a
FEATURES
Very Low-Noise, 5 nV/÷Hz @ 1 kHz Max
Excellent Input Offset Voltage, 0.4 mV Max
Low Offset Voltage Drift, 2 V/ C Max
Very High Gain, 1000 V/mV Min
Outstanding CMR, 110 dB Min
Slew Rate, 2 V/ s Typ
Gain-Bandwidth Product, 6 MHz Typ
Industry Standard Quad Pinouts
Available in Die Form
GENERAL DESCRIPTION
Very Low Noise Quad
Operational Amplifier
OP470
The OP470 offers excellent amplifier matching which is important
for applications such as multiple gain blocks, low noise instrumen-
tation amplifiers, quad buffers, and low noise active filters.
The OP470 conforms to the industry standard 14-pin DIP pinout.
It is pin compatible with the LM148/149, HA4741, HA5104,
and RM4156 quad op amps and can be used to upgrade systems
using these devices.
For higher speed applications, the OP471, with a slew rate of
8 V/ms, is recommended.
PIN CONNECTIONS
14–Lead Hermetic Dip
(Y–Suffix)
14–Lead Plastic Dip
(P–Suffix)
OUT A
–IN A
+IN A
V+
+IN B
–IN B
OUT B
OUT D
–IN D
+IN D
V–
+IN C
–IN C
OUT C
The OP470 is a high-performance monolithic quad operational
amplifier with exceptionally low voltage noise, 5 nV/X/ Hz at
1 kHz Max, offering comparable performance to ADI’s industry
standard OP27.
The OP470 features an input offset voltage below 0.4 mV,
excellent for a quad op amp, and an offset drift under 2
mV/∞C,
guaranteed over the full military temperature range. Open loop
gain of the OP470 is over 1,000,000 into a 10 kW load ensuring
excellent gain accuracy and linearity, even in high gain applica-
tions. Input bias current is under 25 nA, which reduces errors
due to signal source resistance. The OP470’s CMR of over
110 dB and PSRR of less than 1.8
mV/V
significantly reduce
errors due to ground noise and power supply fluctuations.
Power consumption of the quad OP470 is half that of four
OP27s, a significant advantage for power conscious applica-
tions. The OP470 is unity-gain stable with a gain bandwidth
product of 6 MHz and a slew rate of 2 V/ms.
16–Lead SOIC Package
(R–Suffix)
OUT A
1
–IN A
2
16
OUT D
15
–IN D
14
+IN D
1
2
3
4
5
6
7
14
13
12
+IN A
3
V+
4
+IN B
5
–IN B
6
OUT B
7
NC
8
OP470
13
V–
12
+IN C
11
–IN C
10
OUT C
9
OP470
11
10
9
8
NC
NC = NO CONNECT
SIMPLIFIED SCHEMATIC
V+
BIAS
–IN
+IN
V–
REV. A
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700
www.analog.com
Fax: 781/326-8703
© Analog Devices, Inc., 2002
OP470–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
(at V =
S
15 V, T
A
= 25 C, unless otherwise noted.)
OP470A/E
OP470F
OP470G
Parameter
INPUT OFFSET
VOLTAGE
INPUT OFFSET
CURRENT
INPUT BIAS
CURRENT
INPUT NOISE
