VITESSE
SEMICONDUCTOR CORPORATION
Data Sheet
VSC7810
Features
• Integrated Photodetector/Transimpedance
Amplifier Optimized for High-Speed Optical
Communications Applications
• Integrated AGC
• Fibre Channel/Gigabit Ethernet Compatible
Bandwidth
(MHz)
1200
Photodetector/Transimpedance Amplifier
Family for Optical Communication
• High Bandwidth
• Low Input Noise Equivalent Power
• Large Optically Active Area
• Single 5V Power Supply
Part Number
VSC7810
Data Rate
Full Speed: 1.25Gb/s
Input Noise
(
µ
W rms)
0.45
Optically Active Area
(
µ
m diameter)
100
General Description
The VSC7810 integrated Photodetector/Transimpedance Amplifier provides a highly integrated solution
for converting light from a fiber optic communications channel into a differential output voltage. The benefits
of Vitesse Semiconductor’s Gallium Arsenide H-GaAs process are fully utilized to provide very high bandwidth
and low noise in a product with a large optically active area for easy alignment. The sensitivity, duty cycle dis-
tortion and jitter meet or exceed all Fibre Channel and Gigabit Ethernet application requirements. Parts are
available in either die form, flat-windowed packages or in ball-lens packages.
By using a metal-semiconductor-metal (MSM) photodetector with a monolithic integrated transimpedance
amplifier, the input capacitance is lowered which allows for a larger optically active area than in discrete photo-
detectors. Integration also allows superior tracking over process, temperature and voltage between the photode-
tector and the amplifier, resulting in higher performance. This part can easily be used in developing Fibre
Channel Electro-Optic Receivers which exhibit very high performance and ease of use.
VSC7810 Block Diagram
Photodetector/Transimpedance Amplifier
+3.3V
DOUTP
DOUTN
GND
Both DOUTP and DOUTN are back-terminated to 25Ω.
G52145-0, Rev 4.1
04/05/01
©
VITESSE
SEMICONDUCTOR CORPORATION
• 741 Calle Plano • Camarillo, CA 93012
Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com
Internet: www.vitesse.com
Page 1
VITESSE
SEMICONDUCTOR CORPORATION
Photodetector/Transimpedance Amplifier
Family for Optical Communication
Table 1: Electro-Optical Specifications
(1)
Symbol
V
SS
I
DD
PSRR
λ
f
C
BW
S
R
O
V
D
R
D
V
DC
∆V
DC
NEP
O
V
NO
DCD
I
OUT
PDJ
Data Sheet
VSC7810
Typ
(2)
5.0
26
-
840
-
1200
-25
-
0.52
2.2
1.5
40
0.45
0.66
1.5
-
40
100
160
355
325
Parameter
Supply Voltage
Supply Current
Power Supply Rejection Ratio
Wavelength
Low Frequency Cutoff
Optical Modulation Bandwidth
Sensitivity
Single-Ended Output Impedance
Differential Output Voltage
Differential Responsivity
Output Bias Voltage
Bias Offset Voltage
Input Noise Equivalent Power
Output Noise Voltage
Duty Cycle Distortion
Output Drive Current
Pattern Dependent Jitter
Optically Active Area
Min
4.5
13
35
700
-
800
-22
25
0.35
0.8
1.2
-
0.35
0.55
-
2.5
20
-
120
310
280
Max
5.5
40
-
850
1.8
1300
-27
60
0.65
-
2.5
150
0.93
0.75
4.5
8
60
-
200
400
370
Units
V
mA
dB
nm
MHz
MHz
dBm
Ω
V
mV/µW
V
mV
µW
rms
mV rms
%
mA
ps
µm
ps
ps
ps
Conditions
Frequencies up to 40MHz
(includes external filter).
-3dB, P = -15dBm @ 50MHz
(4)
-3dB, P = -15dBm @ 50MHz
(4)
1.063Gb/s, BER10
-12(3)
P = -4.5dBm,
R
LOAD
= 100Ω differential
R
LOAD
= 100Ω
P = -15dBm @ 50MHz
P = 0mW
(5)
P = 0mW
(5)
P = -4.5dBm
P = -4.5dBm
+/-10% Voltage Window
Diameter
P = -5dBm
20%-80% P = -4.5dBm
20%-80% P = -4.5dBm
PPJ
t
R
t
F
PP Jitter
Rise Time
Fall Time
Notes: (1) Specified over 0°C (ambient) to 70°C (case). (2) Typical conditions 25°C and 3.3V power supply. (3) See Note 1 in
Application Note 48. (4) P = Incident Optical Power (5) See Note 2 in Application Note 48.
