Datasheet> 器件分类 > 晶体管> IRGCH70KE

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IRGCH70KE: 产品描述Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, DIE-2; 产品类别晶体管; 文件大小19KB，共1页; 制造商Infineon(英飞凌); 官网地址http://www.infineon.com/

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IRGCH70KE概述

Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, DIE-2

IRGCH70KE规格参数

参数名称	属性值
是否Rohs认证	不符合
厂商名称	Infineon(英飞凌)
包装说明	UNCASED CHIP, S-XUUC-N2
Reach Compliance Code	compliant
ECCN代码	EAR99
Is Samacsys	N
其他特性	ULTRA FAST SPEED
集电极-发射极最大电压	1200 V
配置	SINGLE WITH BUILT-IN CURRENT AND KELVIN SENSOR
JESD-30 代码	S-XUUC-N2
元件数量	1
端子数量	2
封装主体材料	UNSPECIFIED
封装形状	SQUARE
封装形式	UNCASED CHIP
峰值回流温度（摄氏度）	NOT SPECIFIED
极性/信道类型	N-CHANNEL
认证状态	Not Qualified
表面贴装	YES
端子形式	NO LEAD
端子位置	UPPER
处于峰值回流温度下的最长时间	NOT SPECIFIED
晶体管元件材料	SILICON
Base Number Matches	1

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PD-9.1419

TARGET

IRGCH70KE

IRGCH70KE IGBT Die in Wafer Form

1200 V

Size 7

Ultra-Fast Speed

5" Wafer

Electrical Characteristics ( Wafer Form )

Parameter

CE (on)

(BR)CES

GE(th)

CES

GES

Description

Collector-to-Emitter Saturation Voltage

Colletor-to-Emitter Breakdown Voltage

Gate Threshold Voltage

Zero Gate Voltage Collector Current

Gate-to-Emitter Leakage Current

Guaranteed (Min/Max)

Test Conditions

3.3V Max.

= 20A, T

= 25°C, V

= 15V

1200V Min.

= 25°C, I

CES

= 250µA, V

= 0V

3.0V Min., 6.0V Max.

= V

, T

=25°C, I

=250µA

250 µA Max.

= 25°C, V

= 1200V

500 nA Max.

= 25°C, V

= +/- 20V

Mechanical Data

Norminal Backmetal Composition, Thickness:

Norminal Front Metal Composition, Thickness:

Dimensions:

Wafer Diameter:

Wafer thickness:

Relevant Die Mechanical Dwg. Number

Minimum Street Width

Reject Ink Dot Size

Ink Dot Location

Recommended Storage Environment:

Cr-Ni-Ag ( 1kA-4kA-6kA )

99% Al, 1% Si (3 microns)

0.340" x 0.340"

125mm, with std. < 100 > flat

.015" + / -.003"

01-5153

100 Microns

0.25mm Diameter Minimum

See Die Outline drawing below

Store in original container, in dessicated

nitrogen, with no contamination

Die Outline

INK DO T

LO CATION

2.39

(.094 )

8.64

(.340 )

8.64

(.340 )

NO TES :

1. ALL DIM ENSIONS ARE S HO W N IN MILLIMET ERS ( INCHES )

2. CONTRO LLING DIMENSION : ( INCH )

3. LETTE R DES IGNA TIO N :

S = S OURCE

S K = SO URCE KE LVIN

G = GA TE

IS = CURRE NT SE NS E

4. DIMENS IO NA L TO LERANCES

BO NDING PADS : < 0.635 TO LERANCE = + /- 0.013

W IDT H

< (.0250 ) T OLERA NCE =+/- (.0005 )

> 0.635 TO LERANCE = +/- 0.025

LENG TH

> (.0250 ) TO LERANCE = + /- ( .0010 )

O VERALL DIE

< 1.270 TO LE RA NCE = +/- 0.102

W IDT H

< (.050 ) TO LERANCE = +/- (.004 )

> 0.635 T OLERA NCE = +/- 0.203

LENG TH

> ( .050 ) T OLERA NCE = +/- (.008 )

5. UNLESS O THERW IS E NO TED A LL DIE ARE GEN III

EMITTE R

1.42

(.056 )

1.35

(.053 )

IRGCH70KE相似产品对比

	IRGCH70KE
描述	Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, DIE-2
是否Rohs认证	不符合
厂商名称	Infineon(英飞凌)
包装说明	UNCASED CHIP, S-XUUC-N2
Reach Compliance Code	compliant
ECCN代码	EAR99
Is Samacsys	N
其他特性	ULTRA FAST SPEED
集电极-发射极最大电压	1200 V
配置	SINGLE WITH BUILT-IN CURRENT AND KELVIN SENSOR
JESD-30 代码	S-XUUC-N2
元件数量	1
端子数量	2
封装主体材料	UNSPECIFIED
封装形状	SQUARE
封装形式	UNCASED CHIP
峰值回流温度（摄氏度）	NOT SPECIFIED
极性/信道类型	N-CHANNEL
认证状态	Not Qualified
表面贴装	YES
端子形式	NO LEAD
端子位置	UPPER
处于峰值回流温度下的最长时间	NOT SPECIFIED
晶体管元件材料	SILICON
Base Number Matches	1

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