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CD0805-B00340

产品描述0.03 A, 45 V, SILICON, SIGNAL DIODE
产品类别半导体    分立半导体   
文件大小322KB,共9页
制造商ETC
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CD0805-B00340概述

0.03 A, 45 V, SILICON, SIGNAL DIODE

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IA
NT
Features
Applications
Lead free as standard
RoHS compliant*
Leadless
Low stored charge
Cellular phones
PDAs
Desktop PCs and
notebooks
Digital cameras
MP3 players
CD0805-xxxx products
are currently available,
although not recom-
mended for new designs. Use
CD1005-xxxx
products as an
alternative.
*R
oH
S
CO
M
PL
General Information
The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly
smaller electronic components.
Bourns offers small-signal high-speed Schottky Barrier Diodes for switching and rectification applications, in compact chip package 0805 size
format, which offer PCB real estate savings and are considerably smaller than competitive parts. The Schottky Barrier Diodes offer a forward
current of 30 mA, 100 mA or 200 mA, a reverse voltage of 30 V, 40 V or 45V and also have a low forward voltage option. The diodes are lead-
free with Cu/Ni/Au plated terminations and are compatible with lead-free manufacturing processes, conforming to many industry and
government regulations on lead-free components.
Bourns
®
Chip Diodes conform to JEDEC standards, easy to handle on standard pick and place equipment and their flat configuration makes
roll away much more difficult.
Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted)
Parameter
Symbol
CD0805-
B00340
CD0805-
B0130
CD0805-
B0130L
CD0805-
B0145
CD0805-
B0230
CD0805-
B0245
Unit
Forward Voltage (Max.)
Capacitance Between
Terminals (Max.)
(f = 1 MHz)
Reverse Current (Max.)
Absolute Ratings (@ TA = 25 °C Unless Otherwise Noted)
6
VF
CT
IR
Symbol
Schottky Barrier Chip Diode Series - 0805
0.37
(If = 1 mA)
2
(Vr = 1 V)
1
(Vr = 40 V)
1.00
(If = 0.1 A)
6
(Vr = 10 V)
2
(Vr = 25 V)
0.44
(If = 0.1 A)
12
(Vr = 10 V)
30
(Vr = 30 V)
0.55
(If = 0.1 A)
6
(Vr = 10 V)
30
(Vr = 45 V)
0.50
(If = 0.2 A)
12
(Vr = 10 V)
30
(Vr = 30 V)
0.55
(If = 0.2 A)
12
(Vr = 10 V)
30
(Vr = 45 V)
V
pF
µA
Parameter
Repetitive Peak
Reverse Voltage
Reverse Voltage
Average Forward Current
Forward Current,
Surge Peak
Power Dissipation
Storage Temperature
Junction Temperature
CD0805-
B00340
CD0805-
B0130
CD0805-
B0130L
CD0805-
B0145
CD0805-
B0230
CD0805-
B0245
Unit
VRRM
VR
Io
Isurge
PD
TSTG
TJ
45
40
30
500*
200
30
30
100
1000*
300
35
30
100
1000*
300
50
45
100
1000*
300
35
30
200
3000*
300
50
45
200
3000*
250
V
V
mA
mA
mW
°C
°C
-40 to +125
-40 to +125
How To Order
* Condition: 8.3 ms single half sine-wave superimposed on rate load
(JEDEC method).
CD 0805 - B 01 30 L
Common Code
Chip Diode
Package
• 0805
Model
B = Schottky Barrier Series
Average Forward Current (Io) Code
003 = 30 mA
01 = 100 mA
02 = 200 mA
(Code x 1000 mA = Average Forward Current)
Reverse Voltage (VR) Code
30 = 30 V
40 = 40 V
45 = 45 V
Forward Voltage Suffix
L = Low Forward Voltage Vf (CD0805-B0130L)
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
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