Dual-Port SRAM, 2KX9, 45ns, CMOS, PQCC52, 0.750 X 0.750 INCH, 0.170 INCH HEIGHT, PLASTIC, LCC-52
| 参数名称 | 属性值 |
| 是否无铅 | 含铅 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | IDT (Integrated Device Technology) |
| 零件包装代码 | LCC |
| 包装说明 | QCCJ, LDCC52,.8SQ |
| 针数 | 52 |
| Reach Compliance Code | not_compliant |
| ECCN代码 | EAR99 |
| 最长访问时间 | 45 ns |
| I/O 类型 | COMMON |
| JESD-30 代码 | S-PQCC-J52 |
| JESD-609代码 | e0 |
| 长度 | 19.1262 mm |
| 内存密度 | 18432 bit |
| 内存集成电路类型 | DUAL-PORT SRAM |
| 内存宽度 | 9 |
| 湿度敏感等级 | 1 |
| 功能数量 | 1 |
| 端口数量 | 2 |
| 端子数量 | 52 |
| 字数 | 2048 words |
| 字数代码 | 2000 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 70 °C |
| 最低工作温度 | |
| 组织 | 2KX9 |
| 输出特性 | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | QCCJ |
| 封装等效代码 | LDCC52,.8SQ |
| 封装形状 | SQUARE |
| 封装形式 | CHIP CARRIER |
| 并行/串行 | PARALLEL |
| 峰值回流温度（摄氏度） | 225 |
| 电源 | 5 V |
| 认证状态 | Not Qualified |
| 座面最大高度 | 4.57 mm |
| 最大待机电流 | 0.015 A |
| 最小待机电流 | 2 V |
| 最大压摆率 | 0.245 mA |
| 最大供电电压 (Vsup) | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | YES |
| 技术 | CMOS |
| 温度等级 | COMMERCIAL |
| 端子面层 | Tin/Lead (Sn85Pb15) |
| 端子形式 | J BEND |
| 端子节距 | 1.27 mm |
| 端子位置 | QUAD |
| 处于峰值回流温度下的最长时间 | 30 |
| 宽度 | 19.1262 mm |
| Base Number Matches | 1 |
| 70125S45J | 70125L45J | 70125S35JI | 70121L45J | 70121S35JI | 70121S45J | |
|---|---|---|---|---|---|---|
| 描述 | Dual-Port SRAM, 2KX9, 45ns, CMOS, PQCC52, 0.750 X 0.750 INCH, 0.170 INCH HEIGHT, PLASTIC, LCC-52 | Dual-Port SRAM, 2KX9, 45ns, CMOS, PQCC52, 0.750 X 0.750 INCH, 0.170 INCH HEIGHT, PLASTIC, LCC-52 | Dual-Port SRAM, 2KX9, 35ns, CMOS, PQCC52, 0.750 X 0.750 INCH, 0.170 INCH HEIGHT, PLASTIC, LCC-52 | Dual-Port SRAM, 2KX9, 45ns, CMOS, PQCC52, 0.750 X 0.750 INCH, 0.170 INCH HEIGHT, PLASTIC, LCC-52 | Dual-Port SRAM, 2KX9, 35ns, CMOS, PQCC52, 0.750 X 0.750 INCH, 0.170 INCH HEIGHT, PLASTIC, LCC-52 | Dual-Port SRAM, 2KX9, 45ns, CMOS, PQCC52, 0.750 X 0.750 INCH, 0.170 INCH HEIGHT, PLASTIC, LCC-52 |
| 是否无铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| 厂商名称 | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) |
| 零件包装代码 | LCC | LCC | LCC | LCC | LCC | LCC |
| 包装说明 | QCCJ, LDCC52,.8SQ | QCCJ, LDCC52,.8SQ | QCCJ, LDCC52,.8SQ | QCCJ, LDCC52,.8SQ | QCCJ, LDCC52,.8SQ | QCCJ, LDCC52,.8SQ |
| 针数 | 52 | 52 | 52 | 52 | 52 | 52 |
| Reach Compliance Code | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 最长访问时间 | 45 ns | 45 ns | 35 ns | 45 ns | 35 ns | 45 ns |
