SiHB22N60S
www.vishay.com
Vishay Siliconix
S Series Power MOSFET
PRODUCT SUMMARY
V
DS
at T
J
max. (V)
R
DS(on)
max. at 25 °C (Ω)
Q
g
max. (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
98
17
25
Single
D
FEATURES
650
0.190
• Generation one
• High E
AR
capability
• Lower figure-of-merit R
on
x Q
g
• 100 % avalanche tested
Available
• Ultra low R
on
• dV/dt ruggedness
• Ultra low gate charge (Q
g
)
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
D
2
PAK (TO-263)
APPLICATIONS
G
G D
S
S
N-Channel MOSFET
• PFC power supply stages
• Hard switching topologies
• Solar inverters
• UPS
• Motor control
• Lighting
• Server telecom
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
D
2
PAK (TO-263)
SiHB22N60S-GE3
SiHB22N60S-E3
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain
Current
a
D
2
PAK
(TO-263)
E
AS
E
AR
D
2
PAK
(TO-263)
T
J
= 125 °C
P
D
dV/dt
T
J
, T
stg
for 10 s
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
LIMIT
600
± 30
22
13
65
2
690
25
250
37
5.3
-55 to +150
300
W/°C
mJ
W
V/ns
°C
A
UNIT
V
Linear Derating Factor
Single Pulse Avalanche Energy
b
Repetitive Avalanche
Energy
a
Maximum Power Dissipation
Drain-Source Voltage Slope
Reverse Diode dV/dt
d
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak
Temperature)
c
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. V
DD
= 50 V, starting T
J
= 25 °C, L = 28.2 mH, R
g
= 25
Ω,
I
AS
= 7 A.
c. 1.6 mm from case.
d. I
SD
≤
I
D
, dI/dt = 100 A/μs, starting T
J
= 25 °C.
S15-0982-Rev. F, 27-Apr-15
Document Number: 91395
1
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiHB22N60S
www.vishay.com
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
D
2
PAK (TO-263)
D
2
PAK
(TO-263)
SYMBOL
R
thJA
R
thJC
TYP.
-
-
MAX.
62
0.5
UNIT
°C/W
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage (N)
Gate-Source Leakage
V
DS
ΔV
DS
/T
J
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 1 mA
Reference to 25 °C, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 μA
V
GS
= ± 20 V
V
GS
= ± 30 V
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
a
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
(Time Related)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Input Resistance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
S
I
SM
V
SD
t
rr
Q
rr
I
RRM
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
600
-
2.0
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
0.70
-
-
-
-
-
0.160
9.4
2810
1480
33
155
75
17
25
24
68
77
59
0.65
MAX.
-
-
4.0
± 100
±1
1
100
0.190
-
-
-
-
-
110
-
-
50
100
115
90
-
UNIT
V
V/°C
V
nA
μA
μA
Ω
S
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
C
oss eff.
(TR)
a
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
R
g
V
DS
= 600 V, V
GS
= 0 V
V
DS
= 600 V, V
GS
= 0 V, T
J
= 150 °C
V
GS
= 10 V
I
D
= 11 A
V
DS
= 50 V, I
D
= 13 A
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz
V
GS
= 0 V
V
DS
= 0 V to 480 V
pF
V
GS
= 10 V
I
D
= 22 A, V
DS
= 480 V
-
-
-
nC
V
DD
= 380 V, I
D
= 22 A,
R
g
= 9.1
Ω,
V
GS
= 10 V
f = 1 MHz, open drain
-
-
-
-
ns
Ω
-
-
-
-
-
-
-
-
-
462
8.3
30
22
A
88
1.2
690
16
60
V
ns
μC
A
G
S
T
J
= 25 °C, I
S
= 22 A, V
GS
= 0 V
T
J
= 25 °C, I
F
= I
S
,
dI/dt = 100 A/μs, V
R
= 25 V
Note
a. C
oss eff.
(TR) is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 % to 80 % V
DS
.