VOLTAGE
INPUT NOISE
Voltage Density
Symbol Conditions
V
OS
I
OS
I
B
e
np-p
V
CM
= 0 V
V
CM
= 0 V
0.1 Hz to 10 Hz
(Note 1)
f
O
= 10 Hz
f
O
= 100 Hz
f
O
= 1 kHz
(Note 2)
f
O
= 10 Hz
f
O
= 100 Hz
f
O
= 1 kHz
V =
±
10 V
R
L
= 10 kW
R
L
= 2 kW
(Note 3)
R
L
≥
2 kW
V
CM
=
±
11 V
V
S
=
±
4.5 V to
±
18 V
Min Typ Max
0.1
3
6
80
3.8
3.3
3.2
1.7
0.7
0.4
1000 2300
500 1200
±
11
±
12
110
±
12
±
13
125
0.56 1.8
1.4
2
9
6
125
155
11
0.4
10
25
200
6.5
5.5
5.0
Min Typ Max
0.2
6
15
80
3.8
3.3
3.2
1.7
0.7
0.4
800 1700
400 900
±
11
±
12
±
12
±
13
100 120
1.0
1.4
2
9
6
125 155
11
5.6
0.8
20
50
200
6.5
5.5
5.0
Min Typ Max
0.4
12
25
80
3.8
3.3
3.2
1.7
07
0.4
800 1700
400 900
±
11
±
12
±
12
±
13
100 120
1.0
1.4
2
9
6
125 155
11
5.6
1.0
30
60
200
6.5
5.5
5.0
Unit
mV
nA
nA
nVp–p
e
n
nV÷Hz
INPUT NOISE
Current Density
LARGE-SIGNAL
Voltage Gain
INPUT VOLTAGE
RANGE
OUTPUT VOLTAGE
SWING
COMMON-MODE
REJECTION
POWER SUPPLY
Rejection Ratio
SLEW RATE
SUPPLY CURRENT
(All Amplifiers)
GAIN BANDWIDTH
PRODUCT
CHANNEL
SEPARATION
INPUT
CAPACITANCE
INPUT RESISTANCE
Differential-Mode
INPUT RESISTANCE
Common-Mode
SETTLING TIME
NOTES
1
Guaranteed but not 100% tested
2
Sample tested
3
Guaranteed by CMR test
i
n
pA÷Hz
A
VO
V/mV
IVR
V
O
CMR
PSRR
SR
I
SY
GBW
CS
V
V
dB
mV/V
V/ms
mA
MHz
dB
No Load
A
V
= 10
V
O
= 20 V
p-p
f
O
= 10 Hz (Note 1)
C
IN
R
IN
2
0.4
2
0.4
2
0.4
pF
MW
R
INCM
t
S
A
V
= 1
to 0.1%
to 0.01 %
11
5.5
6.0
11
5.5
6.0
11
5.5
6.0
GW
ms
–2–
REV. A
OP470
ELECTRICAL CHARACTERISTICS
Parameter
INPUT OFFSET VOLTAGE
AVERAGE INPUT
Offset Voltage Drift
INPUT OFFSET CURRENT
INPUT BIAS CURRENT
LARGE-SIGNAL
Voltage Gain
INPUT VOLTAGE RANGE
*
OUTPUT VOLTAGE SWING
COMMON-MODE
REJECTION
POWER SUPPLY
REJECTION RATIO
SUPPLY CURRENT
(All Amplifiers)
NOTE
*
Guaranteed by CMR test
(at V
S
=
15 V, –55 C
£
T
A
£
125 C for OP470A, unless otherwise noted.)
OP470A
Min
Typ
0.14
0.4
Max
0.6
2
20
20
Unit
mV
mV/∞C
nA
nA
V/mV
V
V
dB
5.6
11
mV/V
mA
Symbol
V
OS
TCV
OS
I
OS
I
B
A
VO
IVR
V
O
CMR
PSRR
I
SY
Conditions
V
CM
= 0 V
V
CM
= 0 V
V
O
=
±
10 V
R
L
= 10 kW
R
L
= 2 kW
R
L
≥
2 kW
V
CM
=
±
11 V
V
S
=
±
4.5 V to
±
18 V
No Load
—
750
400
±
11
±
12
100
5
15
1600
800
±
12
±
13
120
1.0
9.2
ELECTRICAL CHARACTERISTICS
Parameter
INPUT OFFSET
VOLTAGE
AVERAGE INPUT
Offset Voltage Drift
INPUT OFFSET
CURRENT
INPUT BIAS
CURRENT
LARGE-SIGNAL
Voltage Gain
INPUT VOLTAGE
RANGE
*
OUTPUT VOLTAGE
SWING
COMMON-MODE
REJECTION
POWER SUPPLY
Rejection Ratio
SUPPLY CURRENT
(All Amplifiers)
NOTE
*
Guaranteed by CMR test
(at V
s
= 15 V, –25 C
£
T
A
£
85 C for OP470E/OP470EF, –40 C
£
T
A
£
85 C for OP470G,
unless otherwise noted.)
