Data Sheet
LOW POWER DUAL OPERATIONAL AMPLIFIERS
General Description
The AS358/358A consist of two independent, high
gain and internally frequency compensated operational
amplifiers, they are specifically designed to operate
from a single power supply. Operation from split
power supply is also possible and the low power sup-
ply current drain is independent of the magnitude of
the power supply voltages. Typical applications
include transducer amplifiers, DC gain blocks and
most conventional operational amplifier circuits.
The AS358/358A series are compatible with industry
standard 358. AS358A has more stringent input offset
voltage than AS358.
The AS358 is available in DIP-8, SOIC-8, TSSOP-8
and MSOP-8 packages, AS358A is available in DIP-8
and SOIC-8 packages.
AS358/358A
Features
·
·
·
·
·
·
Internally Frequency Compensated for Unity
Gain
Large Voltage Gain: 100dB (Typical)
Low Input Bias Current: 20nA (Typical)
Low Input Offset Voltage: 2mV (Typical)
Low Supply Current: 0.5mA (Typical)
Wide Power Supply Voltage:
Single Supply: 3V to 36V
Dual Supplies: ±1.5V to ±18V
Input Common Mode Voltage Range Includes
Ground
Large Output Voltage Swing: 0V to V
CC
-1.5V
·
·
Applications
·
·
·
Battery Charger
Cordless Telephone
Switching Power Supply
SOIC-8
DIP-8
TSSOP-8
MSOP-8
Figure 1. Package Types of AS358/358A
Sep. 2006 Rev. 1. 6
1
BCD Semiconductor Manufacturing Limited
Data Sheet
LOW POWER DUAL OPERATIONAL AMPLIFIERS
Pin Configuration
M/P/G/MM Package
(SOIC-8/DIP-8/TSSOP-8/MSOP-8)
OUTPUT 1
INPUT 1-
INPUT 1+
GND
1
2
3
4
8
7
6
5
V
CC
OUTPUT 2
INPUT 2-
INPUT 2+
AS358/358A
Figure 2. Pin Configuration of AS358/358A (Top View)
Functional Block Diagram
V
CC
6µA
4µA
100µA
Q5
Q6
Q2
-
INPUTS
+
Q10
Q8
Q9
Q1
Q3
Q4
Rsc
OUTPUT
Cc
Q7
Q11
Q12
50µA
Q13
Figure 3. Functional Block Diagram of AS358/358A
(Each Amplifier)
Sep. 2006 Rev. 1. 6
2
BCD Semiconductor Manufacturing Limited
Data Sheet
LOW POWER DUAL OPERATIONAL AMPLIFIERS
Ordering Information
Circuit Type
Blank: AS358
A: AS358A
AS358
AS358/358A
-
E1: Lead Free
Blank: Tin Lead
TR: Tape and Reel
Blank: Tube
Package
M: SOIC-8
P: DIP-8
G: TSSOP-8
MM: MSOP-8
Package
Temperature
Range
Part Number
Tin Lead
AS358M
Lead Free
AS358M-E1
AS358MTR-E1
AS358AM-E1
AS358AMTR-E1
Marking ID
Tin Lead
AS358M
AS358M
Lead Free
AS358M-E1
AS358M-E1
AS358AM-E1
AS358AM-E1
AS358P
AS358P-E1
AS358AP-E1
EG3A
EG3A
AS358MM-E1
AS358MM-E1
Packing Type
Tube
Tape & Reel
Tube
Tape & Reel
Tube
Tube
Tube
Tape & Reel
Tube
Tape & Reel
SOIC-8
-40 to 85
o
C
AS358MTR
DIP-8
-40 to 85
o
C
-40 to 85
o
C
-40 to 85
o
C
AS358P
AS358P-E1
AS358AP-E1
AS358G-E1
AS358GTR-E1
AS358MM-E1
AS358MMTR-E1
TSSOP-8
MSOP-8
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.
