74LVC332
Triple 3-input OR gate
Rev. 1 — 20 March 2013
Product data sheet
1. General description
The 74LVC332 is a triple 3-input OR gate.
Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these
devices as translators in mixed 3.3 V and 5 V environments. Schmitt-trigger action at all
inputs makes the circuit tolerant of slower input rise and fall times.
2. Features and benefits
Wide supply voltage range from 1.2 V to 3.6 V
Inputs accept voltages up to 5.5 V
CMOS low power consumption
Direct interface with TTL levels
Complies with JEDEC standard:
JESD8-7A (1.65 V to 1.95 V)
JESD8-5A (2.3 V to 2.7 V)
JESD8-C/JESD36 (2.7 V to 3.6 V)
ESD protection:
HBM JESD22-A114F exceeds 2000 V
MM JESD22-A115-B exceeds 200 V
CDM JESD22-C101E exceeds 1000 V
Specified from
40 C
to +85
C
and
40 C
to +125
C
3. Ordering information
Table 1.
Ordering information
Package
Temperature range
74LVC332D
74LVC332DB
74LVC332PW
74LVC332BQ
40 C
to +125
C
40 C
to +125
C
40 C
to +125
C
40 C
to +125
C
Name
SO14
SSOP14
TSSOP14
Description
plastic small outline package; 14 leads;
body width 3.9 mm
plastic shrink small outline package; 14 leads;
body width 5.3 mm
plastic thin shrink small outline package; 14 leads;
body width 4.4 mm
Version
SOT108-1
SOT337-1
SOT402-1
SOT762-1
Type number
DHVQFN14 plastic dual in-line compatible thermal enhanced very
thin quad flat package; no leads; 14 terminals;
body 2.5
3
0.85 mm
NXP Semiconductors
74LVC332
Triple 3-input OR gate
4. Functional diagram
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Fig 1.
Logic symbol
Fig 2.
IEC logic symbol
Fig 3.
Logic diagram (one gate)
5. Pinning information
5.1 Pinning
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(1) This is not a supply pin. The substrate is attached to this
pad using conductive die attach material. There is no
electrical or mechanical requirement to solder this pad.
However, if it is soldered, the solder land should remain
floating or be connected to GND.
Fig 4.
Pin configuration for SO14 and (T)SSOP14
Fig 5.
Pin configuration for DHVQFN14
74LVC332
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 1 — 20 March 2013
2 of 14
NXP Semiconductors
74LVC332
Triple 3-input OR gate
5.2 Pin description
Table 2.
Symbol
1A, 2A, 3A
1B, 2B, 3B
1C, 2C, 3C
1Y, 2Y, 3Y
GND
V
CC
Pin description
Pin
1, 3, 9
2, 4, 10
13, 5, 11
12, 6, 8
7
14
Description
data input
data input
data input
data output
ground (0 V)
supply voltage
6. Functional description
Table 3.
Input
nA
L
X
X
H
[1]
Function selection
[1]
Output
nB
L
X
H
X
nC
L
H
X
X
nY
L
H
H
H
H = HIGH voltage level; L = LOW voltage level; X = don’t care
7. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
V
CC
I
IK
V
I
I
OK
V
O
I
O
I
CC
I
GND
T
stg
P
tot
[1]
[2]
[3]
Parameter
supply voltage
input clamping current
input voltage
output clamping current
output voltage
output current
supply current
ground current
storage temperature
total power dissipation
Conditions
V
I
< 0
[1]
Min
0.5
50
0.5
-
[2]
Max
+6.5
-
+5.5
50
V
CC
+ 0.5
50
100
-
+150
500
Unit
V
mA
V
mA
V
mA
mA
mA
C
mW
V
O
> V
CC
or V
O
< 0
V
O
= 0 V to V
CC
0.5
-
-
100
60
T
amb
=
40 C
to +85
C
[3]
-
The minimum input voltage ratings may be exceeded if the input current ratings are observed.
The output voltage ratings may be exceeded if the output current ratings are observed.
For SO14 packages: above 70
C
the value of P
tot
derates linearly with 8 mW/K.
For (T)SSOP14 packages: above 60
C
the value of P
tot
derates linearly with 5.5 mW/K.
For DHVQFN14 packages: above 60
C
the value of P
tot
derates linearly with 4.5 mW/K.
74LVC332
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 1 — 20 March 2013
3 of 14
NXP Semiconductors
74LVC332
Triple 3-input OR gate
8. Recommended operating conditions
Table 5.
Symbol
V
CC
V
I
V
O
T
amb
t/V
Recommended operating conditions
Parameter
supply voltage
functional
input voltage
output voltage
ambient temperature
input transition rise and fall
rate
in free air
V
CC
= 1.65 V to 2.7 V
V
CC
= 2.7 V to 3.6 V
Conditions
Min
1.65
1.2
0
0
40
0
0
Typ
-
-
-
-
-
-
-
Max
3.6
-
5.5
V
CC
+85
20
10
Unit
V
V
V
V
C
ns/V
ns/V
9. Static characteristics
Table 6.
Static characteristics
At recommended operating conditions. Voltages are referenced to GND (ground = 0 V).
