VS-301CNQ...PbF Series
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 300 A
FEATURES
Lug
terminal
anode 1
Lug
terminal
anode 2
• 175 °C T
J
operation
• Center tap module
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
TO-244
Base common
cathode
• UL approved file E222165
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
I
F(AV)
V
R
Package
Circuit configuration
300 A
40 V, 45 V
TO-244
Two diodes common cathode
DESCRIPTION / APPLICATIONS
The VS-301CNQ... center tap Schottky rectifier module
series has been optimized for low reverse leakage at high
temperature. The proprietary barrier technology allows for
reliable operation up to 175 °C junction temperature. Typical
applications are in high current switching power supplies,
plating power supplies, UPS systems, converters,
freewheeling diodes, welding, and reverse battery
protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
Rectangular waveform
Range
t
p
= 5 μs sine
150 A
pk
, T
J
= 125 °C (per leg)
Range
CHARACTERISTICS
VALUES
300
40/45
16 000
0.59
-55 to +175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-301CNQ040PbF
40
VS-301CNQ045PbF
45
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average
forward current
See fig. 5
per leg
I
F(AV)
per device
5 μs sine or 3 μs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
T
J
= 25 °C, I
AS
= 21 A, L = 1 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Following any rated load
condition and with rated
V
RRM
applied
50 % duty cycle at T
C
= 132 °C, rectangular waveform
300
A
Maximum peak one cycle non-repetitive
surge current per leg
See fig. 7
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
16 000
3200
202
30
mJ
A
SYMBOL
TEST CONDITIONS
VALUES
150
UNITS
Revision: 09-May-17
Document Number: 94176
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-301CNQ...PbF Series
www.vishay.com
Vishay Semiconductors
SYMBOL
150 A
TEST CONDITIONS
T
J
= 25 °C
T
J
= 100 °C
V
R
= Rated V
R
VALUES
0.69
0.90
0.59
0.76
10
90
5200
7.0
10 000
mA
pF
nH
V/μs
V
UNITS
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop per leg
See fig. 1
V
FM (1)
300 A
150 A
300 A
Maximum reverse leakage current per leg
See fig. 2
Maximum junction capacitance per leg
Typical series inductance per leg
Maximum voltage rate of change
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
I
RM (1)
C
T
L
S
dV/dt
T
J
= 25 °C
T
J
= 125 °C
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C
From top of terminal hole to mounting plane
Rated V
R
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage temperature
range
Thermal resistance, junction to case per leg
Thermal resistance, junction to case per module
Thermal resistance, case to heatsink
Weight
Mounting torque
Mounting torque center hole
Terminal torque
Vertical pull
2" lever pull
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
MIN.
-55
-
-
-
-
-
35.4 (4)
30 (3.4)
30 (3.4)
-
-
TYP.
-
-
-
0.10
68
2.4
-
-
-
-
-
MAX.
175
0.28
0.14
-
-
-
53.1 (6)
40 (4.6)
44.2 (5)
80
35
lbf
⋅
in
g
oz.
lbf
⋅
in
(N
⋅
m)
°C/W
UNITS
°C
1000
1000
T
J
= 175 °C
I
F
- Instantaneous Forward
Current (A)
I
R
- Reverse Current (mA)
100
T
J
= 150 °C
10
100
T
J
= 175 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
1
0.1
0.01
0.001
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
0
5
10
15
20
25
30
35
40
45
10
1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg)
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
Revision: 09-May-17
Document Number: 94176
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-301CNQ...PbF Series
www.vishay.com
Vishay Semiconductors
10 000
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
1000
5
10
15
20
25
30
35
40
45
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Z
thJC
- Thermal Impedance (°C/W)
1
0.1
0.01
Single pulse
(thermal resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Leg)
Allowable Case Temperature (°C)
180
140
160
150
140
130
120
110
100
DC
Average Power Loss (W)
170
120
100
80
60
40
20
0
D = 0.08
D = 0.17
D = 0.25
D = 0.33
D = 0.50
RMS limit
DC
Square wave (D = 0.50)
80 % rated V
R
applied
See note (1)
0
50
100
150
200
250
0
25
50
75
100 125 150 175 200 225
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
Revision: 09-May-17
Document Number: 94176
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-301CNQ...PbF Series
www.vishay.com
I
FSM
- Non-Repetitive Surge Current (A)
100 000
Vishay Semiconductors
At any rated load condition
and with rated V
RRM
applied
following surge
10 000
1000
10
100
1000
10 000
t
p
-
Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
L
High-speed
switch
Freewheel
diode
40HFL40S02
+ V
d
= 25 V
D.U.T.
IRFP460
R
g
= 25
Ω
Current
monitor
Fig. 8 - Unclamped Inductive Test Circuit
(1)
Note
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
ORDERING INFORMATION TABLE
Device code
VS-
1
30
2
-
-
-
-
-
-
-
-
1
3
C
4
N
5
Q
6
045 PbF
7
8
1
2
3
4
5
6
7
8
Vishay Semiconductors product
Average current rating (x 10)
Product silicon identification
C = circuit configuration
N = not isolated
Q = Schottky rectifier diode
Voltage ratings
Lead (Pb)-free
040 = 40 V
045 = 45 V
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95021
Revision: 09-May-17
Document Number: 94176
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
TO-244
DIMENSIONS
in millimeters (inches)
35 (1.37) REF.
13 (0.51)
7 (0.27)
6 (0.23)
40 (1.57)
80 (3.15)
17.5 (0.69)
16.5 (0.65)
Ø 5.2 (Ø 0.20)
3
12.6 (0.5)
1
2
3
21 (0.82)
20 (0.78)
Ø 7.2 (Ø 0.28)
(2 places)
¼" - 20 UNC
9.6 (0.37) MIN.
93 (3.66) MAX.
Revision: 24-Apr-15
Document Number: 95021
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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