1N5913B Series
3 W DO−41 Surmetict 30
Zener Voltage Regulators
This is a complete series of 3 W Zener diodes with limits and
excellent operating characteristics that reflect the superior capabilities
of silicon−oxide passivated junctions. All this in an axial−lead,
transfer−molded plastic package that offers protection in all common
environmental conditions.
Features
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Cathode
Anode
•
•
•
•
•
•
Zener Voltage Range − 3.3 V to 200 V
ESD Rating of Class 3 (>16 KV) per Human Body Model
Surge Rating of 98 W @ 1 ms
Maximum Limits Guaranteed on up to Six Electrical Parameters
Package No Larger than the Conventional 1 W Package
Pb−Free Packages are Available
AXIAL LEAD
CASE 59
PLASTIC
STYLE 1
Mechanical Characteristics
CASE:
Void free, transfer−molded, thermosetting plastic
FINISH:
All external surfaces are corrosion resistant and leads are
MARKING DIAGRAM
A
1N
59xxB
YYWWG
G
A
= Assembly Location
1N59xxB = Device Number
YY
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
readily solderable
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:
260°C, 1/16″ from the case for 10 seconds
POLARITY:
Cathode indicated by polarity band
MOUNTING POSITION:
Any
MAXIMUM RATINGS
Rating
Max. Steady State Power Dissipation
@ T
L
= 75°C, Lead Length = 3/8″
Derate above 75°C
Steady State Power Dissipation
@ T
A
= 50°C
Derate above 50°C
Operating and Storage
Temperature Range
Symbol
P
D
Value
3
24
P
D
1
6.67
T
J
, T
stg
−65 to
+200
Unit
W
mW/°C
W
mW/°C
°C
ORDERING INFORMATION
Device
1N59xxB, G
1N59xxBRL, G
Package
Axial Lead
(Pb−Free)
Axial Lead
(Pb−Free)
Shipping
†
2000 Units/Box
6000/Tape & Reel
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2006
1
April, 2006 − Rev. 5
Publication Order Number:
1N5913B/D
1N5913B Series
ELECTRICAL CHARACTERISTICS
(T
L
= 30°C unless otherwise noted,
V
F
= 1.5 V Max @ I
F
= 200 mAdc for all types)
Symbol
V
Z
I
ZT
Z
ZT
I
ZK
Z
ZK
I
R
V
R
I
F
V
F
I
ZM
Parameter
Reverse Zener Voltage @ I
ZT
Reverse Current
Maximum Zener Impedance @ I
ZT
Reverse Current
Maximum Zener Impedance @ I
ZK
Reverse Leakage Current @ V
R
Breakdown Voltage
Forward Current
Forward Voltage @ I
F
Maximum DC Zener Current
V
Z
V
R
I
R
V
F
I
ZT
V
I
F
I
Zener Voltage Regulator
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2
1N5913B Series
ELECTRICAL CHARACTERISTICS
(T
L
= 30°C unless otherwise noted, V
F
= 1.5 V Max @ I
F
= 200 mAdc for all types)
Zener Voltage
(Note 2)
Device
†
(Note 1)
1N5913B, G
1N5917B, G
1N5919B, G
1N5920B, G
1N5921B, G
1N5923B, G
1N5924B, G
1N5925B, G
1N5926B, G
1N5927B, G
1N5929B, G
1N5930B, G
1N5931B, G
1N5932B, G
1N5933B, G
1N5934B, G
1N5935B, G
1N5936B, G
1N5937B, G
1N5938B, G
1N5940B, G
