IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV),
WeEn Semiconductors,
which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW
- For www.nxp.com use
www.ween-semi.com
Email
- For salesaddresses@nxp.com use
salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V.
{year}.
All rights reserved”
becomes “
©
WeEn
Semiconductors Co., Ltd.
{year}.
All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via
salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
BT169H-L
SCR
4 October 2016
Product data sheet
1. General description
Planar passivated very sensitive gate Silicon Controlled Rectifier in a SOT54 (TO-92) plastic
package.
2. Features and benefits
•
•
•
High voltage capability
Planar passivated for voltage ruggedness and reliability
Very sensitive gate
3. Applications
•
•
•
•
•
Earth leakage circuit breakers or Ground Fault Circuit Interrupters (GFCI)
Ignition circuits
Low power latching circuits
Protection circuits / shut-down circuits: lighting ballasts
Protection circuits / shut-down circuits: Switched Mode Power Supplies
4. Quick reference data
Table 1. Quick reference data
Symbol
V
DRM
V
RRM
I
TSM
Parameter
repetitive peak off-
state voltage
repetitive peak reverse
voltage
non-repetitive peak on- half sine wave; T
j(init)
= 25 °C;
t
p
= 8.3 ms
state current
half sine wave; T
j(init)
= 25 °C;
t
p
= 10 ms;
Fig. 4; Fig. 5
T
j
I
T(AV)
I
T(RMS)
junction temperature
average on-state
current
RMS on-state current
half sine wave; T
lead
≤ 83 °C;
Fig. 1
half sine wave; T
lead
≤ 83 °C;
Fig. 2;
Fig. 3
V
D
= 12 V; I
T
= 10 mA; T
j
= 25 °C;
Fig. 7
Conditions
Min
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
Max
800
800
10
9
125
0.5
0.8
Unit
V
V
A
A
°C
A
A
Static characteristics
I
GT
gate trigger current
15
33
50
µA
Dynamic characteristics
WeEn Semiconductors
BT169H-L
SCR
Symbol
dV
D
/dt
Parameter
rate of rise of off-state
voltage
Conditions
V
DM
= 536 V; T
j
= 125 °C; R
GK
= 1 kΩ;
(V
DM
= 67% of V
DRM
); exponential
waveform;
Fig. 12
Min
150
Typ
-
Max
-
Unit
V/µs
5. Pinning information
Table 2. Pinning information
Pin
1
2
3
Symbol Description
A
G
K
anode
gate
cathode
321
Simplified outline
Graphic symbol
A
G
sym037
K
TO-92 (SOT54)
6. Ordering information
Table 3. Ordering information
Type number
BT169H-L
Package
Name
TO-92
Description
plastic single-ended leaded (through hole) package; 3 leads
Version
SOT54
7. Marking
Table 4. Marking codes
Type number
BT169H-L
Marking code
BT169HL
BT169H-L
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
4 October 2016
2 / 12
WeEn Semiconductors
BT169H-L
SCR
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
V
RRM
I
T(AV)
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state
voltage
repetitive peak reverse
voltage
average on-state current half sine wave; T
lead
≤ 83 °C;
Fig. 1
RMS on-state current
non-repetitive peak on-
state current
I t for fusing
rate of rise of on-state
current
peak gate current
peak reverse gate
voltage
peak gate power
average gate power
storage temperature
junction temperature
0.8
P
tot
(W)
0.6
2.8
0.4
4
conduction
angle
(degrees)
30
60
90
120
180
0
0.1
0.2
0.3
0.4
form
factor
a
4
2.8
2.2
1.9
1.57
0.5
α
101
2.2
a = 1.57
1.9
2
Conditions
Min
-
-
-
-
-
-
-
-
-
-
-
Max
800
800
0.5
0.8
10
9
0.41
50
1
5
2
0.1
150
125
001aab446
Unit
V
V
A
A
A
A
A²s
A/µs
A
V
W
W
°C
°C
77
T
lead(max)
(°C)
89
half sine wave; T
lead
≤ 83 °C;
Fig. 2; Fig. 3
half sine wave; T
j(init)
= 25 °C; t
p
= 8.3 ms
half sine wave; T
j(init)
= 25 °C; t
p
= 10 ms;
Fig. 4; Fig. 5
t
p
= 10 ms; SIN
I
T
= 2 A; I
G
= 10 mA; dI
G
/dt = 100 mA/µs
I t
dI
T
/dt
I
GM
V
RGM
P
GM
P
G(AV)
T
stg
T
j
2
over any 20 ms period
-
-40
-
0.2
113
0
I
T(AV)
(A)
125
0.6
α = conduction angle
a = form factor = I
T(RMS)
/ I
T(AV)
Fig. 1. Total power dissipation as a function of average on-state current; maximum values
BT169H-L
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
4 October 2016
3 / 12
WeEn Semiconductors
BT169H-L
SCR
2
I
T(RMS)
(A)
1.5
001aab449
1
I
T(RMS)
(A)
0.8
83 °C
001aab450
0.6
1
0.4
0.5
0.2
0
10
-2
10
-1
1
10
surge duration (s)
0
-50
0
50
100
150
T
lead
(°C)
f = 50 Hz; T
lead
= 83 °C
Fig. 2. RMS on-state current as a function of surge
duration for sinusoidal currents
10
I
TSM
(A)
8
Fig. 3. RMS on-state current as a function of lead
temperature; maximum values
003aac212
6
4
I
T
I
TSM
2
t
t
p
T
j(init)
= 25 °C max
0
1
10
10
2
number of cycles
10
3
f = 50 Hz
Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BT169H-L
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
4 October 2016
4 / 12
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