IRFR8314PbF
HEXFET
®
Power MOSFET
Application
Optimized
for UPS/Inverter Applications
Low
Voltage Power Tools
D
V
DSS
R
DS(on)
max
(@ V
GS
= 10V)
(@ V
GS
= 4.5V)
Qg
(typical)
I
D (Silicon Limited)
I
D (Package Limited)
D
S
G
D-Pak
30
2.2
3.1
40
179
90A
V
m
nC
A
G
S
Benefits
Fully
Characterized Avalanche Voltage and Current
Lead-Free,
RoHS Compliant
G
Gate
Standard Pack
Form
Quantity
Tape and Reel
2000
D
Drain
S
Source
Base part number
IRFR8314PbF
Package Type
D-Pak
Orderable Part Number
IRFR8314TRPbF
Absolute Maximum Rating
Symbol
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
C
= 100°C
T
J
T
STG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Max.
30
± 20
179
127
90
357
125
63
0.83
-55 to + 175
300
Typ.
–––
–––
–––
Max.
1.2
50
110
Units
°C/W
Units
V
A
W
W
W/°C
°C
Thermal Resistance
Symbol
Parameter
Junction-to-Case
R
JC
Junction-to-Ambient (PCB Mount)
R
JA
Junction-to-Ambient
R
JA
Notes
through are
on page 9
1
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© 2014 International Rectifier
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July 01, 2014
IRFR8314PbF
Min.
30
–––
–––
–––
1.2
–––
–––
–––
–––
–––
189
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– –––
V V
GS
= 0V, I
D
= 250µA
18
––– mV/°C Reference to 25°C, I
D
= 1mA
1.6
2.2
m V
GS
= 10V, I
D
= 90A
2.6
3.1
V
GS
= 4.5V, I
D
= 72A
1.7
2.2
V V
DS
= V
GS
, I
D
= 100µA
-7.0
–––
–––
–––
–––
–––
36
10
7.7
10
8.3
20
2.0
19
98
28
30
4945
908
493
––– mV/°C
1.0
V
DS
=24 V, V
GS
= 0V
µA
150
V
DS
=24V,V
GS
= 0V,T
J
=125°C
100
V
GS
= 20V
nA
-100
V
GS
= -20V
–––
S V
DS
= 15V, I
D
=72A
54
–––
V
DS
= 15V
–––
nC V
GS
= 4.5V
–––
I
D
= 72A
–––
–––
–––
–––
V
DD
= 15V
–––
ns I
D
= 72A
–––
–––
–––
–––
–––
R
G
= 1.8
V
GS
= 4.5V
V
GS
= 0V
pF
V
DS
= 15V
ƒ = 1.0MHz
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
BV
DSS
Drain-to-Source Breakdown Voltage
BV
DSS
/T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
V
GS(th)
/T
J
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Avalanche Characteristics
E
AS (Thermally limited)
Single Pulse Avalanche Energy
E
AS (tested)
Single Pulse Avalanche Energy Tested Value
I
A
Avalanche Current
Diode Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ. Max. Units
––– 179
A
–––
–––
31
87
357
1.0
47
130
V
180
279
72
mJ
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C,I
S
= 72A,V
GS
= 0V
ns T
J
= 25°C I
F
= 72A ,V
DD
=15V
nC di/dt = 360A/µs
2
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July 01, 2014
1000
TOP
VGS
10V
5.5V
4.5V
4.0V
3.5V
3.3V
3.0V
2.8V
IRFR8314PbF
1000
TOP
VGS
10V
9.0V
7.0V
5.5V
4.5V
4.0V
3.5V
3.0V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
BOTTOM
100
10
2.8V
2.8V
60µs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
10
0.1
1
60µs PULSE WIDTH
Tj = 175°C
10
100
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
Fig 2.
Typical Output Characteristics
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
ID = 90A
VGS = 10V
100
T J = 175°C
1.5
10
T J = 25°C
1
VDS = 15V
60µs
PULSE WIDTH
0.1
1
2
3
4
5
6
1.0
0.5
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Fig 4.
Normalized On-Resistance vs. Temperature
14
ID= 72A
VGS, Gate-to-Source Voltage (V)
12
10
8
6
4
2
0
C, Capacitance (pF)
10000
Ciss
Coss
Crss
VDS= 24V
VDS= 15V
1000
100
1
10
VDS, Drain-to-Source Voltage (V)
100
0
20
40
60
80
100
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
3
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© 2014 International Rectifier
Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
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July 01, 2014
1000
IRFR8314PbF
100µsec
ISD, Reverse Drain Current (A)
100
T J = 175°C
ID, Drain-to-Source Current (A)
100
1msec
LIMITED BY PACKAGE
10
T J = 25°C
10
OPERATION IN THIS
AREA LIMITED BY R DS(on)
10msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
0.1
1
DC
1
VGS = 0V
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
10
VSD, Source-to-Drain Voltage (V)
VDS, Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
200
Limited By Package
VGS(th) , Gate threshold Voltage (V)
Fig 8.
Maximum Safe Operating Area
2.5
180
160
ID, Drain Current (A)
2.0
140
120
100
80
60
40
20
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
1.5
ID = 150µA
ID = 250µA
ID = 1.0mA
ID = 1.0A
1.0
0.5
0.0
-75 -50 -25 0
25 50 75 100 125 150 175 200
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current vs. Case Temperature
10
Thermal Response ( Z thJC ) °C/W
Fig 10.
Threshold Voltage vs. Temperature
1
0.1
0.01
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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July 01, 2014
IRFR8314PbF
)
RDS(on), Drain-to -Source On Resistance (m
8
800
ID = 90A
EAS , Single Pulse Avalanche Energy (mJ)
700
600
500
400
300
200
100
0
25
50
75
100
6
ID
TOP
16A
33A
BOTTOM 72A
4
TJ = 125°C
2
TJ = 25°C
0
2
4
6
8
10
12
14
16
18
20
125
150
175
VGS, Gate -to -Source Voltage (V)
Starting T J , Junction Temperature (°C)
Fig 12.
Typical On-Resistance vs. Gate Voltage
Fig 13.
Maximum Avalanche Energy vs. Drain Current
5
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© 2014 International Rectifier
Submit Datasheet Feedback
July 01, 2014
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