Schottky Barrier Diodes (SBD)
MA2SD32
Silicon epitaxial planar type
Unit: mm
For super high speed switching
■
Features
•
I
F(AV)
= 200 mA rectification is possible.
•
Small reverse current: I
R
<
5
µA
(at V
R
= 30 V)
0.80
±0.05
0.60
+0.05
–0.03
0.80
+0.05
–0.03
1
(0.60)
0.12
+0.05
–0.02
(0.80)
(0.60)
0.01
±0.01
5˚
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Reverse voltage
Repetitive peak reverse voltage
Forward current (Average)
Peak forward current
Non-repetitive peak forward
surge current
*
Junction temperature
Storage temperature
Symbol
V
R
V
RRM
I
F(AV)
I
FM
I
FSM
T
j
T
stg
Rating
30
30
200
300
1
125
−55
to
+125
Unit
V
V
5˚
2
0.30
±0.05
0
+0
–0.05
0.01
±0.01
mA
mA
A
°C
°C
1: Anode
2: Cathode
SSMini2-F1 Package
Marking Symbol: 8H
Note) * : The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Reverse current
Symbol
I
R1
I
R2
Forward voltage
Terminal capacitance
Reverse recovery time
*
V
F
C
t
t
rr
V
R
=
10 V
V
R
=
30 V
I
F
=
200 mA
V
R
=
0 V, f
=
1 MHz
I
F
=
I
R
=
100 mA
I
rr
=
10 mA, R
L
=
100
Ω
0.49
25
2
Conditions
Min
Typ
Max
0.5
5
0.56
V
pF
ns
Unit
µA
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 250 MHz
4. *: t
rr
measurement circuit
Bias Application Unit (N-50BU)
t
r
Input Pulse
t
p
10%
t
I
F
Output Pulse
t
rr
t
I
rr
=
10 mA
I
F
=
100 mA
I
R
=
100 mA
R
L
=
100
Ω
Pulse Generator
(PG-10N)
R
s
=
50
Ω
A
Wave Form
Analyzer
(SAS-8130) V
R
R
i
=
50
Ω
90%
t
p
=
2
µs
t
r
=
0.35 ns
δ =
0.05
Publication date: October 2003
SKH00132AED
(0.15)
1.20
+0.05
–0.03
1.60
±0.05
1
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general elec-
tronic equipment (such as office equipment, communications equipment, measuring instruments and house-
hold appliances).
Consult our sales staff in advance for information on the following applications:
•
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-
tion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
body.
•
Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica-
tions satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-
ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent
physical injury, fire, social damages, for example, by using the products.
(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life
and amount of time let standing of unsealed items) agreed upon when specification sheets are individually
exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP
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