Sep. 2006 Rev. 1. 6
3
BCD Semiconductor Manufacturing Limited
Data Sheet
LOW POWER DUAL OPERATIONAL AMPLIFIERS
Absolute Maximum Ratings (Note 1)
Parameter
Power Supply Voltage
Differential Input Voltage
Input Voltage
Symbol
V
CC
V
ID
V
IC
DIP-8
SOIC-8
Value
40
40
-0.3 to 40
830
550
Unit
V
V
V
AS358/358A
Power Dissipation (T
A
=25
o
C)
Operating Junction Temperature
Storage Temperature Range
Lead Temperature (Soldering, 10 Seconds)
P
D
TSSOP-8
MSOP-8
150
-65 to 150
260
500
470
mW
T
J
T
STG
T
LEAD
o
C
o
C
o
C
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods
may affect device reliability.
Recommended Operating Conditions
Parameter
Supply Voltage
Ambient Operating Temperature Range
Symbol
V
CC
T
A
Min
3
-40
Max
36
85
Unit
V
o
C
Sep. 2006 Rev. 1. 6
4
BCD Semiconductor Manufacturing Limited
Data Sheet
LOW POWER DUAL OPERATIONAL AMPLIFIERS
Electrical Characteristics
Limits in standard typeface are for T
A
=25
o
C,
bold
typeface applies over -40
o
C to 85
o
C (Note 2), V
CC
=5V, GND=0V, unless
otherwise specified.
Parameter
Symbol
Test Conditions
V
O
=1.4V, R
S
=0Ω,
V
CC
=5V to 30V
AS358
AS358A
Min
Typ
2
2
Max
5
7
3
5
7
20
5
200
200
30
100
0
0.7
0.5
85
80
60
60
70
60
-120
20
20
10
5
12
50
40
26
26
27
27
5
20
30
mV
28
V
60
15
40
100
70
100
V
CC
-1.5
AS358/358A
Unit
Input Offset Voltage
V
IO
mV
Average Temperature Coeffi-
cient of Input Offset Voltage
Input Bias Current
Input Offset Current
Input Common Mode Voltage
Range (Note 3)
Supply Current
Large Signal Voltage Gain
Common
Ratio
Power
Ratio
Mode
Supply
Rejection
Rejection
∆V
IO
/∆T T
A
=-40 to 85
o
C
I
BIAS
I
IO
V
IR
I
CC
G
V
CMRR
PSRR
CS
I
IN
+ or I
IN
-, V
CM
=0V
I
IN
+ - I
IN
-, V
CM
=0V
V
CC
=30V
T
A
=-40 to 85
o
C, R
L
=∞, V
CC
=30V
T
A
=-40 to 85
o
C, R
L
=∞, V
CC
=5V
V
CC
=15V, V
O
=1V to 11V, R
L
≥ 2kΩ
DC, V
CM
=0V to (V
CC
-1.5)V
V
CC
=5V to 30V
f=1kHz to 20kHz
µV/
o
C
nA
nA
V
mA
dB
dB
dB
dB
mA
mA
µA
mA
2
1.2
Channel Separation
Source
Output Current
Sink
Output Short Circuit Current
to Ground
I
SOURCE
V
IN
+=1V, V
IN
-=0V, V
CC
=15V, V
O
=2V
V
IN
+=0V, V
IN
-=1V, V
CC
=15V, V
O
=2V
V
IN
+=0V,V
IN
-=1V,V
CC
=15V, V
O
=0.2V
I
SC
V
CC
=15V
V
CC
=30V, R
L
=2kΩ
V
OH
I
SINK
Output Voltage Swing
V
OL
V
CC
=30V, R
L
=10kΩ
V
CC
=5V, R
L
= 10kΩ
Note 2: Limits over the full temperature are guaranteed by design, but not tested in production.
Sep. 2006 Rev. 1. 6
5
BCD Semiconductor Manufacturing Limited
模拟与混合信号
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
