PGSMAJ10A - PGSMAJ100A
Taiwan Semiconductor
400W, 10V - 100V Surface Mount Transient Voltage Suppressor
FEATURES
AEC-Q101 qualified
Low profile package
Photo Glass passivated junction
Excellent clamping capability
Moisture sensitivity level: level 1, per J-STD-020
400 watts peak pulse power capability with a 10 / 1000 μs
waveform (300W above 78V)
● Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
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●
●
●
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KEY PARAMETERS
PARAMETER
V
WM
V
BR
T
J MAX
Package
Configuration
VALUE
10 - 100
11.7 - 117
175
UNIT
V
V
°C
DO-214AC (SMA)
Single die
APPLICATIONS
●
●
●
●
Switching mode power supply (SMPS)
Adapters
Lighting application
On-board DC/DC converter
MECHANICAL DATA
●
●
●
●
●
●
Case: DO-214AC (SMA)
Molding compound meets UL 94V-0 flammability rating
Terminal: Matte tin plated leads, solderable per J-STD-002
Meet JESD 201 class 2 whisker test
Polarity: As marked
Weight: 0.06 g (approximately)
DO-214AC (SMA)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Peak power dissipation (Note 1)
Steady state power dissipation
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage at 25 A for
unidirectional only
Operating junction temperature range
Storage temperature range
SYMBOL
P
PPM
P
D
I
FSM
V
F
T
J
T
STG
VALUE
400
1
40
3.5
-55 to +175
-55 to +175
UNIT
W
W
A
V
°C
°C
Notes:
1. Non-repetitive Current Pulse Per Fig.3 and derated above T
A
=25°C Per Fig.2. Rating is 300 W for V
WM
> 78 V
Devices for Bi-directional Applications
1. For Bi-directional use CA suffix (e.g. PGSMAJ10CA).
2. Electrical Characteristics Apply in Both Directions
1
Version:B1805
PGSMAJ10A - PGSMAJ100A
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
Junction-to-lead thermal resistance per diode
Junction-to-ambient thermal resistance per diode
Junction-to-case thermal resistance per diode
SYMBOL
R
ӨJL
R
ӨJA
R
ӨJC
TYP.
29
120
31
UNIT
°C/W
°C/W
°C/W
Thermal Performance Note: Units mounted on PCB (5mm x 5mm Cu pad test board)
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
Breakdown
voltage
V
BR
@I
T
(V)
(Note 1)
Min.
11.1
12.2
13.3
14.4
15.6
16.7
17.8
18.9
20.0
22.2
24.4
26.7
28.9
31.1
33.3
36.7
40.0
44.4
47.8
50.0
53.3
56.7
60.0
64.4
66.7
71.1
77.8
83.3
86.7
94.4
100
111
Max.
12.30
13.50
14.70
15.90
17.20
18.50
19.70
20.90
22.10
24.50
26.90
29.50
31.90
34.40
36.8
40.6
44.2
49.1
52.8
55.3
58.9
62.7
66.3
71.2
73.7
78.6
86
92.1
95.8
104
111
123
Working
stand-off
voltage
V
WM
(V)
Maximum reverse
leakage current
I
R
@V
WM
(µA)
(Note 1)
Maximum peak
impulse current
I
PPM
(A)
tp =10/1000 μs
Maximum clamping
voltage
V
C
@I
PPM
(V)
tp =10/1000 μs
Part number
Marking
code
Test current
I
T
(mA)
PGSMAJ10A
PGSMAJ11A
PGSMAJ12A
PGSMAJ13A
PGSMAJ14A
PGSMAJ15A
PGSMAJ16A
PGSMAJ17A
PGSMAJ18A
PGSMAJ20A
PGSMAJ22A
PGSMAJ24A
PGSMAJ26A
PGSMAJ28A
PGSMAJ30A
PGSMAJ33A
PGSMAJ36A
PGSMAJ40A
PGSMAJ43A
PGSMAJ45A
PGSMAJ48A
PGSMAJ51A
PGSMAJ54A
PGSMAJ58A
PGSMAJ60A
PGSMAJ64A
PGSMAJ70A
PGSMAJ75A
PGSMAJ78A
PGSMAJ85A
PGSMAJ90A
PGSMAJ100A
Notes:
PAX
PAZ
PBE
PBG
PBK
PBM
PBP
PBR
PBT
PBV
PBX
PBZ
PCE
PCG
PCK
PCM
PCP
PCR
PCT
PCV
PCX
PCZ
PRE
PRG
PRK
PRM
PRP
PRR
PRT
PRV
PRX
PRZ
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
10
11
12
13
14
15
16
17
18
20
22
24
26
28
30
33
36
40
43
45
48
51
54
58
60
64
70
75
78
85
90
100
5
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
23.5
22.0
20.1
18.6
17.2
16.4
15.4
14.5
13.7
12.3
11.3
10.3
9.5
8.8
8.3
7.5
6.9
6.2
5.8
5.5
5.2
4.9
4.6
4.3
4.1
3.9
3.5
3.3
3.2
2.2
2.1
1.9
17.0
18.2
19.9
21.5
23.2
24.4
26.0
27.6
29.2
32.4
35.5
38.9
42.1
45.4
48.4
53.3
58.1
64.5
69.4
72.7
77.4
82.4
87.1
93.6
96.8
103
113
121
126
137
146
162
1. Non-repetitive current pulse, per Fig. 3 and derated above TA=25°C per Fig. 2
2. Mounted on 5 x 5mm copper pads to each terminal
3. Lead temperature at T
L
=75°C
4. Measure on 8.3ms single half sine-wave duty cycle=4 pulses per minutes maximum
5. Peak pulse power waveform is 10/1000 μs
2
Version:B1805
PGSMAJ10A - PGSMAJ100A
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.1 Peak Pulse Power Rating Curve
100
P
PPM
, PEAK PULSE POWER (KW)
PEAK PULSE POWER (P
PPM
) OR CURRENT(I
PP
)
DERATING IN PERCENTAGE (%)
100
Fig.2 Pulse Derating Curve
Non-Repetitive Pulse
Waveform Shown in Fig.3
T
A
=25°C
10
PGSMAJ10A - PGSMAJ78A
75
50
1
PGSMAJ85A - PGSMAJ100A
25
0.1
0
1
10
100
1000
10000
0
0
25
50
75
100
125
150
175
t
d
- PULSE WIDTH (μs)
T
J
- INITIAL JUNCTION TEMPERATURE (°C)
Fig.3 Clamping Power Pulse Waveform
1000
140
120
PEAK PULSE CURRENT (%)
100
Rise time tr=10μs to 100%
80
60
40
20
0
0
0.5
1
1.5
t, TIME (ms)
2
2.5
3
td
1
1
Half value-I
PPM
/2
10/1000μs, waveform
as defined by R.E.A.
Peak value
I
PPM
Pulse width(td) is defined
as the point where the peak
current decays to 50% of I
PPM
CAPACITANCE (pF)
Fig.4 Typical Junction Capacitance
PGSMAJ10A
100
PGSMAJ40A
10
f=1.0MHz
Vsig=50mVp-p
10
REVERSE VOLTAGE (V)
100
4
Version:B1805
FPGA/CPLD
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