New OptiMOS™ Fast Diode (FD), Infineon’s latest generation of power MOSFETs in 200V, 250V and 300V is optimized for body diode hard commutation. The new devices are the perfect choice for hard switching applications such as telecom, industrial power supplies, Class D audio amplifiers, motor control and DC-AC inverter.
BSC13DN30NSFD | BSC13DN30NSFDATMA1 | |
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描述 | New OptiMOS™ Fast Diode (FD), Infineon’s latest generation of power MOSFETs in 200V, 250V and 300V is optimized for body diode hard commutation. The new devices are the perfect choice for hard switching applications such as telecom, industrial power supplies, Class D audio amplifiers, motor control and DC-AC inverter. | 漏源电压(Vdss):300V 连续漏极电流(Id)(25°C 时):16A(Tc) 栅源极阈值电压:4V @ 90uA 漏源导通电阻:130mΩ @ 16A,10V 最大功率耗散(Ta=25°C):150W(Tc) 类型:N沟道 N沟道,300V,16A,130mΩ@10V |
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