| I/O 类型 | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
| JESD-30 代码 | S-PQCC-J52 | S-PQCC-J52 | S-PQCC-J52 | S-PQCC-J52 | S-PQCC-J52 | S-PQCC-J52 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 |
| 长度 | 19.1262 mm | 19.1262 mm | 19.1262 mm | 19.1262 mm | 19.1262 mm | 19.1262 mm |
| 内存密度 | 18432 bit | 18432 bit | 18432 bit | 18432 bit | 18432 bit | 18432 bit |
| 内存集成电路类型 | DUAL-PORT SRAM | DUAL-PORT SRAM | DUAL-PORT SRAM | DUAL-PORT SRAM | DUAL-PORT SRAM | DUAL-PORT SRAM |
| 内存宽度 | 9 | 9 | 9 | 9 | 9 | 9 |
| 湿度敏感等级 | 1 | 1 | 1 | 1 | 1 | 1 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端口数量 | 2 | 2 | 2 | 2 | 2 | 2 |
| 端子数量 | 52 | 52 | 52 | 52 | 52 | 52 |
| 字数 | 2048 words | 2048 words | 2048 words | 2048 words | 2048 words | 2048 words |
| 字数代码 | 2000 | 2000 | 2000 | 2000 | 2000 | 2000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 70 °C | 70 °C | 85 °C | 70 °C | 85 °C | 70 °C |
| 组织 | 2KX9 | 2KX9 | 2KX9 | 2KX9 | 2KX9 | 2KX9 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | QCCJ | QCCJ | QCCJ | QCCJ | QCCJ | QCCJ |
| 封装等效代码 | LDCC52,.8SQ | LDCC52,.8SQ | LDCC52,.8SQ | LDCC52,.8SQ | LDCC52,.8SQ | LDCC52,.8SQ |
| 封装形状 | SQUARE | SQUARE | SQUARE | SQUARE | SQUARE | SQUARE |
| 封装形式 | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 峰值回流温度（摄氏度） | 225 | 225 | 225 | 225 | 225 | 225 |
| 电源 | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 座面最大高度 | 4.57 mm | 4.57 mm | 4.57 mm | 4.57 mm | 4.57 mm | 4.57 mm |
| 最大待机电流 | 0.015 A | 0.015 A | 0.005 A | 0.005 A | 0.015 A | 0.015 A |
| 最小待机电流 | 2 V | 2 V | 2 V | 2 V | 2 V | 2 V |
| 最大压摆率 | 0.245 mA | 0.205 mA | 0.21 mA | 0.205 mA | 0.275 mA | 0.245 mA |
| 最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | YES | YES | YES | YES | YES | YES |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | COMMERCIAL | COMMERCIAL | INDUSTRIAL | COMMERCIAL | INDUSTRIAL | COMMERCIAL |
| 端子面层 | Tin/Lead (Sn85Pb15) | Tin/Lead (Sn85Pb15) | Tin/Lead (Sn85Pb15) | Tin/Lead (Sn85Pb15) | Tin/Lead (Sn85Pb15) | Tin/Lead (Sn85Pb15) |
| 端子形式 | J BEND | J BEND | J BEND | J BEND | J BEND | J BEND |
| 端子节距 | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm |
| 端子位置 | QUAD | QUAD | QUAD | QUAD | QUAD | QUAD |
| 处于峰值回流温度下的最长时间 | 30 | 30 | 30 | 30 | 30 | 30 |
| 宽度 | 19.1262 mm | 19.1262 mm | 19.1262 mm | 19.1262 mm | 19.1262 mm | 19.1262 mm |
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