AOB436
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOB436 uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications. Standard
product
AOB436 is Pb-free (meets ROHS & Sony
259 specifications). AOB436L is a Green Product
ordering option. AOB436 and AOB436L are
electrically identical.
TO-263
D2-PAK
Features
V
DS
(V) = 25V
I
D
= 55A (V
GS
= 10V)
R
DS(ON)
< 7 mΩ (V
GS
= 10V)
R
DS(ON)
< 11 mΩ (V
GS
= 4.5V)
193
18
D
Top View
Drain Connected to
Tab
G
S
G
D
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
G
Pulsed Drain Current
Avalanche Current
C
C
C
Maximum
25
±20
55
55
150
30
45
50
25
3
2.1
-55 to 175
Units
V
V
A
A
mJ
W
W
°C
T
C
=25°C
T
C
=100°C
I
D
I
DM
I
AR
E
AR
P
D
P
DSM
T
J
, T
STG
T
C
=25°C
Repetitive avalanche energy L=0.1mH
Power Dissipation
Power Dissipation
B
T
C
=100°C
T
A
=25°C
T
A
=70°C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Case
B
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
10
41
1.9
Max
15
50
3
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AOB436
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Symbol
Parameter
Conditions
I
D
=250uA, V
GS
=0V
V
DS
=20V, V
GS
=0V
T
J
=55°C
V
DS
=0V, V
GS
=±20V
V
DS
=V
GS
, I
D
=250µA
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=30A
T
J
=125°C
V
GS
=4.5V, I
D
=30A
g
FS
V
SD
I
S
Forward Transconductance
V
DS
=5V, I
D
=30A
Diode Forward Voltage
I
S
=1A, V
GS
=0V
Maximum Body-Diode Continuous Current
1
100
5.7
8
9
53
0.73
1
50
1850
V
GS
=0V, V
DS
=12.5V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
472
275
0.86
34
V
GS
=10V, V
DS
=12.5V, I
D
=30A
16.8
7
8.5
7.5
V
GS
=10V, V
DS
=12.5V,
R
L
=0.39Ω, R
GEN
=3Ω
I
F
=30A, dI/dt=100A/µs
33
25
22
32
19
38
1.5
40
2220
11
S
V
A
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
7
mΩ
1.8
Min
25
1
5
100
3
Typ
Max
Units
V
µA
nA
V
A
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Q
g
(10V) Total Gate Charge
Q
g
(4.5V) Total Gate Charge
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=30A, dI/dt=100A/µs
A: The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
Power dissipation P
DSM
is based on R
θJA
and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation P
D
is based on T
J(MAX)
=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=175°C.
D. The R
θJA
is the sum of the thermal impedence from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
µs
pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T
J(MAX)
=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA
curve provides a single pulse rating.
Rev 0 : Aug 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AOB436
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
4.5V
I
D
(A)
60
40
20
0
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
V
GS
=3.5
I
D
(A)
4.0V
6V
5V
10V
60
50
40
30
20
10
0
1
2
3
4
5
V
GS
(Volts)
Figure 2: Transfer Characteristics
125°C
25°C
V
DS
=5V
4.63
494
692
593
830
12
10
R
DS(ON)
(m
Ω
)
8
6
4
2
0
10
20
30
40
50
60
Normalized On-Resistance
V
GS
=4.5V
1.8
1.6
193
18
V
GS
=10V, 30A
1.4
1.2
1
0.8
0
25
50
75
V
GS
=4.5V, 30A
V
GS
=10V
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
59
142
100
125
150
175
16
14
R
DS(ON)
(m
Ω
)
12
10
8
6
4
3
4
5
6
7
8
9
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
25°C
I
D
=30A
125°C
100
10
1
I
S
(A)
0.1
0.01
0.001
0.0001
0.00001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
25°C
125°C
Alpha & Omega Semiconductor, Ltd.
AOB436
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
V
GS
(Volts)
6
4
2
0
0
5
10
15
20
25
30
35
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
1000
V
DS
=12.5V
I
D
=30A
3000
2500
Capacitance (pF)
C
iss
2000
1500
1000
500
C
rss
0
0
10
15
20
V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
25
C
oss
4.63
494
692
593
830
193
18
T
J(Max)
=175°C, T
A
=25°C
10µs
Power (W)
100µs
200
160
120
80
40
0
0.0001
T
J(Max)
=175°C
T
A
=25°C
100
I
D
(Amps)
10
R
DS(ON)
limited
DC
1ms
1
0.1
0.1
1
V
DS
(Volts)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note E)
10
100
0.001
0.01
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
59
0.1
142
1
10
10
Z
θ
JC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
R
θJC
=3°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
D
T
on
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
AOB436
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
I
D
(A), Peak Avalanche Current
50
40
30
20
10
0.000001
0.00001
0.0001
0.001
Time in avalanche, t
A
(s)
Figure 12: Single Pulse Avalanche capability
T
A
=25°C
60
Power Dissipation (W)
t
A
=
L
⋅
I
D
BV
−
V
DD
50
40
30
20
10
0
0
25
50
75
100
125
150
175
TCASE (°C)
Figure 13: Power De-rating (Note B)
4.63
494
692
593
830
60
50
Current rating I
D
(A)
40
30
20
10
0
0
25
50
75
100
125
150
175
T
CASE
(°C)
Figure 14: Current De-rating (Note B)
50
40
Power (W)
193
18
T
A
=25°C
30
20
10
0
0.01
0.1
1
59
142
10
100
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
Z
θ
JA
Normalized Transient
Thermal Resistance
Single Pulse
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=50°C/W
P
D
T
on
0.01
T
100
1000
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
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