Freescale Semiconductor
Technical Data
Document Number: MRF7S16150H
Rev. 1, 12/2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for WiMAX base station applications with frequencies up to
1700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class
AB and Class C amplifier applications.
•
Typical WiMAX Performance: V
DD
= 28 Volts, I
DQ
= 1500 mA,
P
out
= 32 Watts Avg., f = 1600 and 1660 MHz, 802.16d, 64 QAM
3
/
4
,
4 bursts, 7 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01%
Probability on CCDF.
Power Gain — 19.7 dB
Drain Efficiency — 25.4%
Device Output Signal PAR — 8.2 dB @ 0.01% Probability on CCDF
ACPR @ 5.25 MHz Offset — - 47.5 dBc in 0.5 MHz Channel Bandwidth
•
Capable of Handling 10:1 VSWR, @ 32 Vdc, 1630 MHz, 150 Watts CW
Output Power
•
P
out
@ 1 dB Compression Point
w
150 Watts CW
Features
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Internally Matched for Ease of Use
•
Integrated ESD Protection
•
Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF7S16150HR3
MRF7S16150HSR3
1600- 1660 MHz, 32 W AVG., 28 V
WiMAX
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF7S16150HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF7S16150HSR3
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
Value
- 0.5, +65
- 6.0, +10
32, +0
- 65 to +150
150
225
Unit
Vdc
Vdc
Vdc
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 149 W CW
Case Temperature 75°C, 32 W CW
Symbol
R
θJC
Value
(2,3)
0.34
0.37
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
©
Freescale Semiconductor, Inc., 2007 - 2008. All rights reserved.
MRF7S16150HR3 MRF7S16150HSR3
1
RF Device Data
Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Class
IC (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate- Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 348
μAdc)
Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
D
= 1500 mAdc, Measured in Functional Test)
Drain- Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 3.48 Adc)
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Input Capacitance
(V
DS
= 28 Vdc, V
GS
= 0 Vdc
±
30 mV(rms)ac @ 1 MHz)
C
rss
C
oss
C
iss
—
—
—
1.09
585
363
—
—
—
pF
pF
pF
V
GS(th)
V
GS(Q)
V
DS(on)
1.2
2
0.1
2
2.7
0.2
2.7
3.5
0.3
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1500 mA, P
out
= 32 W Avg., f = 1600 MHz and f =
1660 MHz, WiMAX Signal, 802.16d, 7 MHz Channel Bandwidth, 64 QAM
3
/
4
, 4 bursts, PAR = 9.5 dB @ 0.01% Probability on CCDF. ACPR
measured in 0.5 MHz Channel Bandwidth @
±5.25
MHz Offset.
Power Gain
Drain Efficiency
Output Peak - to - Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
1. Part internally matched both on input and output.
(continued)
G
ps
η
D
PAR
ACPR
IRL
18.5
24
7.7
- 58
—
19.7
25.4
8.2
- 47.5
- 12.1
21.5
—
—
- 45
-7
dB
%
dB
dBc
dB
MRF7S16150HR3 MRF7S16150HSR3
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances OFDM Signal
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1500 mA, P
out
= 32 W Avg.,
f = 1600 MHz and f = 1660 MHz, WiMAX Signal, OFDM Single - Carrier, 7 MHz Channel Bandwidth, 64 QAM
3
/
4
, 4 Bursts, PAR = 9.5 dB @
0.01% Probability on CCDF.
Mask System Type G @ P
out
= 32 W Avg.
Mask
Point B at 3.5 MHz Offset
Point C at 5 MHz Offset
Point D at 7.4 MHz Offset
Point E at 14 MHz Offset
Point F at 17.5 MHz Offset
RCE
EVM
—
—
—
—
—
—
—
- 27
- 36
- 41
- 59
- 62
- 29.6
3.3
—
—
—
—
—
—
—
dB
% rms
dBc
Relative Constellation Error @ P
out
= 32 W Avg.