Page 2
©
VITESSE
SEMICONDUCTOR CORPORATION
• 741 Calle Plano • Camarillo, CA 93012
Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com
Internet: www.vitesse.com
G52145-0, Rev 4.1
04/05/01
VITESSE
SEMICONDUCTOR CORPORATION
Data Sheet
VSC7810
Photodetector/Transimpedance Amplifier
Family for Optical Communication
Figure 1: Amplifude vs. Frequency
1 096.795 514 MHz
21
3
Amplitude
1 000.150
1 999.700
Frequency (MHz)
Frequency response of VSC7810WB upper 3db frequency is measured with respect to response at 50 MHz
Table 2: Absolute Maximum Ratings
Symbol
V
SS
T
STG
H
STG
H
OP
P
INC
IS
Parameter
Power Supply
Storage Temperature
Storage Humidity
Operating Humidity
Incident Optical Power
Impact Shock
Limits
6V
-55°C to 125°C (case temperature under bias)
5 to 95% R.H. (including condensation)
8 to 80% R.H. (excluding condensation)
+3dBm
500 G. Half Sine Wave
Pulse Duration 1 +/-0.5 ms
3 blows in each direction
20 > 2000 > 20 Hz, 10 Minutes
10 G. Peak Acceleration
4 Complete Cycles, 3 Perpendicular Axes
1500V
V
IB
V
ESD
Vibration
ESD Voltage on DOUTP, DOUTN, VSS,
GND
Table 3: Recommended Operating Conditions
Symbol
V
SS
T
OP
Parameter
Power Supply
Operating Temperature
Limits
4.5V to 5.5V (5V nominal)
0°C (ambient) to 70° C (case) normal range and 90°C (case) extended range
(1)
NOTE: (1) See Note 1 in "Notes on Measurement Conditions & Applications" section of this data sheet for extended temperature range
operation.
G52145-0, Rev 4.1
04/05/01
©
VITESSE
SEMICONDUCTOR CORPORATION
• 741 Calle Plano • Camarillo, CA 93012
Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com
Internet: www.vitesse.com
Page 3
VITESSE
SEMICONDUCTOR CORPORATION
Photodetector/Transimpedance Amplifier
Family for Optical Communication
Data Sheet
VSC7810
Description
Table 4: Pin Table Specifications for Ball Lens Packages, Flat Window Packages and Bare Die
Symbol
DOUTP
DOUTN
VSS
GND
Data output normal (with reference to incident light)
Data output complement (inverting, with reference to incident light)
Power supply
Ground (package case)
Note: Pin Diagram is identical for both TO-46 and TO-56 package styles.
Figure 2: Pin Diagram
VSS
DOUTP
DOUTN
GND
Bottom View
Figure 3: Schematic View of Bare Die Pad Assignments
GND
DOUTN
GND
DOUTP
GND
VSS
Page 4
©
VITESSE
SEMICONDUCTOR CORPORATION
• 741 Calle Plano • Camarillo, CA 93012
Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com
Internet: www.vitesse.com
G52145-0, Rev 4.1
04/05/01
VITESSE
SEMICONDUCTOR CORPORATION
Data Sheet
VSC7810
Photodetector/Transimpedance Amplifier
Family for Optical Communication
Temperature Dependence of Operating Parameters
This section describes the dependence of important operating parameters shown in Table 1 as a function of
die
(or equivalently junction) tempeature and power supply. In order to relate the die temperature to an equiva-
lent
case
temperature, the following thermal characteristics of the package are provided (note that the thermal
conductivity is identical for TO-46 and TO-56 package styles.
Table 5: Thermal Resistance Calculation for TO-56 and TO-46 Packages
Chip Size
Chip Area A
Die Height (T
DIE
)
Epoxy Thickness (T
EPOXY
)
Header Thickness (T
HEADER
)
(Average for TO-46 and TO-56 package)
0.168cm x 0.104cm
0.015cm
2
0.066cm
0.0076cm
0.115cm
Thermal Path
T
J
θ
GaAs
θ
EXPOXY
Thermal Conductivities
K GaAs
K epoxy
K kovar
0.55W/cm °C
0.0186W/cm °C
0.17W/cm °C
θ
KOVAR
T
C
θ
GaAs
θ
epoxy
θ
kovar
=
T
die
K
GaAs
A
=
0.066
0.55 x 0.015
= 8
°C/W
=
T
epoxy
K
epoxy
A
T
kovar
K
kovar
A
=
0.0076
0.0186 x 0.015
= 27.24
°C/W
=
=
0.12
0.17 x 0.015
= 47
°C/W
θ
JC
= Thermal Resistance from Junction to Case = (8 + 27.24 + 47) = 82.24
°C/W
Example:
For VSC7810 at nominal supply current of 25mA and Vss = 5V
Temperature rise from junction to case = 0.025A x 5V x 82.24
°C/W
= 10.28
°C
G52145-0, Rev 4.1
04/05/01
©
VITESSE
SEMICONDUCTOR CORPORATION
• 741 Calle Plano • Camarillo, CA 93012
Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com
Internet: www.vitesse.com
Page 5
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