HCF4052B
DIFFERENT 4-CHANNEL
ANALOG MULTIPLEXER/DEMULTIPLEXER
s
s
s
s
s
s
s
s
s
s
s
s
LOW "ON" RESISTANCE : 125Ω (Typ.)
OVER 15V p.p SIGNAL-INPUT RANGE FOR
V
DD
- V
EE
= 15V
HIGH "OFF" RESISTANCE : CHANNEL
LEAKAGE
±
100pA (Typ.) at V
DD
- V
EE
= 18V
BINARY ADDRESS DECODING ON CHIP
HIGH DEGREE OF LINEARITY : < 0.5%
DISTORTION TYP. at f
IS
= 1KHz, V
IS
= 5 V
pp
,
V
DD
- V
SS
> 10V, RL = 10KΩ
VERY LOW QUIESCENT POWER
DISSIPATION UNDER ALL DIGITAL
CONTROL INPUT AND SUPPLY
CONDITIONS : 0.2
µ
W (Typ.)
at V
DD
- V
SS
= V
DD
- V
EE
=10V
MATCHED SWITCH CHARACTERISTICS :
R
ON
= 5Ω (Typ.) FOR V
DD
- V
EE
= 15V
WIDE RANGE OF DIGITAL AND ANALOG
SIGNAL LEVELS : DIGITAL 3 to 20,
ANALOG TO 20V p.p.
QUIESCENT CURRENT SPECIF. UP TO 20V
5V, 10V AND 15V PARAMETRIC RATINGS
INPUT LEAKAGE CURRENT
I
I
= 100nA (MAX) AT V
DD
= 18V T
A
= 25°C
100% TESTED FOR QUIESCENT CURRENT
MEETS ALL REQUIREMENTS OF JEDEC
JESD13B " STANDARD SPECIFICATIONS
FOR DESCRIPTION OF B SERIES CMOS
DEVICES"
DIP
SOP
ORDER CODES
PACKAGE
DIP
SOP
TUBE
HCF4052BEY
HCF4052BM1
T&R
HCF4052M013TR
DESCRIPTION
The HCF4052B is a monolithic integrated circuit
fabricated in Metal Oxide Semiconductor
PIN CONNECTION
technology available in DIP and SOP packages.
The HCF4052B analog multiplexer/demultiplexer
is a digitally controlled analog switch having low
ON impedance and very low OFF leakage current.
This multiplexer circuit dissipate extremely low
quiescent power over the full V
DD
- V
SS
and V
DD
-
V
EE
supply voltage range, independent of the
logic state of the control signals.
When a logic "1" is present at the inhibit input
terminal all channel are off. This device is a
differential 4-channel multiplexer having two
binary control inputs, A and B and an inhibit input.
The two binary input signals selects 1 of 4 pairs of
channels to be turned on and connect the analog
inputs to the outputs.
October 2002
1/11
HCF4052B
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DD
V
I
I
I
P
D
T
op
T
stg
Supply Voltage
DC Input Voltage
DC Input Current
Power Dissipation per Package
Power Dissipation per Output Transistor
Operating Temperature
Storage Temperature
Parameter
Value
-0.5 to +22
-0.5 to V
DD
+ 0.5
±
10
500 (*)
100
-55 to +125
-65 to +150
Unit
V
V
mA
mW
mW
°C
°C
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
All voltage values are referred to V
SS
pin voltage.
(*) 500mW at 65
°
C; derate to 300mW by 10mW/
°
C from 65
°
C to 85
°
C
RECOMMENDED OPERATING CONDITIONS
Symbol
V
DD
V
I
T
op
Supply Voltage
Input Voltage
Operating Temperature
Parameter
Value
3 to 20
0 to V
DD
-55 to 125
Unit
V
V
°C
3/11
HCF4052B
DYNAMIC ELECTRICAL CHARACTERISTICS
(T
amb
= 25°C, C
L
= 50pF, all input square wave rise and
fall time = 20 ns )
Test Condition
Parameter
Propagation Delay
Time (signal input to
output)
Frequency Response
Channel "ON" (sine
wave input) at
20 log V
O
/V
I
= - 3dB
Feed through (all
channels OFF) at
20 log V
O
/V
I
= - 40dB
V
EE
(V)
R
L
(KΩ)
200
f
I
(KHz)
V
I
(V)
V
DD
V
SS
(V)
V
DD
(V)
5
10
15
V
O
at Common
OUT/IN
V
O
at any
channel
V
O
at Common
OUT/IN
V
O
at any
channel
Between
Sections
(measured on
common)
Between
Sections
(measured on
any channel)
Value
Min. Typ. Max.
30
15
11
25
MHz
60
10
MHz
8
60
30
20
Unit
ns
= V
SS
1
5(*)
10
= V
SS
1
5(*)
10
6
MHz
10
0.3
0.2
0.12
360
160
120
225
360
160
120
200
200
90
70
130
720
320
240
450
720
320
240
400
450
210
160
300
Frequency Signal
Crosstalk at
20 log V
O
/V
I
= -40dB
= V
SS
1
5(*)
10
Sine Wave Distortion
= V
SS
f
IS
= 1KHz Sine Wave
10
1
2(*)
3(*)
5(*)
0
0
0
0
0
0
0
0
5
10
15
5
10
15
5
5
10
15
5
5
10
15
5
10
V
C
= V
DD
-V
SS
(square wave)
%
CONTROL (Address or Inhibit)
Propagation Delay:
0
Address to Signal
0
OUT (Channels ON
0
or OFF)
-5
Propagation Delay:
0
Inhibit to Signal OUT
0
1
(Channel turning ON)
0
-10
Propagation Delay:
0
Inhibit to Signal OUT
0
10
(Channel turning
0
OFF)
-10
Address or Inhibit to
Signal Crosstalk
0
10
(1)
ns
ns
ns
0
65
mV
peak
(1) Both ends of channel.
* Peak to Peak voltage symmetrical about (V
DD
- V
EE
) /2
5/11
嵌入式系统
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