PD - 96231
IRLB8748PbF
Applications
l
l
l
HEXFET
®
Power MOSFET
Optimized for UPS/Inverter Applications
High Frequency Synchronous Buck
Converters for Computer Processor Power
High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial use
V
DSS
30V
R
DS(on)
max
4.8m
:
D
Qg
15nC
G
D
S
Benefits
l
Very Low RDS(on) at 4.5V V
GS
l
Ultra-Low Gate Impedance
l
Fully Characterized Avalanche Voltage
and Current
l
Lead-Free
TO-220AB
IRLB8748PbF
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
C
= 100°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Package Limited)
Pulsed Drain Current
Max.
30
± 20
92
Units
V
f
65
78
370
75
38
0.5
-55 to + 175
A
h
Maximum Power Dissipation
h
Maximum Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
c
W
W/°C
°C
i
300 (1.6mm from case)
10 lbf
in (1.1N m)
y
y
Thermal Resistance
R
θJC
R
θCS
R
θJA
Junction-to-Case
h
g
Parameter
Typ.
–––
0.5
–––
Max.
2.0
–––
62
Units
°C/W
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
Notes
through
are on page 9
www.irf.com
1
04/22/09
IRLB8748PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
/∆T
J
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
E
AS
I
AR
E
AR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Min. Typ. Max. Units
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
196
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
21
3.8
5.5
1.8
-7.1
–––
–––
–––
–––
–––
15
3.6
2.2
5.9
3.9
8.1
11
2.0
14
96
16
34
2139
464
199
–––
–––
4.8
V
Conditions
V
GS
= 0V, I
D
= 250µA
mV/°C Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 40A
mΩ
6.8
V
GS
= 4.5V, I
D
= 32A
2.35
V
V
DS
= V
GS
, I
D
= 50µA
––– mV/°C
V
DS
= 24V, V
GS
= 0V
1.0
µA
150
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
100
V
GS
= 20V
nA
-100
V
GS
= -20V
–––
S V
DS
= 15V, I
D
= 32A
e
e
23
–––
–––
–––
–––
–––
–––
3.5
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
nC
Ω
ns
nC
V
DS
= 15V
V
GS
= 4.5V
I
D
= 32A
V
DS
= 16V, V
GS
= 0V
V
DD
= 15V, V
GS
= 4.5V
I
D
= 32A
R
G
= 1.8Ω
V
GS
= 0V
V
DS
= 15V
ƒ = 1.0MHz
Max.
114
32
7.5
Units
mJ
A
mJ
e
pF
Avalanche Characteristics
Ã
d
–––
–––
–––
–––
–––
–––
–––
–––
23
39
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
92
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 32A, V
GS
= 0V
T
J
= 25°C, I
F
= 32A, V
DD
= 15V
di/dt = 200A/µs
f
A
Ã
370
1.0
35
59
V
ns
nC
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRLB8748PbF
1000
TOP
VGS
10V
9.0V
7.0V
5.5V
4.5V
4.0V
3.5V
3.0V
1000
TOP
VGS
10V
9.0V
7.0V
5.5V
4.5V
4.0V
3.5V
3.0V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
3.0V
10
10
3.0V
≤
60µs
PULSE WIDTH
Tj = 175°C
1
≤
60µs
PULSE WIDTH
1
0.1
1
Tj = 25°C
10
100
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
ID, Drain-to-Source Current (A)
ID = 40A
VGS = 10V
100
T J = 175°C
10
1
T J = 25°C
VDS = 15V
≤60µs
PULSE WIDTH
0.1
1
2
3
4
5
6
7
8
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
vs. Temperature
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3
IRLB8748PbF
10000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
14.0
ID= 32A
VGS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
VDS= 24V
VDS= 15V
C, Capacitance (pF)
Ciss
1000
Coss
Crss
100
1
10
VDS, Drain-to-Source Voltage (V)
100
0
10
20
30
40
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
TJ = 175°C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100µsec
100
1msec
10msec
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
0
1
10
100
10
T J = 25°C
1
VGS = 0V
0.1
0.0
0.5
1.0
1.5
2.0
2.5
VSD, Source-to-Drain Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRLB8748PbF
100
Limited By Package
80
ID, Drain Current (A)
VGS(th) , Gate threshold Voltage (V)
2.5
2.0
60
1.5
ID = 50µA
1.0
40
20
ID = 250µA
ID = 1.0mA
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
0.5
-75 -50 -25
0
25 50 75 100 125 150 175
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current vs.
Case Temperature
Fig 10.
Threshold Voltage vs. Temperature
10
Thermal Response ( Z thJC ) °C/W
1
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
τ
J
τ
J
τ
1
R
1
R
1
τ
2
R
2
R
2
R
3
R
3
τ
3
R
4
R
4
τ
C
τ
4
Ri (°C/W)
1.55246
τ
τi
(sec)
0.005303
8.250407
6.932919
0.000317
0.00682
0.00172
0.43999
τ
1
τ
2
τ
3
τ
4
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Ci=
τi/Ri
Ci i/Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
0.001
1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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