StrongIRFET
IRF7946PbF
Applications
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DirectFET
®
Power MOSFET
Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
V
DSS
R
DS(on)
typ.
max.
I
D (Silicon Limited)
I
D (Package Limited)
40V
1.1m
Ω
1.4mΩ
198A
90A
c
G
S
D
S
Benefits
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Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Fully Characterized Capacitance and Avalanche
SOA
Enhanced body diode dV/dt and dI/dt Capability
RoHS Compliant Containing no Lead, no Bromide
and no Halogen
MX
DirectFET ISOMETRIC
Base part number
IRF7946TRPbF
Package Type
DirectFET MX
Standard Pack
Form
Tape and Reel
Quantity
4800
Complete Part Number
IRF7946TRPbF
RDS(on), Drain-to -Source On Resistance (m
Ω)
6.0
ID = 90A
200
Limited By Package
4.0
ID, Drain Current (A)
150
100
T J = 125°C
2.0
50
T J = 25°C
0.0
4
6
8
10
12
14
16
18
20
0
25
50
75
100
125
150
T C , Case Temperature (°C)
VGS, Gate -to -Source Voltage (V)
Fig 1.
Typical On-Resistance vs. Gate Voltage
1
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2014 International Rectifier
Fig 2.
Maximum Drain Current vs. Case Temperature
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November 25, 2014
IRF7946PbF
Absolute Maximum Ratings
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
T
J
T
STG
Avalanche Characteristics
E
AS (Thermally limited)
E
AS (Thermally limited)
I
AR
E
AR
Thermal Resistance
Symbol
R
θJA
R
θJA
R
θJA
R
θJC
R
θJA-PCB
Parameter
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Max.
198
125
793
96
0.77
± 20
-55 to + 150
d
Units
A
W
W/°C
V
°C
mJ
A
mJ
Units
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Ãd
e
l
d
85
200
See Fig. 14, 15, 22a, 22b
Parameter
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
Junction-to-PCB Mounted
n
p
o
qk
Typ.
–––
12.5
20
–––
1.0
Max.
45
–––
–––
1.3
–––
°C/W
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
V
(BR)DSS
ΔV
(BR)DSS
/ΔT
J
R
DS(on)
V
GS(th)
I
DSS
I
GSS
R
G
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Min.
40
–––
–––
2.2
–––
–––
–––
–––
–––
Typ.
–––
0.03
1.1
1.7
3.0
–––
–––
–––
–––
0.67
Max.
–––
–––
1.4
–––
3.9
1.0
150
100
-100
–––
Units
V
V/°C
mΩ
mΩ
V
μA
nA
Ω
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1.0mA
V
GS
= 10V, I
D
= 90A
V
GS
= 6.0V, I
D
= 72A
V
DS
= V
GS
, I
D
= 150μA
V
DS
= 40V, V
GS
= 0V
V
DS
= 40V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
g
g
d
Notes:
Mounted on minimum footprint full size board with metalized
Used double sided cooling , mounting pad with large heatsink.
back and with small clip heatsink.
T
C
measured with thermocouple mounted to top (Drain) of part.
Surface mounted on 1 in. square Cu
(still air).
2
Mounted to a PCB with
small clip heatsink (still air)
Submit Datasheet Feedback
footprint full size board with
metalized back and with small
clip heatsink (still air)
November 25, 2014
Mounted on minimum
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©
2014 International Rectifier
IRF7946PbF
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
gfs
Q
g
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
eff. (ER)
C
oss
eff. (TR)
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Q
g
- Q
gd
)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
Parameter
Forward Transconductance
Min.
91
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
141
36
44
97
20
49
54
41
6852
1046
735
1307
1465
Max.