(1)
Error Vector Magnitude
(1)
(Typical EVM Performance @ P
out
= 32 W Avg. with OFDM 802.16d
Signal Call)
Typical Performances
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1500 mA, 1600 - 1660 MHz Bandwidth
Video Bandwidth @ 180 W PEP P
out
where IM3 = - 30 dBc
(Tone Spacing from 100 kHz to VBW)
ΔIMD3
= IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both
sidebands)
Gain Flatness in 60 MHz Bandwidth @ P
out
= 32 W Avg.
Average Deviation from Linear Phase in 60 MHz Bandwidth
@ P
out
= 150 W CW
Average Group Delay @ P
out
= 150 W CW, f = 1630 MHz
Part - to - Part Insertion Phase Variation @ P
out
= 150 W CW,
f = 1630 MHz, Six Sigma Window
Gain Variation over Temperature
( - 30°C to +85°C)
Output Power Variation over Temperature
( - 30°C to +85°C)
1. RCE = 20Log(EVM/100)
VBW
—
20
—
MHz
G
F
Φ
Delay
ΔΦ
ΔG
ΔP1dB
—
—
—
—
—
—
0.292
82.71
7.19
22.38
0.01387
0.409
—
—
—
—
—
—
dB
°
ns
°
dB/°C
dBm/°C
MRF7S16150HR3 MRF7S16150HSR3
RF Device Data
Freescale Semiconductor
3
B1
V
BIAS
+
R1
C1
R2
C2
C3
Z8
Z5
RF
INPUT
Z6
Z7
Z9
Z10
C10
Z11
+
C5
C6
+
C7
C8
+
C9
V
SUPPLY
RF
OUTPUT
Z1
C4
Z2
Z3
Z4
DUT
Z1, Z5, Z11
Z2
Z3
Z4
Z6
0.744″ x 0.084″ Microstrip
0.822″ x 0.084″ Microstrip
0.252″ x 1.240″ Microstrip
0.402″ x 1.240″ Microstrip
0.111″ x 1.330″ Microstrip
Z7
Z8
Z9
Z10
PCB
0.619″ x 1.330″ Microstrip
0.284″ x 0.190″ Microstrip
0.220″ x 0.250″ Microstrip
0.531″ x 0.084″ Microstrip
Arlon CuClad 250GX - 0300- 55- 22, 0.030″,
ε
r
= 2.55
Figure 1. MRF7S16150HR3(HSR3) Test Circuit Schematic
Table 5. MRF7S16150HR3(HSR3) Test Circuit Component Designations and Values
Part
B1
C1
C2, C8
C3, C5
C4, C10
C6, C7
C9
R1
R2
Description
Small Ferrite Bead
10
μF,
35 V Electrolytic Capacitor
0.01
μF,
50 V Chip Capacitors
10 pF Chip Capacitors
47 pF Chip Capacitors
22
μF,
35 V Tantalum Capacitors
220
μF,
50 V Electrolytic Capacitor
1 KΩ, 1/4 W Chip Resistor
10
Ω,
1/4 W Chip Resistor
Part Number
2743019447
EMVY350ADA100ME55G
C1825C103J5RAC
ATC100B100BT500XT
ATC100B470BT500XT
T491X226K035AT
EMVY500ADA221MJ0G
CRCW12061001FKEA
CRCW120610R1FKEA
Manufacturer
Fair Rite
Nippon Chemi - Con
Kemit
ATC
ATC
Kemet
Nippon Chemi - Con
Vishay
Vishay
MRF7S16150HR3 MRF7S16150HSR3
4
RF Device Data
Freescale Semiconductor
R1
B1 R2
C3
C5
C6
C8
C7
C2
C1
CUT OUT AREA
C10
C9
C4
Figure 2. MRF7S16150HR3(HSR3) Test Circuit Component Layout
MRF7S16150HR3 MRF7S16150HSR3
RF Device Data
Freescale Semiconductor
5
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