IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV),
WeEn Semiconductors,
which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW
- For www.nxp.com use
www.ween-semi.com
Email
- For salesaddresses@nxp.com use
salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V.
{year}.
All rights reserved”
becomes “
©
WeEn
Semiconductors Co., Ltd.
{year}.
All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via
salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
BYV60W-600P
Ultrafast power diode
5 November 2015
Product data sheet
1. General description
Ultrafast power diode in a SOD142 (2-lead TO247) plastic package.
2. Features and benefits
•
•
•
•
•
Fast switching and soft reverse recovery characteristics
Low forward voltage drop
Low leakage current
Low reverse recovery current
Reduces switching losses in associated MOSFET or IGBT
3. Applications
•
•
•
•
UPS
EV Charger
Welding Machine
Air Conditioner
4. Quick reference data
Table 1.
Symbol
V
RRM
I
F(AV)
I
FRM
I
FSM
Quick reference data
Parameter
repetitive peak reverse
voltage
average forward
current
δ = 0.5 ; T
mb
≤ 70 °C; square-wave
pulse;
Fig. 1; Fig. 2; Fig. 3
-
-
-
-
-
-
120
600
660
A
A
A
Conditions
Min
-
-
Typ
-
-
Max
600
60
Unit
V
A
TO
-24
7
repetitive peak forward δ = 0.5 ; t
p
= 25 µs; T
mb
≤ 70 °C;
current
square-wave pulse
non-repetitive peak
forward current
t
p
= 10 ms; T
j(init)
= 25 °C; sine-wave
pulse;
Fig. 4
t
p
= 8.3 ms; T
j(init)
= 25 °C; sine-wave
pulse;
Fig. 4
Static characteristics
V
F
forward voltage
I
F
= 60 A; T
j
= 25 ½½C;
Fig. 6
I
F
= 60 A; T
j
= 150 °C;
Fig. 6
-
-
1.55
1.2
2
1.6
V
V
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NXP Semiconductors
BYV60W-600P
Ultrafast power diode
Symbol
t
rr
Parameter
reverse recovery time
Conditions
I
F
= 1 A; V
R
= 30 V; dI
F
/dt = 50 A/µs;
T
j
= 25 °C;
Fig. 7
I
F
= 60 A; V
R
= 400 V; dI
F
/dt = 200 A/
µs; T
j
= 25 °C;
Fig. 7
I
F
= 60 A; V
R
= 400 V; dI
F
/dt = 200 A/
µs; T
j
= 125 °C;
Fig. 7
Min
-
-
-
Typ
-
53
120
Max
55
-
-
Unit
ns
ns
ns
Dynamic characteristics
5. Pinning information
Table 2.
Pin
1
2
mb
Pinning information
Symbol Description
K
A
mb
cathode
anode
mounting base; connected to
cathode
Simplified outline
Graphic symbol
K
A
001aaa020
1
2
TO-247 (SOD142)
6. Ordering information
Table 3.
Ordering information
Package
Name
BYV60W-600P
TO-247
Description
Plastic Single-ended through-hole package; Heatsink
mounted; 1 mounting hole; 2-lead TO-247
Version
SOD142
Type number
BYV60W-600P
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
5 November 2015
2 / 11
NXP Semiconductors
BYV60W-600P
Ultrafast power diode
7. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
I
FSM
Parameter
repetitive peak reverse voltage
crest working reverse voltage
reverse voltage
average forward current
repetitive peak forward current
non-repetitive peak forward
current
DC
δ = 0.5 ; T
mb
≤ 70 °C; square-wave
pulse;
Fig. 1; Fig. 2; Fig. 3
δ = 0.5 ; t
p
= 25 µs; T
mb
≤ 70 °C;
square-wave pulse
t
p
= 10 ms; T
j(init)
= 25 °C; sine-wave
pulse;
Fig. 4
t
p
= 8.3 ms; T
j(init)
= 25 °C; sine-wave
pulse;
Fig. 4
T
stg
T
j
160
P
tot
(W)
140
120
100
80
60
40
20
0
0
0.1
0.2
40
0.5
60
4.0
Conditions
Min
-
-
-
-
-
-
-
-55
-
Max
600
600
600
60
120
600
660
175
175
aaa-020496
Unit
V
V
V
A
A
A
A
°C
°C
storage temperature
junction temperature
aaa-020495
100
P
tot
(W)
80
2.8
2.2
δ=1
a = 1.57
1.9
20
0
20
40
60
80
100
I
F(AV)
(A)
0
20
40
I
F(AV)
(A)
60
I
F(AV)
= I
F(RMS)
× √δ
V
o
= 1.600 V; R
s
= 0.001 Ω
Fig. 1.
Forward power dissipation as a function of
average forward current; square waveform;
maximum values
Fig. 2.
a = form factor = I
F(RMS)
/ I
F(AV)
V
o
= 1.600 V; R
s
= 0.001 Ω
Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
BYV60W-600P
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
5 November 2015
3 / 11
NXP Semiconductors
BYV60W-600P
Ultrafast power diode
80
I
F(AV)
(A)
60
70 °C
aaa-020497
10
4
aaa-020492
I
FSM
(A)
40
10
3
I
F
I
FSM
20
t
t
p
T
j(init)
= 25 °C max
0
-50
0
50
100
150
200
T
mb
(°C)
10
2
10
-5
10
-4
10
-3
t
p
(s)
10
-2
Fig. 3.
Forward current as a function of mounting base Fig. 4.
temperature; maximum values
Non-repetitive peak forward current as a
function of pulse width; sinusoidal waveform;
maximum values
BYV60W-600P
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
5 November 2015
4 / 11
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