IRF7425PbF
V
DS
R
DS(on) max
(@V
GS
= -4.5V)
-20
8.2
V
S
1
2
3
4
HEXFET
®
Power MOSFET
8
7
A
D
D
D
D
R
DS(on) max
(@V
GS
= -2.5V)
mΩ
13
87
-15
nC
A
S
S
G
6
5
Q
g (typical)
I
D
(@T
A
= 25°C)
Top View
SO-8
Features
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1,Consumer qualification
⇒
Benefits
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base Part Number
IRF7425PbF
Package Type
SO-8
Standard Pack
Form
Quantity
Tube/Bulk
95
Tape and Reel
4000
Orderable Part Number
IRF7425PbF
IRF7425TRPbF
Absolute Maximum Ratings
Parameter
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
V
GS
T
J,
T
STG
Drain- Source Voltage
Continuous Drain Current, V
GS
@ -4.5V
Continuous Drain Current, V
GS
@ -4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-20
-15
-12
-60
2.5
1.6
20
± 12
-55 to + 150
Units
V
A
W
mW/°C
V
°C
Thermal Resistance
Parameter
R
θJA
Maximum Junction-to-Ambient
Max.
50
Units
°C/W
1
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2013 International Rectifier
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October 29, 2013
IRF7425PbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
ΔV
(BR)DSS
/ΔT
J
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Min.
-20
–––
–––
–––
-0.45
44
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.010
–––
–––
–––
–––
–––
–––
–––
–––
87
18
21
13
20
230
160
7980
1480
980
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= -250μA
––– V/°C Reference to 25°C, I
D
= -1mA
8.2
V
GS
= -4.5V, I
D
= -15A
mΩ
13
V
GS
= -2.5V, I
D
= -13A
-1.2
V
V
DS
= V
GS
, I
D
= -250μA
–––
S
V
DS
= -10V, I
D
= -15A
-1.0
V
DS
= -16V, V
GS
= 0V
µA
-25
V
DS
= -16V, V
GS
= 0V, T
J
= 70°C
-100
V
GS
= -12V
nA
100
V
GS
= 12V
130
I
D
= -15A
27
nC
V
DS
= -10V
32
V
GS
= -4.5V
–––
V
DD
= -10V
–––
I
D
= -1.0A
ns
–––
R
G
= 6.0Ω
–––
V
GS
= -4.5V
–––
V
GS
= 0V
–––
pF
V
DS
= -15V
–––
ƒ = 1.0kHz
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
120
160
-2.5
-60
-1.2
180
240
V
ns
nC
A
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= -2.5A, V
GS
= 0V
T
J
= 25°C, I
F
= -2.5A
di/dt = -100A/μs
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Surface mounted on 1 in square Cu board, t
≤
10sec.
Pulse width
≤
400μs; duty cycle
≤
2%.
2
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October 29, 201
3
IRF7425PbF
1000
-I
D
, Drain-to-Source Current (A)
100
10
-I
D
, Drain-to-Source Current (A)
VGS
TOP
-7.0V
-5.0V
-4.5V
-2.5V
-1.8V
-1.5V
-1.2V
BOTTOM -1.0V
1000
100
VGS
-7.0V
-5.0V
-4.5V
-2.5V
-1.8V
-1.5V
-1.2V
BOTTOM -1.0V
TOP
10
1
1
-1.0V
0.1
-1.0V
20μs PULSE WIDTH
T
J
= 25
°
C
1
10
100
0.01
0.1
0.1
0.1
20μs PULSE WIDTH
T
J
= 150
°
C
1
10
100
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.0
T
J
= 150
°
C
10
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= -15A
-I
D
, Drain-to-Source Current (A)
1.5
1.0
1
T
J
= 25
°
C
0.5
0.1
1.0
V DS = -15V
20μs PULSE WIDTH
1.2
1.4
1.6
1.8
2.0
2.2
0.0
-60 -40 -20
V
GS
= -4.5V
0
20
40
60
80 100 120 140 160
-V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
3
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©
2013 International Rectifier
Fig 4.
Normalized On-Resistance
Vs. Temperature
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October 29, 201
3
IRF7425PbF
12000
10000
-V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
8
I
D
=
-15A
V
DS
=-16V
V
DS
=-10V
C, Capacitance (pF)
8000
Ciss
6
6000
4
4000
2
2000
Coss
Crss
1
10
100
0
0
0
40
80
120
160
-V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
-I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10
T
J
= 150
°
C
-I
D
, Drain Current (A)
I
100
100us
1
10
1ms
T
J
= 25
°
C
0.1
0.2
V
GS
= 0 V
0.4
0.6
0.8
1.0
-V
SD
,Source-to-Drain Voltage (V)
1
0.1
T
A
= 25 °C
T
J
= 150 ° C
Single Pulse
1
10
10ms
100
-V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
4
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2013 International Rectifier
Fig 8.
Maximum Safe Operating Area
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October 29, 201
3
IRF7425PbF
15
V
DS
12
R
D
V
GS
R
G
D.U.T.
+
-I
D
, Drain Current (A)
9
V
GS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
6
Fig 10a.
Switching Time Test Circuit
3
t
d(on)
t
r
t
d(off)
t
f
V
GS
0
25
50
75
100
125
150
10%
T
C
, Case Temperature ( °C)
Fig 9.
Maximum Drain Current Vs.
Case Temperature
90%
V
DS
Fig 10b.
Switching Time Waveforms
100
D = 0.50
10
0.20
0.10
0.05
1
0.02
0.01
P
DM
SINGLE PULSE
(THERMAL RESPONSE)
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
0.0001
0.001
0.01
0.1
1
10
100
Thermal Response (Z
thJA
)
0.1
0.01
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
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2013 International Rectifier
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October 29, 201
3
-
V
DD
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