–––
212
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
S
nC
I
D
= 90A
V
DS
=20V
V
GS
= 10V
ns
V
DD
= 20V
I
D
= 30A
R
G
= 2.7Ω
V
GS
= 10V
pF
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0 MHz
V
GS
= 0V, V
DS
Conditions
V
DS
= 10V, I
D
= 90A
g
I
D
= 90A, V
DS
=0V, V
GS
= 10V
g
i
= 0V to 32V
h
Conditions
D
V
GS
= 0V, V
DS
= 0V to 32V
Diode Characteristics
Symbol
I
S
I
SM
V
SD
dv/dt
t
rr
Q
rr
I
RRM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Peak Diode Recovery
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
0.75
1.6
49
50
74
73
2.6
Max.
96
Units
A
A
V
V/ns
ns
nC
A
MOSFET symbol
showing the
integral reverse
Ãd
793
1.2
–––
–––
–––
–––
–––
–––
G
S
p-n junction diode.
f
T
J
= 25°C, I
S
= 90A, V
GS
= 0V
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
V
R
= 34V,
I
F
= 90A
g
g
T
J
= 175°C, I
S
= 90A, V
DS
= 40V
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
di/dt = 100A/μs
Notes:
Calculated continuous current based on maximum allowable
junction temperature. Package limit is 90A.
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.021mH
R
G
= 50Ω, I
AS
= 90A, V
GS
=10V.
I
SD
≤
90A, di/dt
≤
1135A/μs, V
DD
≤
V
(BR)DSS
, T
J
≤
150°C.
Pulse width
≤
400μs; duty cycle
≤
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as
C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
R
θ
is
measured at T
J
approximately 90°C.
Limited by T
Jmax
starting T
J
= 25°C, L= 1mH, R
G
= 50Ω, I
AS
= 20A, V
GS
=10V
3
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©
2014 International Rectifier
Submit Datasheet Feedback
November 25, 2014
IRF7946PbF
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
BOTTOM
100
10
4.5V
4.5V
≤
60μs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
≤
60μs PULSE WIDTH
Tj = 150°C
10
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
Fig 3.
Typical Output Characteristics
1000
Fig 4.
Typical Output Characteristics
1.8
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 90A
1.6
1.4
1.2
1.0
0.8
0.6
ID, Drain-to-Source Current (A)
VGS = 10V
100
TJ = 150°C
10
T J = 25°C
VDS = 10V
≤60μs
PULSE WIDTH
1.0
2
3
4
5
6
7
8
-60 -40 -20 0
20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 5.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Fig 6.
Normalized On-Resistance vs. Temperature
14.0
VGS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
ID= 90A
VDS= 32V
VDS= 20V
C, Capacitance (pF)
10000
Ciss
Coss
Crss
1000
100
1
10
VDS, Drain-to-Source Voltage (V)
100
0
20
40
60
80 100 120 140 160 180
QG, Total Gate Charge (nC)
Fig 7.
Typical Capacitance vs. Drain-to-Source Voltage
4
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2014 International Rectifier
Fig 8.
Typical Gate Charge vs. Gate-to-Source Voltage
November 25, 2014
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IRF7946PbF
1000
10000
1000
100
10
1
0.1
0.01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
TJ = 150°C
1msec
100μsec
Limited by
Package
10msec
DC
10
T J = 25°C
VGS = 0V
1.0
VSD, Source-to-Drain Voltage (V)
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
Fig 9.
Typical Source-Drain Diode
Forward Voltage
48
Id = 1.0mA
47
46
Energy (μJ)
Fig 10.
Maximum Safe Operating Area
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
VDS= 0V to 32V
45
44
43
42
41
40
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Temperature ( °C )
0
5
10
15
20
25
30
35
40
45
Fig 11.
Drain-to-Source Breakdown Voltage
RDS(on), Drain-to -Source On Resistance ( mΩ)
Fig 12.
Typical C
OSS
Stored Energy
VGS = 5.5V
VGS = 6.0V
VGS = 7.0V
VGS = 8.0V
VGS =10V
VDS, Drain-to-Source Voltage (V)
10.0
8.0
6.0
4.0
2.0
0.0
0
200
400
600
800
1000
ID, Drain Current (A)
Fig 13.
Typical On-Resistance vs. Drain Current
5
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©
2014 International Rectifier
Submit Datasheet Feedback
November 25, 2014
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