SRAM 1.8/2.5V 512K x 18 9M
参数名称 | 属性值 |
是否无铅 | 不含铅 |
是否Rohs认证 | 符合 |
厂商名称 | GSI Technology |
零件包装代码 | QFP |
包装说明 | LQFP, |
针数 | 100 |
Reach Compliance Code | compliant |
ECCN代码 | 3A991.B.2.B |
Factory Lead Time | 8 weeks |
最长访问时间 | 6.5 ns |
其他特性 | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY |
JESD-30 代码 | R-PQFP-G100 |
JESD-609代码 | e3 |
长度 | 20 mm |
内存密度 | 9437184 bit |
内存集成电路类型 | CACHE SRAM |
内存宽度 | 18 |
湿度敏感等级 | 3 |
功能数量 | 1 |
端子数量 | 100 |
字数 | 524288 words |
字数代码 | 512000 |
工作模式 | SYNCHRONOUS |
最高工作温度 | 70 °C |
最低工作温度 | |
组织 | 512KX18 |
封装主体材料 | PLASTIC/EPOXY |
封装代码 | LQFP |
封装形状 | RECTANGULAR |
封装形式 | FLATPACK, LOW PROFILE |
并行/串行 | PARALLEL |
峰值回流温度(摄氏度) | 260 |
认证状态 | Not Qualified |
座面最大高度 | 1.6 mm |
最大供电电压 (Vsup) | 2 V |
最小供电电压 (Vsup) | 1.7 V |
标称供电电压 (Vsup) | 1.8 V |
表面贴装 | YES |
技术 | CMOS |
温度等级 | COMMERCIAL |
端子面层 | Matte Tin (Sn) |
端子形式 | GULL WING |
端子节距 | 0.65 mm |
端子位置 | QUAD |
处于峰值回流温度下的最长时间 | NOT SPECIFIED |
宽度 | 14 mm |
GS88018CGT-200V | GS88032CGT-200V | GS88036CGT-250V | GS88018CGT-150V | GS88036CGT-150V | GS88032CGT-250V | |
---|---|---|---|---|---|---|
描述 | SRAM 1.8/2.5V 512K x 18 9M | SRAM 1.8/2.5V 256K x 32 8M | SRAM 1.8/2.5V 256K x 36 9M | SRAM 1.8/2.5V 512K x 18 9M | 静态随机存取存储器 1.8/2.5V 256K x 36 9M | 静态随机存取存储器 1.8/2.5V 256K x 32 8M |
是否无铅 | 不含铅 | 不含铅 | 不含铅 | 不含铅 | 不含铅 | 不含铅 |
是否Rohs认证 | 符合 | 符合 | 符合 | 符合 | 符合 | 符合 |
厂商名称 | GSI Technology | GSI Technology | GSI Technology | GSI Technology | GSI Technology | GSI Technology |
零件包装代码 | QFP | QFP | QFP | QFP | QFP | QFP |
包装说明 | LQFP, | LQFP, | LQFP, | LQFP, | LQFP, | LQFP, |
针数 | 100 | 100 | 100 | 100 | 100 | 100 |
Reach Compliance Code | compliant | compliant | compliant | compliant | compliant | compliant |
ECCN代码 | 3A991.B.2.B | 3A991.B.2.B | 3A991.B.2.B | 3A991.B.2.B | 3A991.B.2.B | 3A991.B.2.B |
Factory Lead Time | 8 weeks | 8 weeks | 8 weeks | 8 weeks | 8 weeks | 8 weeks |
最长访问时间 | 6.5 ns | 6.5 ns | 5.5 ns | 7.5 ns | 7.5 ns | 5.5 ns |
其他特性 | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY |
JESD-30 代码 | R-PQFP-G100 | R-PQFP-G100 | R-PQFP-G100 | R-PQFP-G100 | R-PQFP-G100 | R-PQFP-G100 |
JESD-609代码 | e3 | e3 | e3 | e3 | e3 | e3 |
长度 | 20 mm | 20 mm | 20 mm | 20 mm | 20 mm | 20 mm |
内存密度 | 9437184 bit | 8388608 bit | 9437184 bit | 9437184 bit | 9437184 bit | 8388608 bit |
内存集成电路类型 | CACHE SRAM | CACHE SRAM | CACHE SRAM | CACHE SRAM | CACHE SRAM | CACHE SRAM |
内存宽度 | 18 | 32 | 36 | 18 | 36 | 32 |
湿度敏感等级 | 3 | 3 | 3 | 3 | 3 | 3 |
功能数量 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 100 | 100 | 100 | 100 | 100 | 100 |
字数 | 524288 words | 262144 words | 262144 words | 524288 words | 262144 words | 262144 words |
字数代码 | 512000 | 256000 | 256000 | 512000 | 256000 | 256000 |
工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
最高工作温度 | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C |
组织 | 512KX18 | 256KX32 | 256KX36 | 512KX18 | 256KX36 | 256KX32 |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装代码 | LQFP | LQFP | LQFP | LQFP | LQFP | LQFP |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | FLATPACK, LOW PROFILE | FLATPACK, LOW PROFILE | FLATPACK, LOW PROFILE | FLATPACK, LOW PROFILE | FLATPACK, LOW PROFILE | FLATPACK, LOW PROFILE |
并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
峰值回流温度(摄氏度) | 260 | 260 | 260 | 260 | 260 | 260 |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
座面最大高度 | 1.6 mm | 1.6 mm | 1.6 mm | 1.6 mm | 1.6 mm | 1.6 mm |
最大供电电压 (Vsup) | 2 V | 2 V | 2 V | 2 V | 2 V | 2 V |
最小供电电压 (Vsup) | 1.7 V | 1.7 V | 1.7 V | 1.7 V | 1.7 V | 1.7 V |
标称供电电压 (Vsup) | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V |
表面贴装 | YES | YES | YES | YES | YES | YES |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
温度等级 | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
端子面层 | Matte Tin (Sn) | Matte Tin (Sn) | Matte Tin (Sn) | Matte Tin (Sn) | Matte Tin (Sn) | Matte Tin (Sn) |
端子形式 | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING |
端子节距 | 0.65 mm | 0.65 mm | 0.65 mm | 0.65 mm | 0.65 mm | 0.65 mm |
端子位置 | QUAD | QUAD | QUAD | QUAD | QUAD | QUAD |
处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
宽度 | 14 mm | 14 mm | 14 mm | 14 mm | 14 mm | 14 mm |
电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved