85EPF.. Soft Recovery Series
Vishay High Power Products
Fast Soft Recovery
(Rectifier Diode), 85 A
FEATURES
Base cathode
2
• Output rectification and freewheeling
inverters, choppers and converters
in
RoHS
COMPLIANT
• Input rectifications where severe restrications on
conducted EMI should be met
• Lead (Pb)-free
1
Anode
3
Anode
• Designed and qualified for industrial level
DESCRIPTION
PRODUCT SUMMARY
I
F(RMS)
V
F
at 100 A
t
rr
V
RRM
160 A
< 1.4 V
95 ns
800 to 1200 V
The 85EPF.. fast soft recovery rectifier series has been
optimized for combined short reverse recovery time and low
forward voltage drop.
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
Available in the new PowerTab
TM
package, this new series is
suitable for a large range of applications combining excellent
die to footprint ratio and sturdeness connectivity for use in
high current environments.
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
F(AV)
I
F(RMS)
V
RRM
I
FSM
V
F
t
rr
T
J
100 A, T
J
= 25 °C
1 A, - 100 A/µs
Range
Range
TEST CONDITIONS
Rect. conduction 50 % duty cycle at T
C
= 85 °C
VALUES
85
160
800 to 1200
(1)
110
1.4
95
- 40 to 150
V
A
V
ns
°C
UNITS
A
Note
(1)
For higher voltage up to 1600 V contact factory
VOLTAGE RATINGS
TYPE NUMBER
V
RRM
, MAXIMUM PEAK
REVERSE VOLTAGE
V
800
1000
1200
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
900
1100
1300
15
I
RRM
AT 150 °C
mA
85EPF08
85EPF10
85EPF12
Document Number: 93159
Revision: 18-Apr-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
1
85EPF.. Soft Recovery Series
Vishay High Power Products
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
Maximum I
2
t for fusing
Maximum I
2
√t
for fusing
SYMBOL
I
F(AV)
I
FSM
I
2
t
I
2
√t
TEST CONDITIONS
T
C
= 85 °C, 180° conduction half sine wave
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
t = 0.1 to 10 ms, no voltage reapplied
VALUES
85
1100
1250
5000
7000
70 000
A
2
s
A
2
√s
A
UNITS
Fast Soft Recovery
(Rectifier Diode), 85 A
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
Maximum reverse leakage current
SYMBOL
V
FM
r
t
V
F(TO)
I
RM
TEST CONDITIONS
85 A, T
J
= 25 °C
T
J
= 150 °C
T
J
= 25 °C
T
J
= 150 °C
VALUES
1.36
4.03
0.87
V
R
= Rated V
RRM
0.1
15
UNITS
V
mΩ
V
mA
RECOVERY CHARACTERISTICS
PARAMETER
Reverse recovery time
Reverse recovery current
Reverse recovery charge
Snap factor
SYMBOL
t
rr
I
rr
Q
rr
S
TEST CONDITIONS
I
F
at 85 Apk
25 A/µs
25 °C
VALUES
480
7.1
2.1
0.5
UNITS
ns
A
µC
dir
dt
I
FM
t
a
t
rr
t
b
Q
rr
I
RM(REC)
t
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
junction to ambient
Typical thermal resistance,
case to heatsink
Approximate weight
minimum
maximum
Case style PowerTab
TM
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
R
thCS
Mounting surface, smooth and greased
DC operation
TEST CONDITIONS
VALUES
- 40 to 150
0.35
40
0.2
6
0.21
6 (5)
12 (10)
g
oz.
kgf · cm
(lbf · in)
85EPF12
°C/W
UNITS
°C
Mounting torque
Marking device
www.vishay.com
2
For technical questions, contact: diodes-tech@vishay.com
Document Number: 93159
Revision: 18-Apr-08
85EPF.. Soft Recovery Series
Fast Soft Recovery
(Rectifier Diode), 85 A
150
Maximum Allowable Case Temperature (°C)
140
130
120
110
100
90
80
30°
70
0
10
20
30
40
50
60
70
80
90
Average Forward Current (A)
60°
90°
180°
120°
Conduction Angle
Vishay High Power Products
Maximum Average Forward Power Loss (W)
85EPF.. Series
R
thJC
(DC) = 0.35 K/W
200
180
160
140
120
DC
180°
120°
90°
60°
30°
100 RMS Limit
80
60
40
20
0
0
20
40
60
80
100
120
140
Average Forward Current (A)
Conduction Period
85EPF.. Series
T
J
= 150°C
Fig. 1 - Current Rating Characteristics
Fig. 4 - Forward Power Loss Characteristics
150
Maximum Allowable Case Temperature (°C)
140
130
120
110
100
90
80
70
0
20
40
30°
Peak Half Sine Wave Forward Current (A)
85EPF.. Series
R
thJC
(DC) = 0.35 K/W
1200
1100
1000
900
800
700
600
500
400
300
1
At Any Rated Load Condition And With
Rated V
RRM
Applied Following Surge.