S15-0982-Rev. F, 27-Apr-15
Document Number: 91395
2
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiHB22N60S
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
50
V
GS
Top 15 V
14 V
13 V
12 V
11 V
10 V
9V
8V
7V
6V
5V
Bottom 4 V
T
J
= 25
°C
8
12
16
20
24
Vishay Siliconix
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
3.5
3
2.5
2
1.5
1
0.5
0
- 60 - 40 - 20 0
I
D
= 22 A
V
GS
= 10 V
I
D
, Drain Current (A)
40
30
20
10
4V
0
0
4
20 40 60 80 100 120 140 160 180
V
DS
, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics, T
J
= 25 °C
T
J,
Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
30
V
GS
Top 15 V
14 V
13 V
12 V
11 V
10 V
9V
8V
7V
6V
5V
Bottom 4 V
T
J
= 150
°C
100 000
I
D
, Drain Current (A)
24
18
Capacitance (pF)
10 000
C
oss
V
GS
= 0 V, f = 1 MHz
C
iss
= C
gs
+ C
gd
•
C
ds
shorted
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
iss
1000
12
6
4 .0 V
100
C
rss
0
0
4
10
8
12
16
20
24
1
10
100
V
DS
, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, T
J
= 150 °C
V
DS,
Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
60
V
GS
, Gate-to-Source Voltage (V)
T
J
= 25 °C
12.0
I
D
= 22 A
10.0
8.0
6.0
4.0
2.0
0.0
0
10
20
30
40
50
60 70
80
90 100
V
DS
= 480 V
V
DS
= 300 V
V
DS
= 120 V
I
D
, Drain Current (A)
50
40
30
20
T
J
= 150 °C
10
0
2
4
6
8
10
V
GS,
Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
S15-0982-Rev. F, 27-Apr-15
Q
G
, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Document Number: 91395
3
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiHB22N60S
www.vishay.com
Vishay Siliconix
25
1000
I
SD
, Reverse Drain Current (A)
100
10
1
0.1
0.01
0.001
0.0001
0.2
0.4
0.6
0.8
1
V
GS
= 0 V
1.2
1.4
T
J
= 150 °C
T
J
= 25 °C
20
I
D
, Drain Current (A)
15
10
5
0
25
50
75
100
125
150
V
SD
, Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
T
C
, Case Temperature (°C)
Fig. 9 - Maximum Drain Current vs. Case Temperature
1000
Operation in this area limited
by R
DS(on)
100
725
V
DS,
Drain-to-Source Breakdown
Voltage (V)
700
675
650
625
600
575
550
- 60 - 40 - 20 0
I
D
, Drain Current (A)
10
100 µs
1 ms
T
C
= 25
°C
T
J
= 150
°C
Single Pulse
1
10
100
10 ms
1
0.1
1000
10 000
20 40 60 80 100 120 140 160 180
V
DS
, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
T
J,
Junction Temperature (°C)
Fig. 10 - Drain-to-Source Breakdown Voltage
1
normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
10
-3
10
-2
0.1
1
0.01
10
-4
Square Wave Pulse Duration (s)
Fig. 11 - Normalized Thermal Transient Impedance, Junction-to-Case
S15-0982-Rev. F, 27-Apr-15
Document Number: 91395
4
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiHB22N60S
www.vishay.com
Vishay Siliconix
R
D
V
GS
Q
G
V
DS
V
GS
R
g
D.U.T.
+
- V
DD
Q
GS
Q
GD
10 V
Pulse width
≤
1 µs
Duty factor
≤
0.1 %
V
G
Fig. 12 - Switching Time Test Circuit
Charge
Fig. 16 - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
50 kΩ
12 V
0.2 µF
0.3 µF
V
DS
90 %
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
V
GS
+
D.U.T.
-
V
DS
Fig. 13 - Switching Time Waveforms
L
Vary t
p
to obtain
required I
AS
R
g
V
DS
3 mA
I
G
I
D
Current sampling resistors
Fig. 17 - Gate Charge Test Circuit
D.U.T
I
AS
+
-
V
DD
10 V
t
p
0.01
W
Fig. 14 - Unclamped Inductive Test Circuit
V
DS
t
p
V
DD
V
DS
I
AS
Fig. 15 - Unclamped Inductive Waveforms
S15-0982-Rev. F, 27-Apr-15
Document Number: 91395
5
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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