Bipolar Transistors - Pre-Biased 200MW 47K 22K
| 参数名称 | 属性值 |
| 是否无铅 | 不含铅 |
| 是否Rohs认证 | 符合 |
| 厂商名称 | Diodes Incorporated |
| 包装说明 | SMALL OUTLINE, R-PDSO-G3 |
| 针数 | 3 |
| Reach Compliance Code | compliant |
| ECCN代码 | EAR99 |
| Factory Lead Time | 19 weeks |
| 其他特性 | BUILT-IN BIAS RESISTOR RATIO 0.47 |
| 最大集电极电流 (IC) | 0.03 A |
| 集电极-发射极最大电压 | 50 V |
| 配置 | SINGLE WITH BUILT-IN RESISTOR |
| 最小直流电流增益 (hFE) | 56 |
| JESD-30 代码 | R-PDSO-G3 |
| JESD-609代码 | e3 |
| 湿度敏感等级 | 1 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 最高工作温度 | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | 260 |
| 极性/信道类型 | PNP |
| 最大功率耗散 (Abs) | 0.2 W |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子面层 | Matte Tin (Sn) |
| 端子形式 | GULL WING |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | 40 |
| 晶体管元件材料 | SILICON |
| 标称过渡频率 (fT) | 250 MHz |
| DDTA144WCA-7-F | DDTA123JCA-7-F | DDTA143XCA-7-F | DDTA144VCA-7-F | DDTA124XCA-7-F | DDTA114YCA-7-F | DDTA143ZCA-7-F | |
|---|---|---|---|---|---|---|---|
| 描述 | Bipolar Transistors - Pre-Biased 200MW 47K 22K | Bipolar Transistors - Pre-Biased 200MW 2.2K 47K | Bipolar Transistors - Pre-Biased PRE-BIAS PNP 200mW | Bipolar Transistors - Pre-Biased 200MW 47K | Bipolar Transistors - Pre-Biased 200MW 22K 47K | Bipolar Transistors - Pre-Biased PRE-BIAS PNP 200mW | Bipolar Transistors - Pre-Biased PRE-BIAS PNP 200mW |
| 是否无铅 | 不含铅 | 不含铅 | 不含铅 | 不含铅 | 不含铅 | 不含铅 | 不含铅 |
| 是否Rohs认证 | 符合 | 符合 | 符合 | 符合 | 符合 | 符合 | 符合 |
| 厂商名称 | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| 包装说明 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | ROHS COMPLIANT, PLASTIC PACKAGE-3 | SMALL OUTLINE, R-PDSO-G3 |
| 针数 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
| Reach Compliance Code | compliant | compliant | compliant | compliant | compliant | compliant | compliant |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| Factory Lead Time | 19 weeks | 19 weeks | 19 weeks | 19 weeks | 19 weeks | 19 weeks | 19 weeks |
| 其他特性 | BUILT-IN BIAS RESISTOR RATIO 0.47 | BUILT-IN BIAS RESISTOR RATIO 21.36 | BUILT-IN BIAS RESISTOR RATIO 2.13 | BUILT-IN BIAS RESISTOR RATIO 0.21 | BUILT-IN BIAS RESISTOR RATIO 2.14 | BUILT-IN BIAS RESISTOR RATIO 4.7 | BUILT-IN BIAS RESISTOR RATIO 10 |
| 最大集电极电流 (IC) | 0.03 A | 0.1 A | 0.1 A | 0.03 A | 0.05 A | 0.07 A | 0.1 A |
| 集电极-发射极最大电压 | 50 V | 50 V | 50 V | 50 V | 50 V | 50 V | 50 V |
| 配置 | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR |
| 最小直流电流增益 (hFE) | 56 | 80 | 30 | 33 | 68 | 68 | 80 |
| JESD-30 代码 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 |
| JESD-609代码 | e3 | e3 | e3 | e3 | e3 | e3 | e3 |
| 湿度敏感等级 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 元件数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
| 最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | 260 | 260 | 260 | 260 | 260 | 260 | 260 |
| 极性/信道类型 | PNP | PNP | PNP | PNP | PNP | PNP | PNP |
| 最大功率耗散 (Abs) | 0.2 W | 0.2 W | 0.2 W | 0.2 W | 0.2 W | 0.2 W | 0.2 W |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | YES | YES | YES | YES | YES | YES | YES |
| 端子面层 | Matte Tin (Sn) | Matte Tin (Sn) | Matte Tin (Sn) | Matte Tin (Sn) | Matte Tin (Sn) | Matte Tin (Sn) | Matte Tin (Sn) |
| 端子形式 | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| 处于峰值回流温度下的最长时间 | 40 | 40 | 40 | 40 | 40 | 40 | 40 |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| 标称过渡频率 (fT) | 250 MHz | 250 MHz | 250 MHz | 250 MHz | 250 MHz | 250 MHz | 250 MHz |
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