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BR25L640FJ-W: 产品描述SPI BUS 64Kbit (8,192 x 8bit) EEPROM; 产品类别存储存储; 文件大小283KB，共6页; 制造商ROHM(罗姆半导体); 官网地址https://www.rohm.com/; 标准

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BR25L640FJ-W概述

SPI BUS 64Kbit (8,192 x 8bit) EEPROM

BR25L640FJ-W规格参数

参数名称	属性值
是否无铅	不含铅
是否Rohs认证	符合
厂商名称	ROHM(罗姆半导体)
零件包装代码	SOIC
包装说明	SOP,
针数	8
Reach Compliance Code	compliant
ECCN代码	EAR99
最大时钟频率 (fCLK)	5 MHz
JESD-30 代码	R-PDSO-G8
JESD-609代码	e2
长度	4.9 mm
内存密度	65536 bit
内存集成电路类型	EEPROM
内存宽度	8
功能数量	1
端子数量	8
字数	8192 words
字数代码	8000
工作模式	SYNCHRONOUS
最高工作温度	85 °C
最低工作温度	-40 °C
组织	8KX8
封装主体材料	PLASTIC/EPOXY
封装代码	SOP
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
并行/串行	SERIAL
峰值回流温度（摄氏度）	NOT SPECIFIED
认证状态	Not Qualified
串行总线类型	SPI
最大供电电压 (Vsup)	5.5 V
最小供电电压 (Vsup)	1.8 V
标称供电电压 (Vsup)	2.5 V
表面贴装	YES
技术	CMOS
温度等级	INDUSTRIAL
端子面层	Tin/Copper (Sn/Cu)
端子形式	GULL WING
端子节距	1.27 mm
端子位置	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED
宽度	3.9 mm
最长写入周期时间 (tWC)	5 ms
Base Number Matches	1

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Appendix

Notes

No technical content pages of this document may be reproduced in any form or transmitted by any

means without prior permission of ROHM CO.,LTD.

The contents described herein are subject to change without notice. The specifications for the

product described in this document are for reference only. Upon actual use, therefore, please request

that specifications to be separately delivered.

Application circuit diagrams and circuit constants contained herein are shown as examples of standard

use and operation. Please pay careful attention to the peripheral conditions when designing circuits

and deciding upon circuit constants in the set.

Any data, including, but not limited to application circuit diagrams information, described herein

are intended only as illustrations of such devices and not as the specifications for such devices. ROHM

CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any

third party's intellectual property rights or other proprietary rights, and further, assumes no liability of

whatsoever nature in the event of any such infringement, or arising from or connected with or related

to the use of such devices.

Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or

otherwise dispose of the same, no express or implied right or license to practice or commercially

exploit any intellectual property rights or other proprietary rights owned or controlled by

ROHM CO., LTD. is granted to any such buyer.

Products listed in this document are no antiradiation design.

The products listed in this document are designed to be used with ordinary electronic equipment or devices

(such as audio visual equipment, office-automation equipment, communications devices, electrical

appliances and electronic toys).

Should you intend to use these products with equipment or devices which require an extremely high level of

reliability and the malfunction of with would directly endanger human life (such as medical instruments,

transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other

safety devices), please be sure to consult with our sales representative in advance.

About Export Control Order in Japan

Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control

Order in Japan.

In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)

on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.1

BR25L640FJ-W相似产品对比

	BR25L640FJ-W	BR25L640F-W
描述	SPI BUS 64Kbit (8,192 x 8bit) EEPROM	SPI BUS 64Kbit (8,192 x 8bit) EEPROM
是否无铅	不含铅	不含铅
是否Rohs认证	符合	符合
厂商名称	ROHM(罗姆半导体)	ROHM(罗姆半导体)
零件包装代码	SOIC	SOIC
包装说明	SOP,	LSOP, SOP8,.25
针数	8	8
Reach Compliance Code	compliant	compliant
ECCN代码	EAR99	EAR99
最大时钟频率 (fCLK)	5 MHz	5 MHz
JESD-30 代码	R-PDSO-G8	R-PDSO-G8
JESD-609代码	e2	e2
长度	4.9 mm	5 mm
内存密度	65536 bit	65536 bit
内存集成电路类型	EEPROM	EEPROM
内存宽度	8	8
功能数量	1	1
端子数量	8	8
字数	8192 words	8192 words
字数代码	8000	8000
工作模式	SYNCHRONOUS	SYNCHRONOUS
最高工作温度	85 °C	85 °C
最低工作温度	-40 °C	-40 °C
组织	8KX8	8KX8
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	SOP	LSOP
封装形状	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE, LOW PROFILE
并行/串行	SERIAL	SERIAL
峰值回流温度（摄氏度）	NOT SPECIFIED	260
认证状态	Not Qualified	Not Qualified
串行总线类型	SPI	SPI
最大供电电压 (Vsup)	5.5 V	5.5 V
最小供电电压 (Vsup)	1.8 V	1.8 V
标称供电电压 (Vsup)	2.5 V	2.5 V
表面贴装	YES	YES
技术	CMOS	CMOS
温度等级	INDUSTRIAL	INDUSTRIAL
端子面层	Tin/Copper (Sn/Cu)	Tin/Copper (Sn/Cu)
端子形式	GULL WING	GULL WING
端子节距	1.27 mm	1.27 mm
端子位置	DUAL	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED	10
宽度	3.9 mm	4.4 mm
最长写入周期时间 (tWC)	5 ms	5 ms
Base Number Matches	1	1

BR25L640FJ-W

BR25L640FJ-W概述

BR25L640FJ-W规格参数

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BR25L640FJ-W相似产品对比

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