1N5941B, G
1N5942B, G
1N5943B, G
1N5944B, G
1N5946B, G
1N5947B, G
1N5948B, G
1N5950B, G
1N5951B, G
1N5952B, G
1N5953B, G
1N5954B, G
1N5955B, G
1N5956B, G
Device
Marking
1N5913B
1N5917B
1N5919B
1N5920B
1N5921B
1N5923B
1N5924B
1N5925B
1N5926B
1N5927B
1N5929B
1N5930B
1N5931B
1N5932B
1N5933B
1N5934B
1N5935B
1N5936B
1N5937B
1N5938B
1N5940B
1N5941B
1N5942B
1N5943B
1N5944B
1N5946B
1N5947B
1N5948B
1N5950B
1N5951B
1N5952B
1N5953B
1N5954B
1N5955B
1N5956B
V
Z
(Volts)
Min
3.14
4.47
5.32
5.89
6.46
7.79
8.65
9.50
10.45
11.40
14.25
15.20
17.10
19.00
20.90
22.80
25.65
28.50
31.35
34.20
40.85
44.65
48.45
53.20
58.90
71.25
77.90
86.45
104.5
114
123.5
142.5
152
171
190
Nom
3.3
4.7
5.6
6.2
6.8
8.2
9.1
10
11
12
15
16
18
20
22
24
27
30
33
36
43
47
51
56
62
75
82
91
110
120
130
150
160
180
200
Max
3.47
4.94
5.88
6.51
7.14
8.61
9.56
10.50
11.55
12.60
15.75
16.80
18.90
21.00
23.10
25.20
28.35
31.50
34.65
37.80
45.15
49.35
53.55
58.80
65.10
78.75
86.10
95.55
115.5
126
136.5
157.5
168
189
210
@ I
ZT
mA
113.6
79.8
66.9
60.5
55.1
45.7
41.2
37.5
34.1
31.2
25.0
23.4
20.8
18.7
17.0
15.6
13.9
12.5
11.4
10.4
8.7
8.0
7.3
6.7
6.0
5.0
4.6
4.1
3.4
3.1
2.9
2.5
2.3
2.1
1.9
Zener Impedance
(Note 3)
Z
ZT
@ I
ZT
W
10
5
2
2
2.5
3.5
4
4.5
5.5
6.5
9
10
12
14
17.5
19
23
28
33
38
53
67
70
86
100
140
160
200
300
380
450
600
700
900
1200
Z
ZK
@ I
ZK
W
500
500
250
200
200
400
500
500
550
550
600
600
650
650
650
700
700
750
800
850
950
1000
1100
1300
1500
2000
2500
3000
4000
4500
5000
6000
6500
7000
8000
mA
1
1
1
1
1
0.5
0.5
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
Leakage Current
I
R
@ V
R
mA
Max
100
5
5
5
5
5
5
5
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Volts
1
1.5
3
4
5.2
6.5
7
8
8.4
9.1
11.4
12.2
13.7
15.2
16.7
18.2
20.6
22.8
25.1
27.4
32.7
35.8
38.8
42.6
47.1
56
62.2
69.2
83.6
91.2
98.8
114
121.6
136.8
152
I
ZM
mA
454
319
267
241
220
182
164
150
136
125
100
93
83
75
68
62
55
50
45
41
34
31
29
26
24
20
18
16
13
12
11
10
9
8
7
Devices listed in
bold, italic
are ON Semiconductor
Preferred
devices.
Preferred
devices are recommended choices for future use and best overall value.
†The “G’’ suffix indicates Pb−Free package available.
1.
TOLERANCE AND TYPE NUMBER DESIGNATION
Tolerance designation − device tolerance of
±5%
are indicated by a “B” suffix.
2.
ZENER VOLTAGE (V
Z
) MEASUREMENT
ON Semiconductor guarantees the zener voltage when measured at 90 seconds while maintaining the lead temperature (T
L
) at 30°C
±1°C,
3/8″ from the diode body.
3.
ZENER IMPEDANCE (Z
Z
) DERIVATION
The zener impedance is derived from 60 seconds AC voltage, which results when an AC current having an rms value equal to 10% of the
DC zener current (I
ZT
or I
ZK
) is superimposed on I
ZT
or I
ZK
.
