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SMCJ7.0C

产品描述ESD Suppressors / TVS Diodes 7Vr 1500W 125A 10% BiDirectional
产品类别分立半导体    二极管   
文件大小989KB,共6页
制造商Littelfuse
官网地址http://www.littelfuse.com
标准
下载文档 详细参数 全文预览

SMCJ7.0C概述

ESD Suppressors / TVS Diodes 7Vr 1500W 125A 10% BiDirectional

SMCJ7.0C规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证符合
厂商名称Littelfuse
零件包装代码DO-214AB
包装说明R-PDSO-C2
针数2
Reach Compliance Codenot_compliant
ECCN代码EAR99
其他特性LOW INDUCTANCE, EXCELLENT CLAMPING CAPABILITY, UL RECOGNIZED
最大击穿电压9.01 V
最小击穿电压7.37 V
击穿电压标称值8.19 V
最大钳位电压12 V
配置SINGLE
二极管元件材料SILICON
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码DO-214AB
JESD-30 代码R-PDSO-C2
JESD-609代码e3
湿度敏感等级1
最大非重复峰值反向功率耗散1500 W
元件数量1
端子数量2
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)260
极性BIDIRECTIONAL
认证状态Not Qualified
最大重复峰值反向电压7 V
表面贴装YES
技术AVALANCHE
端子面层Matte Tin (Sn)
端子形式C BEND
端子位置DUAL
处于峰值回流温度下的最长时间40

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Transient Voltage Suppression Diodes
Surface Mount – 1500W > SMCJ series
SMCJ Series
Uni-directional
Bi-directional
Description
RoHS
Pb
e3
The SMCJ series is designed specifically to protect
sensitive electronic equipment from voltage transients
induced by lightning and other transient voltage events.
Features
• 1500W peak pulse power
capability at 10/1000μs
waveform, repetition rate
(duty cycles):0.01%
• Excellent clamping
capability
• Low incremental surge
resistance
• Typical I
R
less than 1μA
when V
BR
min>12V
• For surface mounted
applications to optimize
board space
• Low profile package
• Built-in strain relief
• Typical failure mode is
short from over-specified
voltage or current
• Whisker test is conducted
based on JEDEC
JESD201A per its table 4a
and 4c
• IEC-61000-4-2 ESD
30kV(Air), 30kV (Contact)
• ESD protection of data
lines in accordance with
IEC 61000-4-2
• EFT protection of data
lines in accordance with
IEC 61000-4-4
Applications
TVS devices are ideal for the protection of I/O Interfaces,
V
CC
bus and other vulnerable circuits used in Telecom,
Computer, Industrial and Consumer electronic
applications.
Additional Infomarion
• Fast response time:
typically less than 1.0ps
from 0V to BV min
• Glass passivated chip
junction
• High temperature
to reflow soldering
guaranteed: 260°C/40sec
• V
BR
@ T
J
= V
BR
@25°C
x (1+
α
T x (T
J
- 25))
(
α
T:Temperature
Coefficient, typical value
is 0.1%)
• Plastic package is
flammability rated V-0 per
Underwriters Laboratories
• Meet MSL level1, per
J-STD-020, LF maximun
peak of 260
°
C
• Matte tin lead–free plated
• Halogen free and RoHS
compliant
• Pb-free E3 means 2nd
level interconnect is
Pb-free and the terminal
finish material is tin(Sn)
(IPC/JEDEC J-STD-
609A.01)
Agency Approvals
AGENCY
AGENCY FILE NUMBER
E230531
Maximum Ratings and Thermal Characteristics
(T
A
=25
O
C unless otherwise noted)
Parameter
Peak Pulse Power Dissipation at
T
A
=25ºC by 10/1000µs Waveform
(Fig.2)(Note 1), (Note 2), (Note 5)
Power Dissipation on Infinite Heat
Sink at T
L
=50
O
C
Peak Forward Surge Current, 8.3ms
Single Half Sine Wave (Note 3)
Maximum Instantaneous Forward
Voltage at 100A for Unidirectional
Only (Note 4)
Operating Temperature Range
Storage Temperature Range
Typical Thermal Resistance Junction
to Lead
Typical Thermal Resistance Junction
to Ambient
Symbol
P
PPM
P
D
I
FSM
V
F
T
J
T
STG
R
θJL
R
θJA
Value
1500
6.5
200
3.5/5.0
-65 to 150
-65 to 175
15
75
Unit
W
W
A
V
°C
°C
°C/W
°C/W
Notes:
1. Non-repetitive current pulse , per Fig. 4 and derated above T
J
(initial) =25
O
C per Fig. 3.
2. Mounted on copper pad area of 0.31x0.31” (8.0 x 8.0mm) to each terminal.
3. Measured on 8.3ms single half sine wave or equivalent square wave for unidirectional
device only, duty cycle=4 per minute maximum.
4. V
F
< 3.5V for single die parts and V
F
< 5.0V for stacked-die parts.
5. The P
PPM
of stacked-die parts is 2000W and please contact littelfuse for the detail
stacked-die parts.
Functional Diagram
Bi-directional
Datasheet
Cathode
Uni-directional
Anode
Resources
Samples
© 2015 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 11/20/15
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