XP162A02D5PR
Power MOS FET
x
P-Channel Power MOS FET
x
DMOS Structure
x
Low On-State Resistance: 0.45Ω MAX
x
Ultra High-Speed Switching
x
SOT-89 Package
s
Applications
q
Notebook PCs
q
Cellular and portable phones
q
On-board power supplies
q
Li-ion battery systems
s
General Description
The XP162A02D5PR is a P-Channel Power MOS FET with low on-state
resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set
thereby saving energy.
The small SOT-89 package makes high density mounting possible.
s
Features
Low on-state resistance:
Rds(on)=0.45Ω(Vgs=-4.5V)
Rds(on)=0.8Ω(Vgs=-2.5V)
Ultra high-speed switching
Operational Voltage:
-2.5V
High density mounting:
SOT-89
u
s
Pin Configuration
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Pin Assignment
PIN
NUMBER
1
2
3
1
G
2
D
3
S
PIN
NAME
G
D
S
FUNCTION
Gate
Drain
Source
SOT-89
(TOP VIEW)
s
Equivalent Circuit
s
Absolute Maximum Ratings
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
SYMBOL
Vdss
Vgss
Id
Idp
Idr
Pd
Tch
Tstg
RATINGS
-20
±12
-1.5
-4.5
-1.5
2
150
-55~150
Ta=25:
UNITS
V
V
A
A
A
W
:
:
1
2
3
Continuous Channel
Power Dissipation (note)
Channel Temperature
Storage Temperature
P-Channel MOS FET
(1 device built-in)
Note: When implemented on a glass epoxy PCB
506
s
Electrical Characteristics
DC characteristics
PARAMETER
Drain Cut-off Current
Gate-Source Leakage Current
Gate-Source Cut-off Voltage
Drain-Source On-state
Resistance (note)
Forward Transfer Admittance
(note)
Body Drain Diode
Forward Voltage
Note: Effective during pulse test.
Ta=25:
SYMBOL
Idss
Igss
Vgs(off)
Rds(on)
Yfs
Vf
CONDITIONS
Vds=-20V, Vgs=0V
Vgs=±12V, Vds=0V
Id=-1mA, Vds=-10V
Id=-0.8A, Vgs=-4.5V
Id=-0.8A, Vgs=-2.5V
Id=-0.8A, Vds=-10V
If=-1.5A, Vgs=0V
MIN
TYP
MAX
-10
±1
-0.5
0.35
0.6
1.5
-1.1
-1.2
0.45
0.8
UNITS
µA
µA
V
Ω
Ω
S
V
Dynamic characteristics
PARAMETER
Input Capacitance
Output Capacitance
Feedback Capacitance
SYMBOL
Ciss
Coss
Crss
CONDITIONS
Vds=-10V, Vgs=0V
f=1MHz
MIN
TYP
180
100
35
MAX
Ta=25:
UNITS
pF
pF
pF
u
Switching characteristics
PARAMETER
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
SYMBOL
td (on)
tr
td (off)
tf
Vgs=-5V, Id=-0.8A
Vdd=-10V
CONDITIONS
MIN
TYP
10
15
20
30
MAX
Ta=25:
UNITS
ns
ns
ns
ns
Thermal characteristics
PARAMETER
Thermal Resistance
(channel-surroundings)
SYMBOL
Rth (ch-a)
CONDITIONS
Implement on a glass epoxy
resin PCB
MIN
TYP
62.5
MAX
UNITS
˚C/W
507
XP162A02D5PR
■ Electrical Characteristics
Drain Current vs. Drain /Source Voltage
-4.5
-4.0
-3.5
-4.5V
-4V
-3.5V
-2.5V
-3V
-5V
Power MOS FET
Drain Current vs. Gate/Source Voltage
-4.5
-4.0
-3.5
Toor＝25℃
パルステス , Vds＝-10V
ト
Pulse Test, Ta=25:
Drain Current:Id (A)
Drain Current:Id (A)
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
0
-3.0
-55℃
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
0
-1
-2
-3
-4
-5
125℃
-2V
Vgs＝-1.5V
-1
-2
-3
Drain/Source Voltage:Vds (V)
Gate/Source Voltage:Vgs (V)
Drain/Source On-State Resistance vs. Gate/Source Voltage
2.0
Pulse Test, Ta=25:
Drain/Source On-State Resistance vs. Drain Current
10
Pulse Test, Ta=25:
u
Drain /Source On-State Resistance
:Rds (on) (Ω)
1.5
Drain/Source On-State Resistance
:Rds (on) (Ω)
Vgs＝-2.5V
1
1.0
-1.5A
Id＝-0.8A
0.5
-4.5V
0.0
0
-2
-4
-6
-8
-10
0.1
0
-1
-2
-3
-4
-5
Gate/Source Voltage:Vgs (V)
Drain Current:Id (A)
Drain/Source On-State Resistance vs. Ambient Temp.
2.0
Pulse Test
Gate/Source Cut Off Voltage Variance vs. Ambient Temp.
0.6
Vds=-10V, Id=-1mA
Gate/Source Cut Off Voltage Variance
:Vgs (off) Variance (V)
150
Drain/Source On-State Resistance
:Rds (on) (Ω)
0.4
0.2
0.0
-0.2
1.5
Id＝-1.5A
1.0
Vgs＝-2.5V
0.5
-0.8A,-1.5A
-4.5V
0.0
-60
-30
0
30
60
90
120
-0.8A
-0.4
-0.6
-60
-30
0
30
60
90
120
150
Ambient Temperature:Topr (:)
Ambient Temperature:Topr (:)
508
■ Electrical Characteristics
Drain/Source Voltage vs. Capacitance
1000
Vgs=0V, f=1MHz
1000
Switching Time vs. Drain Current
Vgs=-5V, Vdd≒-10V, PW=10µsec. duty≦1%
tf
Capacitance:Ciss, Coss, Crss (pF)
Switching Time:t (ns)
Ciss
100
Coss
100
td
（off）
tr
10
td
（on）
Crss
10
0
-5
-10
-15
-20
1
-0.01
-0.1
-1
-10
Drain/Source Voltage:Vds (V)
Drain Current:Id (A)
Gate/Source Voltage vs. Gate Charge
-10
Vds=-10V, Id=-0.8A
Reverse Drain Current vs. Source/Drain Voltage
-4.5
-4.0
Pulse Test
Reverse Drain Current:Idr (A)
Gate/Source Voltage:Vgs (V)
-8
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-2.5V
-0.5
0.0
0,4.5V
Vgs＝-4.5A
u
-6
-4
-2
0
0
2
4
6
8
10
0
-0.2
-0.4
-0.6
-0.8
-1
Gate Charge:Qg (nc)
Source/Drain Voltage:Vsd (V)
Standardized Transition Thermal Resistance vs. Pulse Width
Standardized Transition Thermal Resistance:γs(t)
10
Rth (ch-a)=62.5˚C/W, (Implemented on a glass epoxy PCB)
1
Single Pulse
0.1
0.01
0.001
0.0001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width:PW (sec)
509
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