NSDEMN11XV6T1,
NSDEMN11XV6T5
Common Cathode Quad
Array Switching Diode
This Common Cathode Epitaxial Planar Quad Diode is designed for
use in ultra high speed switching applications. This device is housed in
the SOT−563 package which is designed for low power surface mount
applications, where board space is at a premium.
Features
http://onsemi.com
(3)
(2)
(1)
•
Fast t
rr
•
Low C
D
•
Pb−Free Packages are Available
MAXIMUM RATINGS
(T
A
= 25°C)
Rating
Reverse Voltage
Peak Reverse Voltage
Forward Current
Peak Forward Current
Peak Forward Surge Current
Symbol
V
R
V
RM
I
F
I
FM
I
FSM
(Note 1)
Value
80
80
100
300
2.0
Unit
Vdc
Vdc
1
mAdc
mAdc
Adc
SOT−563
CASE 463A
PLASTIC
(4)
(5)
(6)
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Total Device Dissipation @T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction-to-Ambient
Characteristic
(Both Junctions Heated)
Total Device Dissipation @T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction-to-Ambient
Junction and Storage Temperature
R
qJA
T
J
, T
stg
R
qJA
Symbol
P
D
Max
357
(Note 2)
2.9
(Note 2)
350
(Note 2)
Max
500
(Note 2)
4.0
(Note 2)
250
(Note 2)
−55 to +150
Unit
mW
mW/°C
°C/W
MARKING DIAGRAM
N9 M
G
G
1
Symbol
P
D
Unit
mW
mW/°C
°C/W
°C
N9 = Specific Device Code
M = Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NSDEMN11XV6T1
Package
Shipping
†
SOT−563 4000/Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. t = 1
mS
2. FR−4 @ Minimum Pad
NSDEMN11XV6T1G SOT−563 4000/Tape & Reel
(Pb−Free)
NSDEMN11XV6T5
SOT−563 8000/Tape & Reel
NSDEMN11XV6T5G SOT−563 8000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2006
1
May, 2006 − Rev. 2
Publication Order Number:
NSDEMN11XV6T1/D
NSDEMN11XV6T1, NSDEMN11XV6T5
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
Characteristic
Reverse Voltage Leakage Current
Forward Voltage
Reverse Breakdown Voltage
Diode Capacitance
Reverse Recovery Time
3. t
rr
Test Circuit on following page.
Symbol
I
R
V
F
V
R
C
D
t
rr
(Note 3)
Condition
V
R
= 70 V
I
F
= 100 mA
I
R
= 100
mA
V
R
= 6.0 V, f = 1.0 MHz
I
F
= 5.0 mA, V
R
= 6.0 V, R
L
= 100
W,
I
rr
= 0.1 I
R
Min
−
−
80
−
−
Max
0.1
1.2
−
3.5
4.0
Unit
mAdc
Vdc
Vdc
pF
ns
TYPICAL ELECTRICAL CHARACTERISTICS
100
IF, FORWARD CURRENT (mA)
T
A
= 85°C
10
T
A
= −40°C
IR , REVERSE CURRENT (μA)
10
T
A
= 150°C
T
A
= 125°C
1.0
0.1
T
A
= 85°C
T
A
= 55°C
1.0
T
A
= 25°C
0.01
T
A
= 25°C
0
10
20
30
40
V
R
, REVERSE VOLTAGE (VOLTS)
50
0.1
0.2
0.4
0.6
0.8
1.0
V
F
, FORWARD VOLTAGE (VOLTS)
1.2
0.001
Figure 1. Forward Voltage
Figure 2. Reverse Current
1.0
CD, DIODE CAPACITANCE (pF)
0.9
0.8
0.7
0.6
0
2
4
6
8
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 3. Diode Capacitance
http://onsemi.com
2
NSDEMN11XV6T1, NSDEMN11XV6T5
PACKAGE DIMENSIONS
SOT−563, 6 LEAD
CASE 463A−01
ISSUE F
D
−X−
A
L
4
6
5
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.
MILLIMETERS
MIN
NOM MAX
0.50
0.55
0.60
0.17
0.22
0.27
0.08
0.12
0.18
1.50
1.60
1.70
1.10
1.20
1.30
0.5 BSC
0.10
0.20
0.30
1.50
1.60
1.70
INCHES
NOM MAX
0.021 0.023
0.009 0.011
0.005 0.007
0.062 0.066
0.047 0.051
0.02 BSC
0.004 0.008 0.012
0.059 0.062 0.066
MIN
0.020
0.007
0.003
0.059
0.043
1
2
3
E
−Y−
H
E
DIM
A
b
C
D
E
e
L
H
E
b
e
5
6 PL
M
C
X Y
0.08 (0.003)
SOLDERING FOOTPRINT*
0.3
0.0118
0.45
0.0177
1.0
0.0394
1.35
0.0531
0.5
0.5
0.0197 0.0197
SCALE 20:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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Sales Representative
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NSDEMN11XV6T1/D