Symbol Parameter
V
IH
HIGH-level
input voltage
Conditions
V
CC
= 1.2 V
V
CC
= 1.65 V to 1.95 V
V
CC
= 2.3 V to 2.7 V
V
CC
= 2.7 V to 3.6 V
V
IL
LOW-level
input voltage
V
CC
= 1.2 V
V
CC
= 1.65 V to 1.95 V
V
CC
= 2.3 V to 2.7 V
V
CC
= 2.7 V to 3.6 V
V
OH
HIGH-level
output
voltage
V
I
= V
IH
or V
IL
I
O
=
100 A;
V
CC
= 1.65 V to 3.6 V
I
O
=
4
mA; V
CC
= 1.65 V
I
O
=
8
mA; V
CC
= 2.3 V
I
O
=
12
mA; V
CC
= 2.7 V
I
O
=
18
mA; V
CC
= 3.0 V
I
O
=
24
mA; V
CC
= 3.0 V
V
OL
LOW-level
output
voltage
V
I
= V
IH
or V
IL
I
O
= 100
A;
V
CC
= 1.65 V to 3.6 V
I
O
= 4 mA; V
CC
= 1.65 V
I
O
= 8 mA; V
CC
= 2.3 V
I
O
= 12 mA; V
CC
= 2.7 V
I
O
= 24 mA; V
CC
= 3.0 V
I
I
input leakage V
CC
= 3.6 V; V
I
= 5.5 V or GND
current
-
-
-
-
-
-
-
-
-
-
-
0.1
0.2
0.45
0.6
0.4
0.55
5
-
-
-
-
-
-
0.3
0.65
0.8
0.6
0.8
20
V
V
V
V
V
A
V
CC
0.2
1.2
1.8
2.2
2.4
2.2
-
-
-
-
-
-
-
-
-
-
-
-
V
CC
0.3
1.05
1.65
2.05
2.25
2.0
-
-
-
-
-
-
V
V
V
V
V
V
40 C
to +85
C
Min
1.08
0.65
V
CC
1.7
2.0
-
-
-
-
Typ
[1]
-
-
-
-
-
-
-
-
Max
-
-
-
-
0.12
0.35
V
CC
0.7
0.8
40 C
to +125
C
Min
1.08
0.65
V
CC
1.7
2.0
-
-
-
-
Max
-
-
-
-
0.12
0.7
0.8
V
V
V
V
V
V
V
Unit
0.35
V
CC
V
74LVC332
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 1 — 20 March 2013
4 of 14
NXP Semiconductors
74LVC332
Triple 3-input OR gate
Table 6.
Static characteristics
…continued
At recommended operating conditions. Voltages are referenced to GND (ground = 0 V).
Symbol Parameter
I
CC
I
CC
supply
current
additional
supply
current
input
capacitance
Conditions
V
CC
= 3.6 V; V
I
= V
CC
or GND;
I
O
= 0 A
per input pin;
V
CC
= 2.7 V to 3.6 V;
V
I
= V
CC
0.6 V; I
O
= 0 A
V
CC
= 0 V to 3.6 V;
V
I
= GND to V
CC
-
-
40 C
to +85
C
Min
Typ
[1]
0.1
5
Max
10
500
40 C
to +125
C
Min
-
-
Max
40
5000
A
A
Unit
C
I
-
5.0
-
-
-
pF
[1]
All typical values are measured at V
CC
= 3.3 V (unless stated otherwise) and T
amb
= 25
C.
10. Dynamic characteristics
Table 7.
Dynamic characteristics
Voltages are referenced to GND (ground = 0 V). For test circuit see
Figure 7.
Symbol Parameter
t
pd
propagation delay
Conditions
nA, nB, nC to nY; see
Figure 6
V
CC
= 1.65 V to 1.95 V
V
CC
= 2.3 V to 2.7 V
V
CC
= 2.7 V
V
CC
= 3.0 V to 3.6 V
C
PD
power dissipation
capacitance
per gate; V
I
= GND to V
CC
V
CC
= 1.65 V to 1.95 V
V
CC
= 2.3 V to 2.7 V
V
CC
= 3.0 V to 3.6 V
[1]
[2]
[3]
[3]
[2]
40 C
to +85
C
Min
0.5
1.0
1.1
0.8
-
-
-
Typ
[1]
4.6
2.7
2.8
2.4
8.1
8.2
9.2
Max
11.6
6.6
7.0
5.9
-
-
-
40 C
to +125
C
Unit
Min
0.5
1.0
1.1
0.8
-
-
-
Max
13.4
7.6
8.1
6.8
-
-
-
ns
ns
ns
ns
pF
pF
pF
Typical values are measured at T
amb
= 25
C
and V
CC
= 1.2 V, 1.8 V, 2.5 V, 2.7 V, and 3.3 V respectively.
t
pd
is the same as t
PLH
and t
PHL
.
C
PD
is used to determine the dynamic power dissipation (P
D
in
W).
P
D
= C
PD
V
CC2
f
i
N +
(C
L
V
CC2
f
o
) where:
f
i
= input frequency in MHz; f
o
= output frequency in MHz
C
L
= output load capacitance in pF
V
CC
= supply voltage in Volts
N = number of inputs switching
(C
L
V
CC2
f
o
) = sum of the outputs
74LVC332
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 1 — 20 March 2013
5 of 14
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