NTD4909N
Power MOSFET
30 V, 41 A, Single N−Channel, DPAK/IPAK
Features
•
•
•
•
Low R
DS(on)
to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These are Pb−Free Devices
V
(BR)DSS
30 V
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R
DS(on)
MAX
8.0 mW @ 10 V
12 mW @ 4.5 V
D
I
D
MAX
41 A
Applications
•
CPU Power Delivery
•
DC−DC Converters
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (R
qJA
)
(Note 1)
Power Dissipation
(R
qJA
) (Note 1)
Continuous Drain
Current (R
qJA
)
(Note 2)
Power Dissipation
(R
qJA
) (Note 2)
Continuous Drain
Current (R
qJC
)
(Note 1)
Power Dissipation
(R
qJC
) (Note 1)
Pulsed Drain Current
t
p
=10ms
Current Limited by Package
T
A
= 25°C
T
A
= 100°C
T
A
= 25°C
T
A
= 25°C
Steady
State
T
A
= 100°C
T
A
= 25°C
T
C
= 25°C
T
C
= 100°C
T
C
= 25°C
T
A
= 25°C
T
A
= 25°C
P
D
I
DM
I
DmaxPkg
T
J
, T
stg
I
S
dV/dt
E
AS
P
D
I
D
P
D
I
D
Symbol
V
DSS
V
GS
I
D
Value
30
"20
12.1
8.6
2.6
8.8
6.2
1.37
41
29
29.4
167
60
−55 to
175
27
7.0
28
W
A
A
°C
A
V/ns
mJ
W
A
W
Unit
V
V
A
N−Channel
G
S
4
4
A
1 2
3
4
1
2 3
1
2
3
CASE 369AA
DPAK
(Bent Lead)
STYLE 2
CASE 369AD
CASE 369D
IPAK
IPAK
(Straight Lead) (Straight Lead
DPAK)
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
AYWW
49
09NG
4
Drain
AYWW
49
09NG
4
Drain
Operating Junction and Storage Temperature
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse Drain−to−Source Avalanche
Energy (T
J
= 25°C, V
DD
= 50 V, V
GS
= 10 V,
L = 0.1 mH, I
L(pk)
= 24 A, R
G
= 25
W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
2
1 2 3
Drain 3
1
Gate Drain Source
Gate Source
1 2 3
Gate Drain Source
A
Y
WW
4909N
G
= Assembly Location
= Year
= Work Week
= Device Code
= Pb−Free Package
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 in sq pad size, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
©
Semiconductor Components Industries, LLC, 2014
1
May, 2014 − Rev. 3
Publication Order Number:
NTD4909N/D
AYWW
49
09NG
NTD4909N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case (Drain)
Junction−to−TAB (Drain)
Junction−to−Ambient − Steady State (Note 3)
Junction−to−Ambient − Steady State (Note 4)
3. Surface−mounted on FR4 board using 1 in sq pad size, 1 oz Cu.
4. Surface−mounted on FR4 board using the minimum recommended pad size.
Symbol
R
qJC
R
qJC−TAB
R
qJA
R
qJA
Value
5.1
4.3
58.2
110
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSS
/T
J
I
DSS
V
GS
= 0 V,
V
DS
= 24 V
T
J
= 25°C
T
J
= 125°C
V
GS
= 0 V, I
D
= 250
mA
30
15
1.0
10
"100
nA
V
mV/°C
mA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 5)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
I
GSS
V
DS
= 0 V, V
GS
=
"20
V
V
GS
= V
DS
, I
D
= 250
mA
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
1.0
1.7
4.0
2.2
V
mV/°C
V
GS
= 10 V
I
D
= 30 A
I
D
= 15 A
6.5
6.5
9.5
9.5
52
8.0
mW
V
GS
= 4.5 V
I
D
= 30 A
I
D
= 15 A
12
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
SWITCHING CHARACTERISTICS
(Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
gFS
V
DS
= 1.5 V, I
D
= 30 A
S
C
iss
C
oss
C
rss
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
Q
G(TOT)
V
GS
= 10 V, V
DS
= 15 V,
I
D
= 30 A
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 30 A
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= 15 V
1314
487
17.4
7.6
2.1
4.3
1.3
17.5
pF
nC
nC
t
d(on)
t
r
t
d(off)
t
f
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0
W
11
21
17
2.7
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2%.
