IR MOSFET
StrongIRFET™
IRL60S216
IRL60SL216
Application
Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
HEXFET
®
Power MOSFET
D
V
DSS
R
DS(on)
typ.
max
I
D (Silicon Limited)
60V
1.6m
1.95m
298A
195A
G
S
I
D (Package Limited)
D
D
Benefits
Optimized for Logic Level Drive
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free*
RoHS Compliant, Halogen-Free
S
G
D
2
Pak
IRL60S216
G
S
D
TO-262
IRL60SL216
G
Gate
D
Drain
S
Source
Base part number
IRL60SL216
IRL60S216
Package Type
TO-262
D
2
-Pak
Standard Pack
Form
Quantity
Tube
50
Tape and Reel
800
Orderable Part Number
IRL60SL216
IRL60S216
)
RDS(on), Drain-to -Source On Resistance (m
6
ID = 100A
5
4
TJ = 125°C
3
2
1
0
2
4
6
8
10
12
14
16
18
20
TJ = 25°C
ID, Drain Current (A)
315
Limited By Package
270
225
180
135
90
45
0
25
50
75
100
125
150
175
TC , Case Temperature (°C)
VGS, Gate -to -Source Voltage (V)
Fig 1.
Typical On-Resistance vs. Gate Voltage
Fig 2.
Maximum Drain Current vs. Case Temperature
1
2016-1-19
Absolute Maximum Rating
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
T
J
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Wire Bond Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Operating Junction and
IRL60S/SL216
Max.
298
210
195
780
375
2.5
± 20
Units
A
W
W/°C
V
°C
-55 to + 175
Storage Temperature Range
T
STG
Soldering Temperature, for 10 seconds (1.6mm from case)
300
Avalanche Characteristics
E
AS (Thermally limited)
530
Single Pulse Avalanche Energy
1045
E
AS (Thermally limited)
Single Pulse Avalanche Energy
I
AR
Avalanche Current
See Fig 15, 16, 23a, 23b
Repetitive Avalanche Energy
E
AR
Thermal Resistance
Symbol
Parameter
Typ.
Max.
Junction-to-Case
R
JC
–––
0.4
Case-to-Sink, Flat Greased Surface
R
CS
0.50
–––
R
JA
Junction-to-Ambient
–––
62
mJ
A
mJ
Units
°C/W
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
V
GS(th)
I
DSS
I
GSS
R
G
Notes:
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Resistance
Min. Typ. Max.
60
––– –––
––– 0.040 –––
–––
1.6 1.95
–––
1.8
2.2
1.0 –––
2.4
––– –––
1.0
––– ––– 150
––– ––– 100
––– ––– -100
–––
2.0
–––
Units
Conditions
V
V
GS
= 0V, I
D
= 250µA
V/°C Reference to 25°C, I
D
= 2mA
V
GS
= 10V, I
D
= 100A
m
V
GS
= 4.5V, I
D
= 50A
V
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 60 V, V
GS
= 0V
µA
V
DS
= 60V,V
GS
= 0V,T
J
=125°C
V
GS
= 20V
nA
V
GS
= -20V
Calculated
continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A. Note that
Current
imitations arising from heating of the device leads may occur with some lead mounting arrangements.
(Refer
to AN-1140)
Repetitive
rating; pulse width limited by max. junction temperature.
Limited
by T
Jmax
, starting T
J
= 25°C, L = 0.107mH, R
G
= 50, I
AS
= 100A, V
GS
=10V.
I
SD
100A, di/dt
1100A/µs, V
DD
V
(BR)DSS
, T
J
175°C.
Pulse
width
400µs; duty cycle
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as C
oss
while VDS is rising from 0 to 80% V
DSS
.
R
is measured at T
J
approximately 90°C.
Limited by T
Jmax
, starting T
J
= 25°C, L = 1mH, R
G
= 50, I
AS
= 46A, V
GS
=10V.
Pulse drain current is limited to 780A by source bonding technology.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques
refer to application note #AN-994:
http://www.irf.com/technical-info/appnotes/an-994.pdf
2
2016-1-19
IRL60S/SL216
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
gfs
Q
g
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg– Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
229
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
170
53
80
90
70
180
190
120
15330
1260
890
1260
1640
Typ.