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3
1N5913B Series
P
D
, STEADY STATE DISSIPATION (WATTS)
5
L = 1/8″
4
3
L = 3/8″
L = LEAD LENGTH
TO HEAT SINK
2
1
L = 1″
0
0
20
40
60
80 100 120 140 160
T
L
, LEAD TEMPERATURE (°C)
180
200
Figure 1. Power Temperature Derating Curve
θ
JL(t, D) TRANSIENT THERMAL RESISTANCE
JUNCTION-TO-LEAD (
°
C/W)
30
20
10
7
5
3
2
D =0.5
0.2
0.1
0.05
0.02
0.01
D=0
0.0005
0.001
0.002
0.005
NOTE: BELOW 0.1 SECOND, THERMAL
RESPONSE CURVE IS APPLICABLE
TO ANY LEAD LENGTH (L).
0.01
0.02
0.05
t, TIME (SECONDS)
0.1
0.2
P
PK
t
2
DUTY CYCLE, D =t
1
/t
2
t
1
1
0.7
0.5
SINGLE PULSE
DT
JL
=
q
JL
(t)P
PK
REPETITIVE PULSES
DT
JL
=
q
JL
(t,D)P
PK
0.5
1
2
5
10
0.3
0.0001 0.0002
Figure 2. Typical Thermal Response L, Lead Length = 3/8 Inch
IR , REVERSE LEAKAGE (μ Adc) @ VR
AS SPECIFIED IN ELEC. CHAR. TABLE
1K
RECTANGULAR
NONREPETITIVE
WAVEFORM
T
J
= 25°C PRIOR
TO INITIAL PULSE
3
2
1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
T
A
= 125°C
PPK , PEAK SURGE POWER (WATTS)
500
300
200
100
50
30
20
10
0.1
0.2 0.3 0.5
T
A
= 125°C
0.002
0.001
0.0005
0.0003
1
2 3
5
10
PW, PULSE WIDTH (ms)
20 30 50
100
1
2
5
10
20
50 100
NOMINAL V
Z
(VOLTS)
200
400
1000
Figure 3. Maximum Surge Power
Figure 4. Typical Reverse Leakage
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4
1N5913B Series
APPLICATION NOTE
Since the actual voltage available from a given zener
diode is temperature dependent, it is necessary to determine
junction temperature under any set of operating conditions
in order to calculate its value. The following procedure is
recommended:
Lead Temperature, T
L
, should be determined from:
T
L
=
q
LA
P
D
+ T
A
DT
JL
is the increase in junction temperature above the lead
temperature and may be found from Figure 2 for a train of
power pulses (L = 3/8 inch) or from Figure 10 for dc power.
DT
JL
=
q
JL
P
D
q
LA
is the lead-to-ambient thermal resistance (°C/W) and
P
D
is the power dissipation. The value for
q
LA
will vary and
depends on the device mounting method.
q
LA
is generally
30−40°C/W for the various clips and tie points in common
use and for printed circuit board wiring.
The temperature of the lead can also be measured using a
thermocouple placed on the lead as close as possible to the
tie point. The thermal mass connected to the tie point is
normally large enough so that it will not significantly
respond to heat surges generated in the diode as a result of
pulsed operation once steady-state conditions are achieved.
Using the measured value of T
L
, the junction temperature
may be determined by:
T
J
= T
L
+
DT
JL
For worst-case design, using expected limits of I
Z
, limits
of P
D
and the extremes of T
J
(DT
J
) may be estimated.
Changes in voltage, V
Z
, can then be found from:
DV
=
q
VZ
DT
J
q
VZ
, the zener voltage temperature coefficient, is found
from Figures 5 and 6.
Under high power-pulse operation, the zener voltage will
vary with time and may also be affected significantly by the
zener resistance. For best regulation, keep current
excursions as low as possible.
Data of Figure 2 should not be used to compute surge
capability. Surge limitations are given in Figure 3. They are
lower than would be expected by considering only junction
temperature, as current crowding effects cause temperatures
to be extremely high in small spots resulting in device
degradation should the limits of Figure 3 be exceeded.
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5
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