OP470E
OP470F
OP470G
Symbol Conditions
V
OS
TCV
OS
I
OS
I
B
A
VO
V
CM
= 0 V
V
CM
= 0 V
V
O
=
±
10 V
R
L
= 10 kW
R
L
= 2 kW
Min Typ Max
0.12 0.5
0.4
4
11
800
400
±
11
1800
900
±
12
±
13
120
0.7
5.6
2
20
50
Min Typ Max
0.24 1.0
0.6
7
20
600 1400
300 700
±
11
±
12
±
12
±
13
90
115
1.8
10
4
40
70
Min Typ Max
0.5
2
20
40
600 1500
300 800
±
11
±
12
±
12
±
13
90
110
1.8
10
50
75
1.5
Unit
mV
mV/∞C
nA
nA
V/mV
IVR
V
O
CMR
PSRR
R
L
≥
2 kW
V
CM
=
±
11 V
V
S
=
±
4.5 V to
±
18 V
V
V
dB
mV/V
±
12
100
I
SY
No Load
—
9.2
11
—
9.2
11
—
9.3
11
mA
REV. A
–3–
OP470–SPECIFICATIONS
WAFER TEST LIMITS
(at V =
s
15 V, 25 C, unless otherwise noted.)
OP470GBC
Parameter
INPUT OFFSET VOLTAGE
INPUT OFFSET CURRENT
INPUT BIAS CURRENT
LARGE-SIGNAL
Voltage Gain
INPUT VOLTAGE RANGE
*
OUTPUT VOLTAGE SWING
COMMON-MODE
REJECTION
POWER SUPPLY
REJECTION RATIO
SUPPLY CURRENT
(All Amplifiers)
Symbol
V
OS
I
OS
I
B
A
VO
IVR
V
O
CMR
PSRR
I
SY
Conditions
V
CM
= 0 V
V
CM
= 0 V
V
O
=
±
10 V
R
L
= 10 kW
R
L
= 2 kW
R
L
≥
2 kW
V
CM
=
±
11 V
V
S
=
±
4.5 V to
±
18 V
No Load
Limit
0.8
20
50
800
400
±
11
±
12
100
5.6
11
Unit
mV MAX
nA MAX
nA MIN
V/mV MIN
V MIN
V MIN
dB
mV/V
MAX
mA MAX
NOTE
*
Guaranteed by CMR test
Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaran-
teed for standard product dice. Consult factory to negotiate specifications based on dice lot qualification through sample lot assembly and testing.
–4–
REV. A
OP470
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±
18 V
Differential Input Voltage
2
. . . . . . . . . . . . . . . . . . . . . .
±
1.0 V
Differential Input Current
2
. . . . . . . . . . . . . . . . . . . .
±
25 mA
Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . Supply Voltage
Output Short-Circuit Duration . . . . . . . . . . . . . . . Continuous
Storage Temperature Range
P, Y Package . . . . . . . . . . . . . . . . . . . . . . –65∞C to +150∞C
Lead Temperature Range (Soldering 60 sec) . . . . . . . . . 300∞C
Junction Temperature (T
j
) . . . . . . . . . . . . . –65∞C to +150∞C
Operating Temperature Range
OP470A . . . . . . . . . . . . . . . . . . . . . . . . . –55∞C to +125∞C
OP470E, OP470F . . . . . . . . . . . . . . . . . . . –25∞C to +85∞C
OP470G . . . . . . . . . . . . . . . . . . . . . . . . . . –40∞C to +85∞C
ORDERING GUIDE
ABSOLUTE MAXIMUM RATINGS
1
Package Type
3
jA
jc
Unit
∞C/W
∞C/W
∞C/W
14-Lead Hermetic DIP(Y) 94
14-Lead Plastic DiP(P)
16-Lead SOL (S)
76
88
10
33
23
NOTES
1
Absolute Maximum Ratings apply to both DICE and packaged parts, unless
otherwise noted.
2
The OP470’s inputs are protected by back-to-back diodes. Current limiting
resistors are not used in order to achieve low noise performance. If differential
voltage exceeds
±
1.0 V, the input current should be limited to
±
25 mA.
3
jA
is specified for worst case mounting conditions, i.e.,
jA
is specified for device
in socket for TO, CerDIP, PDIP, packages;
jA
is specified for device soldered to
printed circuit board for SO packages.
+IN B
V+
+IN A
Package Options
TA = 25∞C
V
OS
MAX
( V)
400
400
400
800
1000
1000
Cerdip
14-Pin
OP470AY*
OP470EY
OP470FY*
OP470GP
OP470GS
Operating
Temperature
Range
MIL
MIL
IND
IND
XIND
XIND
–IN B
–IN A
Plastic
OUT B
OUT A
OUT C
OUT D
–IN D
*Not
for new design; obsolete April 2002.
For military processed devices, please refer to the standard
Microcircuit Drawing (SMD) available at
www.dscc.dla.mil/programs/milspec/default.asp
SMD Part Number
59628856501CA
596288565012A
596288565013A
*
*
Not for new designs; obsolete April 2002.
–IN C +IN C
V–
+IN D
DIE SIZE 0.163 0.106 INCH, 17,278 SQ. mm
(4.14 2.69 mm, 11.14 SQ. mm)
ADI Equivalent
OP470AYMDA
OP470ARCMDA
OP470ATCMDA
Figure 1. Dice Characteristics
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although
the OP470 features proprietary ESD protection circuitry, permanent damage may occur on devices
subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions are
recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
REV. A
–5–
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