®
PKC-136
PEAK CLAMP
Application Specific Discretes
ASD™
MAIN PRODUCT CHARACTERISTICS
V
BR
V
DRM
P
160Vdc
700Vdc
1.5W
FEATURES
Protection of the Mosfet in flyback power supply
TRANSIL™ and blocking diode in a single
package
s
s
BENEFITS
Accurate voltage clamping regardless load
Reduced current loop
Reduced EMI emission
High integration
Fast assembly
Reduced losses in stand by mode
s
s
s
s
s
s
DO-15
BASIC CONNECTION
Lf
T
D
Io
Vo
ABSOLUTE MAXIMUM RATINGS
(limiting values)
Symbol
T
stg
T
j
P
Storage temperature
Junction temperature
Maximum power dissipation T°lead = 90°C
Parameter
Value
- 40 to + 150
150
1.5
Unit
°C
°C
W
August 2001 - Ed: 2A
1/5
PKC-136
ELECTRICAL CHARACTERISTICS TRANSIL
Value
Symbol
I
RM
V
BR
R
d
Parameter
Leakage current
Breakdown voltage
Dynamical Resistance
Test conditions
Min.
V
R
= 136V
I
R
= 1mA
pulse test < 50ms
tp < 500ns
between I = 0.5Amps
and I = 1.5Amps
T
j
= 25°C
T
j
=125°C
T
j
= 25°C
T
j
= 125°C
Typ.
Max.
1
10
170
4
µA
V
Ω
Unit
150
160
αT
V
sCL
Temperature
Coefficient
Surge Clamping
voltage
Ipp = 2.7Amps
10/1000µs
10.8
219
10
-4
/°C
V
CALCULATION OF THE CLAMPING VOLTAGE:
In repetitive mode and for low current rating, use the equation (1) and (2) to calculate the breakdown
voltage V
BR
of the transil versus the operating junction temperature and use the equation (3) to calculate
the clamping voltage versus the transil current Ipp and the temperature.
∆
V
BR
= α
T
(
T
j
−
25 )
V
BR
( 25
°
C
) (1)
V
BR
(
T
j
)
=
V
BR
( 25
°
C
)
+ ∆
V
BR
V
CL
(
T
j
)
=
V
BR
(
T
j
)
+
Rd
.
Ipp
(2)
(3)
ELECTRICAL CHARACTERISTICS DIODE
(Tj = 25°C unless otherwise specified)
Symbol
I
R
V
RRM
trr
V
FP
Parameter
Reverse leakage current
Repetitive Peak Reverse
Voltage
Reverse Recovery Time
Peak Forward Voltage
Tests conditions
V
R
= V
RRM
T
j
= 25°C
I
F
= 1A dI
F
/ dt = -50A/µs
V
R
= 30V
I
F
= 3A
dI
F
/ dt = 100A/µs
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
700
45
12
18
3
Value
Min.
Typ.
Max.
3
20
V
ns
V
Unit
µA
CAPACITANCE
Symbol
C
Parameter
Total Parasitic capacitance 1MHz 30mV
Typical Value
35
Unit
pF
2/5
PKC-136
THERMAL RESISTANCES
Symbol
R
th(j-l)
R
th(j-a)
Junction to leads
Parameter
L = 10mm
Value
40
105
Unit
°C/W
°C/W
Junction to ambiant condition see note 1
Note 1:
Device mounted on a epoxy FR4 board of 35µm thickness
Lead Length: 10mm
Pad diameter: 4mm
Track width: 1mm
Track length: 25mm
The Rth
(j-a)
can be reduced by replacing the Cu track by plan:
S(Cu) = 1.5cm
2
/lead R
th(j-a)
= 65°C/W
S(Cu) = 3.5cm
2
/lead R
th(j-a)
= 60°C/W
Fig. 1:
Peak pulse power versus exponential pulse
duration.
Pp(kW)
1.E+02
Tj initial=25°C
Fig. 2:
Relative variation of peak pulse power
versus initial junction temperature.
%
110
100
90
80
1.E+01
70
60
50
1.E+00
40
30
20
tp(ms)
1.E-01
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
10
0
0
25
50
75
Tj(°C)
100
125
150
175
Fig. 3:
Average power dissipation versus ambient
temperature.
P(W)
1.8
1.6
1.4
1.2
1.0
0.8
Printed circuit board
Tamb =Tleads
Fig. 4:
Variation of thermal impedance junction to
ambient versus pulse duration (printed circuit
board epoxy FR4)
Zth(j-a) (°C/W)
1000.0
Free air
100.0
0.6
0.4
0.2
0.0
0
25
50
75
100
125
150
10.0
Tamb(°C)
1.0
1.E-02
1.E-01
1.E+00
tp(s)
1.E+01
1.E+02
1.E+03
3/5
PKC-136
Fig. 5:
Thermal resistance junction to ambient
versus copper surface under each lead.
Rth(j-a)
110
100
90
80
70
60
50
40
1.E-04
1.E-03
1.E-02
Tj=100°C
Fig. 6-1:
Reverse leakage current versus reverse
voltage applied (typical values, for Transil).
IR(µA)
1.E+00
Lleads=10mm
Tj=150°C
1.E-01
Tj=125°C
30
20
10
0
0
1
2
3
4
5
6
7
8
9
10
1.E-05
Tj=25°C
S(cm²)
1.E-06
10
20
30
40
50
60
70
VR(V)
80
90
100 110 120 130 140 150
Fig. 6-2:
Reverse leakage current versus reverse
voltage applied (typical values, for diode).
IR(µA)
1.E+02
Tj=150°C
Fig. 7:
Transient peak forward voltage versus
d
IF
/dt (90% confidence).
V
FP
(V)
50
45
40
IF=3A
Tj=125°C
1.E+01
Tj=125°C
35
30
25
1.E+00
Tj=100°C
1.E-01
Tj=25°C
20
15
10
1.E-02
VR(V)
1.E-03
0
50
100 150 200 250 300 350 400 450 500 550 600 650 700
5
0
0
50
100
150
dIF/dt(A/µs)
200
250
300
350
400
450
500
Fig. 8:
Clamping voltage versus peak pulse
current (maximum values).
Ipp(A)
10.0
tp<500ns
Fig. 9:
Junction capacitance versus reverse
voltage applied on clamping characteristic (typical
values).
C(pF)
100
F=1MHz
Vosc=30mV
RMS
Tj=25°C
Tj=25°C
Tj=125°C
1.0
Vcl(V)
0.1
160
165
170
175
180
185
190
195
200
205
210
215
220
10
1
10
VR(V)
100
1000
4/5
PKC-136
PACKAGE MECHANICAL DATA
DO-15
REF.
C
A
C
DIMENSIONS
Millimeters
Min.
Max.
6.75
3.53
31
0.88
Inches
Min.
0.238
0.116
1.024
0.028
Max.
0.266
0.139
1.220
0.035
A
B
D
B
6.05
2.95
26
0.71
C
D
Ordering type
PKC136
PKC136-RL
Marking
Partnumber
Diode cathode ring
Partnumber
Diode cathode ring
Package
DO-15
DO-15
Weight
0.4g
0.4g
Base qty
1000
6000
Delivery
mode
Ammopack
Tape and reel
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 2001 STMicroelectronics - Printed in Italy - All rights reserved.
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MEMS传感器
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