SiHW61N65EF
www.vishay.com
Vishay Siliconix
E Series Power MOSFET with Fast Body Diode
PRODUCT SUMMARY
V
DS
(V) at T
J
max.
R
DS(on)
typ. at 25 °C ()
Q
g
max. (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
371
65
93
Single
700
0.041
FEATURES
• Fast body diode MOSFET using E series
technology
• Reduced t
rr
, Q
rr
, and I
RRM
• Low figure-of-merit (FOM) R
on
x Q
g
• Low input capacitance (C
iss
)
• Low switching losses due to reduced Q
rr
• Ultra low gate charge (Q
g
)
• Avalanche energy rated (UIS)
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
D
APPLICATIONS
TO-247AD
G
G
D
S
S
N-Channel MOSFET
• Telecommunications
- Server and telecom power supplies
• Lighting
- High-intensity lighting (HID)
- Light emitting diodes (LEDs)
• Consumer and computing
- ATX power supplies
• Industrial
- Welding
- Battery chargers
• Renewable energy
- Solar (PV inverters)
• Switching mode power supplies (SMPS)
• Applications using the following topologies
- LLC
- Phase shifted bridge (ZVS)
- 3-level inverter
- AC/DC bridge
ORDERING INFORMATION
Package
Lead (Pb)-Free and Halogen-Free
TO-247AD
SiHW61N65EF-GE3
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
Pulsed Drain Current
a
Linear Derating Factor
Single Pulse Avalanche
Energy
b
E
AS
P
D
T
J
, T
stg
T
J
= 125 °C
For 10 s
dV/dt
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Drain-Source Voltage Slope
Reverse Diode dV/dt
d
Soldering Recommendations (Peak temperature)
c
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. V
DD
= 140 V, starting T
J
= 25 °C, L = 28.2 mH, R
g
= 25
,
I
AS
= 9 A.
c. 1.6 mm from case.
d. I
SD
I
D
, dI/dt = 500 A/μs, starting T
J
= 25 °C.
S17-0296-Rev. B, 27-Feb-17
Document Number: 91878
1
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
LIMIT
650
± 30
64
41
199
4.2
1142
520
-55 to +150
70
50
300
W/°C
mJ
W
°C
V/ns
°C
A
UNIT
V
SiHW61N65EF
www.vishay.com
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
SYMBOL
R
thJA
R
thJC
TYP.
-
-
MAX.
40
0.24
UNIT
°C/W
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage (N)
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance, Energy
Related
a
Effective Output Capacitance, Time
Related
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Input Resistance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
S
I
SM
V
SD
t
rr
Q
rr
I
RRM
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
SYMBOL
V
DS
V
DS
/T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
C
o(er)
TEST CONDITIONS
V
GS
= 0 V, I
D
= 250 μA
Reference to 25 °C, I
D
= 10 mA
V
DS
= V
GS
, I
D
= 250 μA
V
GS
= ± 20 V
V
GS
= ± 30 V
V
DS
= 520 V, V
GS
= 0 V
V
DS
= 520 V, V
GS
= 0 V, T
J
= 125 °C
V
GS
= 10 V
I
D
= 30.5 A
V
DS
= 30 V, I
D
= 30.5 A
MIN.
650
-
2.0
-
-
-
-
-
-
-
-
-
-
TYP.
-
0.81
-
-
-
-
-
0.041
23
7407
351
3
233
939
247
65
93
59
107
217
133
1
MAX.
-
-
4.0
± 100
±1
1
500
0.047
-
-
-
-
UNIT
V
V/°C
V
nA
μA
μA
S
V
GS
= 0 V,
V
DS
= 100 V,
f = 1 MHz
pF
-
-
371
-
-
89
161
326
200
2
ns
nC
V
DS
= 0 V to 520 V, V
GS
= 0 V
C
o(tr)
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
R
g
f = 1 MHz, open drain
V
DD
= 520 V, I
D
= 30.5 A,
V
GS
= 10 V, R
g
= 9.1
V
GS
= 10 V
I
D
= 30.5 A, V
DS
= 520 V
-
-
-
-
-
-
-
-
0.5
-
-
-
-
-
-
-
-
0.9
212
2.1
18
64
A
199
1.2
474
3.8
-
V
ns
μC
A
G
S
T
J
= 25 °C, I
S
= 30.5 A, V
GS
= 0 V
T
J
= 25 °C, I
F
= I
S
= 30.5 A,
dI/dt = 100 A/μs, V
R
= 400 V
Notes
a. C
oss(er)
is a fixed capacitance that gives the same energy as C
oss
while V
DS
is rising from 0 % to 80 % V
DSS
.
b. C
oss(tr)
is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 % to 80 % V
DSS
.