–––
–––
–––
9.5
52
54
87
97
2.9
Max. Units
Conditions
–––
S V
DS
= 10V, I
D
= 100A
255
I
D
= 100A
V
DS
= 30V
–––
nC
V
GS
= 4.5V
–––
–––
–––
V
DD
= 30V
–––
I
D
= 30A
ns
–––
R
G
= 2.7
V
GS
= 4.5V
–––
–––
–––
–––
–––
–––
Max. Units
298
A
780
1.2
–––
–––
–––
–––
–––
–––
V
V
GS
= 0V
V
DS
= 25V
pF
ƒ = 1.0MHz, See Fig.7
V
GS
= 0V, VDS = 0V to 48V
V
GS
= 0V, VDS = 0V to 48V
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
C
oss eff.(ER)
Effective Output Capacitance (Energy Related)
C
oss eff.(TR)
Output Capacitance (Time Related)
Diode Characteristics
Symbol
I
S
I
SM
V
SD
dv/dt
t
rr
Q
rr
I
RRM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Peak Diode Recovery dv/dt
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
D
S
T
J
= 25°C,I
S
=100A,V
GS
= 0V
T
J
= 25°C
V
DD
= 51V
V/ns T
J
= 175°C,I
S
= 100A,V
DS
= 60V
T
J
= 125°C
I
F
= 100A,
T
J
= 25°C di/dt = 100A/µs
nC
T
J
= 125°C
A T
J
= 25°C
ns
3
2016-1-19
1000
TOP
VGS
15V
10V
8.0V
6.0V
4.5V
4.0V
3.5V
3.25
IRL60S/SL216
1000
TOP
VGS
15V
10V
8.0V
6.0V
4.5V
4.0V
3.5V
3.25
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
BOTTOM
V
100
3.25V
BOTTOM
V
3.25V
100
60µs
PULSE WIDTH
Tj = 25°C
10
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
10
0.1
1
60µs
PULSE WIDTH
Tj = 175°C
10
100
VDS, Drain-to-Source Voltage (V)
Fig 3.
Typical Output Characteristics
1000
Fig 4.
Typical Output Characteristics
2.2
R DS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
ID = 100A
VGS = 10V
1.8
100
TJ = 175°C
10
TJ = 25°C
1.4
1
VDS = 25V
0.1
0
2
4
6
1.0
60µs
PULSE WIDTH
0.6
-60
-20
20
60
100
140
180
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)
Fig 5.
Typical Transfer Characteristics
1000000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Fig 6.
Normalized On-Resistance vs. Temperature
14
VGS, Gate-to-Source Voltage (V)
12
10
8
6
4
2
0
ID= 100A
VDS = 48V
VDS = 30V
VDS= 12V
100000
C, Capacitance (pF)
Ciss
10000
Coss
Crss
1000
100
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
0
50 100 150 200 250 300 350 400 450
QG, Total Gate Charge (nC)
Fig 7.
Typical Capacitance vs. Drain-to-Source Voltage
4
Fig 8.
Typical Gate Charge vs.
Gate-to-Source Voltage
2016-1-19
1000
IRL60S/SL216
TJ = 175°C
1000
OPERATION IN THIS AREA
LIMITED BY R DS (on)
100µsec
100
Limited by Package
ISD, Reverse Drain Current (A)
100
10
TJ = 25°C
ID, Drain-to-Source Current (A)
1msec
10
10msec
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
DC
1
VGS = 0V
0.1
0.0
0.5
1.0
1.5
2.0
2.5
VSD , Source-to-Drain Voltage (V)
1
0.1
10
100
VDS , Drain-toSource Voltage (V)
V(BR)DSS, Drain-to-Source Breakdown Voltage (V)
Fig 9.
Typical Source-Drain Diode Forward Voltage
74
Id = 2.0mA
72
70
68
66
64
62
60
-60
-20
20
60
100
140
180
TJ , Temperature ( °C )
Energy (µJ)
Fig 10.
Maximum Safe Operating Area
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-10
0
10
20
30
40
50
60
VDS, Drain-to-Source Voltage (V)
Fig 11.
Drain-to-Source Breakdown Voltage
m
RDS (on), Drain-to -Source On Resistance (
)
Fig 12.
Typical C
oss
Stored Energy
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0
50
100
150
200
ID, Drain Current (A)
VGS = 3.5V
VGS = 4.0V
VGS = 4.5V
VGS = 5.5V
VGS = 6.0V
VGS = 8.0V
VGS = 10V
Fig 13.
Typical On-Resistance vs. Drain Current
5
2016-1-19
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