6. Switching characteristics are independent of operating junction temperatures.
7. Assume terminal length of 110 mils.
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2
NTD4909N
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Parameter
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 30 A
T
J
= 25°C
T
J
= 125°C
0.9
0.8
30
V
GS
= 0 V, dIs/dt = 100 A/ms,
I
S
= 30 A
16
14
20
nC
ns
1.1
V
Symbol
t
d(on)
t
r
t
d(off)
t
f
V
GS
= 10 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0
W
Test Condition
Min
Typ
8.0
19
21
2.3
Max
Unit
ns
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Time
PACKAGE PARASITIC VALUES
Source Inductance (Note 7)
Drain Inductance, DPAK
Drain Inductance, IPAK (Note 7)
Gate Inductance (Note 7)
Gate Resistance
t
RR
ta
tb
Q
RR
L
S
L
D
L
D
L
G
R
G
T
A
= 25°C
2.99
0.0164
1.88
4.9
1.0
2.0
nH
W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2%.
6. Switching characteristics are independent of operating junction temperatures.
7. Assume terminal length of 110 mils.
ORDERING INFORMATION
Order Number
NTD4909NT4G
NTD4909N−1G
NTD4909N−35G
Package
DPAK
(Pb−Free)
IPAK
(Pb−Free)
IPAK Trimmed Lead
(Pb−Free)
Shipping
†
2500 / Tape & Reel
75 Units / Rail
75 Units / Rail
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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3
NTD4909N
TYPICAL CHARACTERISTICS
90
80
I
D
, DRAIN CURRENT (A)
70
60
50
40
30
20
10
0
0
1
2
3
10 V
7 V 4.5 V
4.2 V V
GS
= 4.0 V
T
J
= 25°C
I
D
, DRAIN CURRENT (A)
80
V
DS
= 10 V
60
3.8 V
3.6 V
3.4 V
3.2 V
3.0 V
2.8 V
2.6 V
2.4 V
4
40
T
J
= 25°C
20
T
J
= 125°C
T
J
= −55°C
2.0
2.5
3.0
3.5
4.0
4.5
0
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.020
0.018
0.016
0.014
0.012
0.010
0.008
0.006
0.004
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10
V
GS
(V)
I
D
= 30 A
T
J
= 25°C
0.014
0.013
0.012
0.011
0.010
0.009
0.008
0.007
0.006
0.005
0.004
15
25
Figure 2. Transfer Characteristics
T
J
= 25°C
V
GS
= 4.5 V
V
GS
= 10 V
35
45
55
65
75
85
95
I
D
, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. V
GS
10,000
R
DS(on)
, DRAIN−TO−SOURCE RES-
ISTANCE (NORMALIZED)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
−50 −25
10
0
25
50
75
100
125
150
175
I
D
= 30 A
V
GS
= 10 V
I
DSS
, LEAKAGE (nA)
1000
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
= 0 V
T
J
= 150°C
T
J
= 125°C
100
T
J
= 85°C
5
10
15
20
25
30
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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4
NTD4909N
TYPICAL CHARACTERISTICS
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
2000
V
GS
= 0 V
T
J
= 25°C
C, CAPACITANCE (pF)
1500
C
iss
15.0
13.5
12.0
10.5
9.0
7.5
6.0
4.5
3.0
1.5
0
0
2
4
6
8
10
12
Qgs
V
DD
= 15 V
V
GS
= 10 V
I
D
= 30 A
14
16
18
20
Qgd
T
J
= 25°C
QT
1000
500
C
oss
0
0
5
10
C
rss
15
20
25
30
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
1000
I
S
, SOURCE CURRENT (A)
V
DD
= 15 V
I
D
= 15 A
V
GS
= 10 V
t, TIME (ns)
100
30
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
V
GS
= 0 V
25
20
15
T
J
= 125°C
10
5
0
T
J
= 25°C
0
0.2
0.4
0.6
0.8
1.0
t
d(off)
t
f
t
r
10
t
d(on)
1
1
10
R
G
, GATE RESISTANCE (W)
100
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
E
AS
, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
1000
30
Figure 10. Diode Forward Voltage vs. Current
I
D
= 24 A
25
20
15
10
5
0
25
50
75
100
125
150
175
T
J
, STARTING JUNCTION TEMPERATURE (°C)
I
D
, DRAIN CURRENT (A)
100
10
ms
10
V
GS
= 10 V
Single Pulse
T
C
= 25°C
R
DS(on)
Limit
Thermal Limit
Package Limit
0.1
1
10
100
ms
1 ms
10 ms
dc
1
0.1
100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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