S17-0296-Rev. B, 27-Feb-17
Document Number: 91878
2
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiHW61N65EF
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
200
TOP
Vishay Siliconix
3.0
R
DS(on)
, Drain-to-Source On-Resistance
(Normalized)
15 V
14 V
13 V
12 V
11 V
10 V
9V
8V
7V
6V
BOTTOM 5 V
T
J
= 25 °C
2.5
I
D
= 30.5 A
I
D
, Drain-to-Source Current (A)
150
2.0
100
1.5
1.0
V
GS
= 10 V
0.5
50
0
0
5
10
15
20
V
DS
, Drain-to-Source Voltage (V)
0
-60 -40 -20
0
20
40
60
80 100 120 140 160
T
J
, Junction Temperature (°C)
Fig. 1 - Typical Output Characteristics
120
TOP
15 V
14 V
13 V
12 V
11 V
10 V
9V
8V
7V
6V
BOTTOM 5 V
Fig. 4 - Normalized On-Resistance vs. Temperature
100 000
T
J
= 150 °C
10 000
C
iss
V
GS
= 0 V, f = 1 MHz
C
iss
= C
gs
+ C
gd
, C
ds
shorted
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
I
D
, Drain-to-Source Current (A)
90
C, Capacitance (pF)
1000
C
oss
100
C
rss
60
10
30
1
0
0
5
10
15
20
V
DS
, Drain-to-Source Voltage (V)
0.1
0
100
200
300
400
500
600
V
DS
, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
250
T
J
= 25 °C
I
D
, Drain-to-Source Current (A)
200
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
45
5000
40
35
30
C
oss
(pF)
150
25
20
15
C
oss
500
100
T
J
= 150 °C
50
V
DS
= 19.2 V
0
0
5
10
15
20
25
V
GS
,
Gate-to-Source
Voltage (V)
10
5
50
0
100
200
300
V
DS
400
500
600
0
Fig. 3 - Typical Transfer Characteristics
S17-0296-Rev. B, 27-Feb-17
Fig. 6 - C
oss
and E
oss
vs. V
DS
Document Number: 91878
3
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
E
oss
(μJ)
E
oss
SiHW61N65EF
www.vishay.com
Vishay Siliconix
24
V
DS
= 520 V
V
DS
= 325 V
V
DS
= 130 V
I
D
, Drain Current (A)
60
V
GS
,
Gate-to-Source
Voltage (V)
20
16
40
12
8
20
4
0
0
90
180
270
360
450
25
50
75
100
125
150
T
C
, Case Temperature (°C)
0
Q
g
, Total
Gate
Charge (nC)
Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 10 - Maximum Drain Current vs. Case Temperature
850
V
DS
, Drain-to-Source Breakdown Voltage (V)
100
I
SD
, Reverse Drain Current (A)
T
J
= 150 °C
825
800
775
750
725
700
675
I
D
= 10 mA
650
-60 -40 -20
0
20
40
60
80 100 120 140 160
10
T
J
= 25 °C
1
V
GS
= 0 V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V
SD
,
Source-Drain
Voltage (V)
T
J
, Junction Temperature (°C)
Fig. 8 - Typical Source-Drain Diode Forward Voltage
Fig. 11 - Temperature vs. Drain-to-Source Voltage
Operation in this Area
Limited by R
DS(on)
100
I
D
, Drain Current (A)
Limited by R
DS(on)
*
10
I
DM
Limited
100 μs
1 ms
1
T
C
= 25
°C
T
J
= 150 °C
Single
Pulse
0.1
1
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is
specified
10 ms
BVDSS Limited
Fig. 9 - Maximum Safe Operating Area
S17-0296-Rev. B, 27-Feb-17
Document Number: 91878
4
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiHW61N65EF
www.vishay.com
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
Vishay Siliconix
0.2
0.1
0.1
0.05
0.02
Single
Pulse
0.01
0.0001
0.001
0.01
Pulse Time (s)
0.1
1
Fig. 12 - Normalized Thermal Transient Impedance, Junction-to-Case
R
D
V
DS
V
GS
R
G
V
DS
t
p
V
DD
+
-
V
DD
D.U.T.
V
DS
10 V
Pulse width
≤
1 µs
Duty factor
≤
0.1 %
I
AS
Fig. 16 - Unclamped Inductive Waveforms
Fig. 13 - Switching Time Test Circuit
V
DS
90 %
10 V
Q
GS
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GD
V
G
Charge
Fig. 14 - Switching Time Waveforms
Fig. 17 - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
50 kΩ
L
Vary t
p
to obtain
required I
AS
R
G
V
DS
D.U.T
I
AS
+
-
12 V
0.2 µF
0.3 µF
V
DD
+
D.U.T.
-
V
DS
10 V
t
p
0.01
Ω
V
GS
3 mA
Fig. 15 - Unclamped Inductive Test Circuit
I
G
I
D
Current sampling resistors
Fig. 18 - Gate Charge Test Circuit
S17-0296-Rev. B, 27-Feb-17
Document Number: 91878
5
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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