Initial T
J
= 150°C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
Conduction Period
90°
60°
60
120°
80
180°
100
DC
85EPF.. Series
120
140
10
100
Average Forward Current (A)
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 2 - Current Rating Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
160
Maximum Average Forward Power Loss (W)
Peak Half Sine Wave Forward Current (A)
140
120
100
80
60
Conduction Angle
1400
180°
120°
90°
60°
30°
RMS Limit
1300
1200
1100
1000
900
800
700
600
500
400
300
0.01
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial T
J
= 150°C
No Voltage Reapplied
Rated V
RRM
Reapplied
40
20
0
0
10
20
30
40
50
60
70
80
90
Average Forward Current (A)
85EPF.. Series
T
J
= 150°C
85EPF.. Series
0.1
Pulse Train Duration (s)
1
Fig. 3 - Forward Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
Document Number: 93159
Revision: 18-Apr-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
3
85EPF.. Soft Recovery Series
Vishay High Power Products
Fast Soft Recovery
(Rectifier Diode), 85 A
4
Maximum Reverse Recovery Charge - Qrr (µC)
3.5
3
2.5
2
1.5
1
0.5
0
0
40
80
120
160
200
Rate Of Fall Of Forward Current - di/dt (A/µs)
10 A
1000
Instantaneous Forward Current (A)
85EPF.. Series
T
J
= 25°C
I
FM
= 125 A
80 A
40 A
20 A
100
T
J
= 25°C
10
T
J
= 150°C
85EPF.. Series
1
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
Instantaneous Forward Voltage (V)
1A
Fig. 7 - Forward Voltage Drop Characteristics
Fig. 10 - Recovery Charge Characteristics, T
J
= 25 °C
Maximum Reverse Recovery Time - Trr (µs)
0.22
14
Maximum Reverse Recovery Charge - Qrr (µC)
0.2
0.18
0.16
0.14
0.12
0.1
0.08
0.06
0.04
0
40
80
120
85EPF.. Series
T
J
= 25°C
I
FM
= 125 A
80 A
40 A
12
10
8
6
4
2
85EPF.. Series
T
J
= 150°C
I
FM
= 80 A
20 A
40 A
20 A
10 A
10 A
1A
1A
0
0
40
80
120
160
200
Rate Of Fall Of Forward Current - di/dt (A/µs)
160
200
Rate Of Fall Of Forward Current - di/dt (A/µs)
Fig. 8 - Recovery Time Characteristics, T
J
= 25 °C
Fig. 11 - Recovery Charge Characteristics, T
J
= 150 °C
Maximum Reverse Recovery Time - Trr (µs)
0.6
Maximum Reverse Recovery Current - Irr (A)
0.5
0.4
40 A
22
85EPF.. Series
T
J
= 150°C
I
FM
= 80 A
20
18
16
14
12
10
8
6
4
2
0
0
85EPF.. Series
T
J
= 25°C
I
FM
= 125 A
80 A
40 A
20 A
0.3
0.2
20 A
10 A
10 A
1A
0.1
0
0
40
80
120
160
200
Rate Of Fall Of Forward Current - di/dt (A/µs)
1A
40
80
120
160
200
Rate Of Fall Of Forward Current - di/dt (A/µs)
Fig. 9 - Recovery Time Characteristics, T
J
= 150 °C
Fig. 12 - Recovery Current Characteristics, T
J
= 25 °C
www.vishay.com
4
For technical questions, contact: diodes-tech@vishay.com
Document Number: 93159
Revision: 18-Apr-08
85EPF.. Soft Recovery Series
Fast Soft Recovery
(Rectifier Diode), 85 A
Vishay High Power Products
45
Maximum Reverse Recovery Current - Irr (A)
40
35
40 A
85EPF.. Series
T
J
= 150°C
I
FM
= 80 A
30
25
20
15
10
1A
20 A
10 A
5
0
0
40
80
120
160
200
Rate Of Fall Of Forward Current - di/dt (A/µs)
Fig. 13 - Recovery Current Characteristics, T
J
= 150 °C
1
thJC
(K/W)
Steady State Value
(DC Operation)
Transient Thermal Impedance Z
0.1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Single Pulse
85EPF.. Series
0.01
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 14 - Thermal Impedance Z
thJC
Characteristics
Document Number: 93159
Revision: 18-Apr-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
5
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