = -150mA
-60 -40 -20
0
20
40
60
80 100 120 140 160
50
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
T J , Temperature ( °C )
T J , Temperature ( °C )
Fig 7.
Typical Drain-to-Source
Breakdown Voltage Vs Temperature
Fig 8.
Typical Threshold Voltage Vs
Temperature
www.irf.com
5
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
